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2.5V Drive Nch+Nch MOSFET
US6K1
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
TUMT6
Features 1) Low On-resistance. 2) Space savingsmall surface mount package (TUMT6). 3) Low voltage drive (2.5V drive).
Applications Switching
Abbreviated symbol : K01
Packaging specifications
Package Type US6K1 Code Basic ordering unit (pieces) Taping TR 3000
Inner circuit
(6) (5) (4)
1 2
2 1
(1)
(2)
(3)
1 ESD PROTECTION DIODE 2 BODY DIODE
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of storage temperature
1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD Tch Tstg
2
Limits 30 12 1.5 6 0.6 6 1.0 0.7 150 -55 to +150
Unit V V A A A A W / TOTAL W / ELEMENT C C
Thermal resistance
Parameter Channel to ambient
Mounted on a ceramic board
Symbol Rth(ch-a)
Limits 125 179
Unit C/W / TOTAL C/W / ELEMENT
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0.2Max.
1/3
2009.03 - Rev.B
US6K1
Electrical characteristics (Ta=25C)
Parameter Symbol Min. - 30 - 0.5 - - - 1.5 - - - - - - - - - - Typ. - - - - 170 180 240 - 80 13 12 7 9 15 6 1.6 0.5 0.3 Max. 10 - 1 1.5 240 250 340 - - - - - - - - 2.2 - - IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Data Sheet
Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=12V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 1.5A, VGS= 4.5V ID= 1.5A, VGS= 4.0V ID= 1.5A, VGS= 2.5V VDS= 10V, ID= 1.5A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 0.75A VGS= 4.5V RL= 20 RG =10 VDD 15V VGS= 4.5V ID= 1.5A
RDS (on)
Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd

Body diode characteristics (Source-drain) (Ta=25C)
Parameter Forward voltage Symbol VSD Min. - Typ. - Max. 1.2 Unit V Conditions IS= 0.6A, VGS=0V
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2/3
2009.03 - Rev.B
US6K1
Electrical characteristics curves
Data Sheet
1000
GATE-SOURCE VOLTAGE : VGS (V)
DRAIN CURRENT : ID (A)
SWITCHING TIME : t (ns)
Ta=25C VDD=15V VGS=4.5V RG=10 Pulsed
tf
6
Ta=25C VDD=15V ID=1.5A 5 RG=10 Pulsed
10
VDS=10V Pulsed
1
Ta=125C 75C 25C -25C
100
td(off)
4
3
0.1
10
td(on)
2
0.01
tr
1 0 0.001 0.0
1 0.01
0.1
1
10
0
0.5
1
1.5
2
0.5
1.0
1.5
2.0
2.5
DRAIN CURRENT : ID (A)
TOTAL GATE CHARGE : Qg (nC)
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Switching Characteristics
Fig.2 Dynamic Input Characteristics
Fig.3 Typical Transfer Characteristics
1.0
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (m)
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 5 6 7
Ta=125C
1
75C 25C -25C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) ()
Ta=25C Pulsed
10
VGS=0V Pulsed
10
VGS=4.5V Pulsed
SOURCE CURRENT : IS (A)
1
Ta=125C 75C 25C -25C
0.1
8
9
10
0.01 0.0
0.5
1.0
1.5
0.1 0.01
0.1
1
10
GATE-SOURCE VOLTAGE : VGS (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
DRAIN CURRENT : ID (A)
Fig.4 Static Drain-Source On-State Resistance vs. Gate source Voltage
Fig.5 Source Current vs. Source-Drain Voltage
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current ( )
10
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) ()
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) ()
1
Ta=125C 75C 25C -25C
1
Ta=125C 75C 25C -25C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) ()
VGS=4.0V Pulsed
10
VGS=2.5V Pulsed
10
Ta=25C Pulsed
1
VGS=2.5V VGS=4V VGS=4.5V
0.1 0.01
0.1
1
10
0.1 0.01
0.1
1
10
0.1 0.01
0.1
1
10
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( )
Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( