 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| ON Semiconductor ) SWITCHMODETM NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18006 has an applications specific state-of-the-art die designed for use in 220 V line-operated SWITCHMODE Power supplies and electronic light ballasts. This high voltage/high speed transistor offers the following: MJE18006 * *ON Semiconductor Preferred Device POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 100 WATTS * Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain hFE Fast Switching No Coil Required in Base Circuit for Turn-Off (No Current Tail) Tight Parametric Distributions are Consistent Lot-to-Lot Standard TO-220 1 4 * * IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I I II I I I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII II I I IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I III I I II II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIII III IIIIIIIII IIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII I I I I III II IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII II I I II II I IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS Rating Symbol VCEO VCES VEBO IC ICM IB IBM PD MJE18006 450 9.0 6.0 15 4.0 8.0 Unit Vdc Vdc Vdc Adc Adc 2 3 Collector-Emitter Sustaining Voltage Emitter-Base Voltage Collector-Emitter Breakdown Voltage Collector Current -- Continuous -- Peak(1) Base Current -- Continuous -- Peak(1) Total Device Dissipation Derate above 25_C 1000 CASE 221A-09 TO-220AB (TC = 25C) 100 0.8 Watts W/_C _C Operating and Storage Temperature TJ, Tstg -65 to 150 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR THERMAL CHARACTERISTICS Rating Symbol RJC RJA TL MJE18006 1.25 62.5 260 Unit Thermal Resistance -- Junction to Case -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds _C/W _C ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise specified) Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) Collector Cutoff Current (VCE = 800 V, VEB = 0) VCEO(sus) ICEO ICES 450 -- -- -- -- -- -- -- -- -- -- -- -- Vdc 100 100 500 100 100 Adc Adc (TC = 125_C) (TC = 125_C) Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%. (2) Proper strike and creepage distance must be provided. IEBO Adc Preferred devices are ON Semiconductor recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2002 1 April, 2002 - Rev. 5 Publication Order Number: MJE18006/D II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I III I I I I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I I II I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I II I I I I II I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I III I I I I I I II I I II I I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I I I I II I I I I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I I I II I I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H) SWITCHING CHARACTERISTICS: Resistive Load (D.C. v 10%, Pulse Width = 20 s) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS ELECTRICAL CHARACTERISTICS -- continued (TC = 25_C unless otherwise specified) DC Current Gain (IC = 1.3 Adc, VCE = 1.0 Vdc) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) DC Current Gain (IC = 3.0 Adc, VCE = 1.0 Vdc) Base-Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc) Base-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc) Crossover Time Storage Time Fall Time Crossover Time Storage Time Fall Time Turn-Off Time Turn-On Time Turn-Off Time Turn-On Time Dynamic Saturation Voltage: Input Capacitance (VEB = 8.0 V) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) DC Current Gain (IC = 0.5 Adc, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc) 125_C) 125_C) (IC = 3.0 Adc, IB = 0.6 Adc) Determined 1 0 s and 1.0 3.0 s respectively after rising IB1 reaches 90% of final IB1 (see Figure 18) (IC = 1.3 Adc, IB1 = 0.13 Adc, IB2 = 0.65 Adc, VCC = 300 V) (IC = 1.5 Adc, IB1 = 0.13 Adc, IB2 = 0.65 Adc) (IC = 3.0 Adc, IB1 = 0.6 Adc, IB2 = 1.5 Adc, VCC = 300 V) (IC = 3.0 Adc, IB1 = 0.6 Adc, IB2 = 1.5 Adc) Characteristic (IC = 1.3 Adc IB1 = 130 mAdc VCC = 300 V) (IC = 3.0 Adc IB1 = 0.6 Adc 06 VCC = 300 V) 1.0 s 3.0 s 1.0 s 3.0 s (TC = 125_C) (TC = 25 to 125_C) http://onsemi.com MJE18006 (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125_C) (TC = (TC = 2 VCE(dsat) VCE(sat) VBE(sat) Symbol Cob hFE Cib ton ton toff toff tsi tsi fT tc tfi tfi tc Min 14 -- 6.0 5.0 11 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1000 9.5 14.5 2.15 2.75 0.25 0.27 0.35 0.4 0.83 0.94 Typ 85 120 90 100 220 230 100 120 200 130 1.5 1.9 1.2 1.5 1.7 2.1 2.0 7.5 3.0 7.0 5.5 12 -- 32 10 8.0 17 22 75 14 200 310 1500 0.6 0.65 0.7 0.8 Max 300 -- 150 -- 350 -- 180 -- 300 -- 180 -- 120 3.2 -- 2.5 -- 2.5 -- 2.5 -- 1.2 1.3 34 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Volts MHz Unit Vdc Vdc pF pF s s s s ns ns ns ns ns -- ns MJE18006 TYPICAL STATIC CHARACTERISTICS 100 TJ = 125C h FE , DC CURRENT GAIN TJ = 25C 10 TJ = - 20C VCE = 1 V h FE , DC CURRENT GAIN 100 TJ = 125C TJ = 25C 10 TJ = - 20C VCE = 5 V 1 0.01 0.1 1 10 1 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain @ 1 Volt 2 TJ = 25C V CE , VOLTAGE (VOLTS) V CE , VOLTAGE (VOLTS) 1.5 IC = 1 A 2A 3A 5A 6A 10 Figure 2. DC Current Gain @ 5 Volts 1 1 0.1 IC/IB = 10 0.5 IC/IB = 5 0 0.01 0.1 1 10 0.01 0.01 0.1 1 TJ = 25C TJ = 125C 10 IC COLLECTOR CURRENT (AMPS) IB, BASE CURRENT (AMPS) Figure 3. Collector Saturation Region Figure 4. Collector-Emitter Saturation Voltage 1.3 1.2 V BE , VOLTAGE (VOLTS) 1.1 10000 Cib TJ = 25C f = 1 MHz 1000 C, CAPACITANCE (pF) 1 0.9 0.8 0.7 TJ = 25C 0.6 0.5 TJ = 125C 0.1 1 0.4 0.01 IC/IB = 5 IC/IB = 10 10 IC, COLLECTOR CURRENT (AMPS) 100 Cob 10 1 1 10 100 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Base-Emitter Saturation Region Figure 6. Capacitance http://onsemi.com 3 MJE18006 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 2000 IB(off) = IC/2 VCC = 300 V PW = 20 s 4000 TJ = 125C 3500 3000 t, TIME (ns) 2500 2000 1500 1000 500 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 IC/IB = 10 IC/IB = 5 IB(off) = IC/2 VCC = 300 V PW = 20 s TJ = 25C TJ = 125C 1500 t, TIME (ns) 1000 IC/IB = 5 IC/IB = 10 TJ = 25C 500 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 7. Resistive Switching, ton 3500 3000 2500 t, TIME (ns) 2000 1500 1000 500 0 0 1 TJ = 25C TJ = 125C 2 3 IC/IB = 10 4 5 6 IC/IB = 5 5000 4500 4000 t si , STORAGE TIME (ns) 3500 3000 2500 2000 1500 1000 500 0 3 4 Figure 8. Resistive Switching, toff IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H TJ = 25C TJ = 125C IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H IC = 1.3 A IC = 3 A 5 6 7 8 9 10 11 12 13 14 15 hFE, FORCED GAIN IC COLLECTOR CURRENT (AMPS) Figure 9. Inductive Storage Time, tsi Figure 10. Inductive Storage Time, tsi(hFE) 350 300 250 t, TIME (ns) 200 150 100 50 0 0 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 1 2 3 4 IC, COLLECTOR CURRENT (AMPS) tfi tc t, TIME (ns) 250 tc 200 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 150 tfi 100 TJ = 25C TJ = 125C 5 6 TJ = 25C TJ = 125C 0 1 2 3 4 5 6 IC, COLLECTOR CURRENT (AMPS) 50 Figure 11. Inductive Switching, tc and tfi IC/IB = 5 http://onsemi.com 4 Figure 12. Inductive Switching, tc and tfi IC/IB = 10 MJE18006 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 180 160 t fi , FALL TIME (ns) 140 120 100 80 60 3 4 5 TJ = 25C TJ = 125C 6 7 8 9 10 11 12 13 14 15 hFE, FORCED GAIN IC = 1.3 A IC = 3 A IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H TC, CROSSOVER TIME (ns) 350 300 250 200 150 100 50 3 4 5 IC = 1.3 A TJ = 25C TJ = 125C 6 7 8 9 10 11 12 13 14 15 hFE, FORCED GAIN IC = 3 A IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H Figure 13. Inductive Fall Time Figure 14. Inductive Crossover Time http://onsemi.com 5 MJE18006 GUARANTEED SAFE OPERATING AREA INFORMATION 100 I C , COLLECTOR CURRENT (AMPS) DC (MJE18006) 5 ms 10 EXTENDED SOA 1 ms 10 s 1 s I C , COLLECTOR CURRENT (AMPS) 7 6 5 4 3 2 1 0 VBE(off) = 0 V 0 200 400 600 -1, 5 V 800 1000 -5V TC 125C IC/IB 4 LC = 500 H 1 0.1 0.01 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 15. Forward Bias Safe Operating Area Figure 16. Reverse Bias Switching Safe Operating Area 1,0 POWER DERATING FACTOR 0,8 0,6 0,4 THERMAL DERATING 0,2 0,0 20 SECOND BREAKDOWN DERATING 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (C) Figure 17. Forward Bias Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figure 20. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base-to-emitter junction reverse-biased. The safe level is specified as a reverse-biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. http://onsemi.com 6 MJE18006 5 4 3 2 VOLTS 1 0 -1 -2 -3 -4 -5 0 IB 1 2 90% IB 1 s 3 s 3 4 TIME 5 6 7 8 VCE dyn 1 s dyn 3 s 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 TIME 5 6 7 8 IB 90% IB1 VCLAMP 10% VCLAMP IC tsi tc 90% IC tfi 10% IC Figure 18. Dynamic Saturation Voltage Measurements +15 V 1 F 100 3W MTP8P10 Figure 19. Inductive Switching Measurements 150 3W 100 F VCE PEAK MTP8P10 RB1 Iout A VCE IB1 IB IB2 V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 VOLTS IC(pk) = 100 mA IC PEAK MPF930 +10 V MPF930 MUR105 50 COMMON 500 F 150 3W MJE210 MTP12N10 RB2 1 F -Voff INDUCTIVE SWITCHING L = 200 H RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 RBSOA L = 500 H RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 Table 1. Inductive Load Switching Drive Circuit TYPICAL THERMAL RESPONSE 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.05 0.02 SINGLE PULSE 0.01 0.01 0.1 1 t, TIME (ms) t2 DUTY CYCLE, D = t1/t2 10 t1 P(pk) RJC(t) = r(t) RJC RJC = 1.25C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 0.1 100 1000 Figure 20. Typical Thermal Response (ZJC(t)) for MJE18006 http://onsemi.com 7 MJE18006 PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 Q 123 A U K H Z L V G D N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR R J SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 MJE18006/D |
Price & Availability of MJE18006-D
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |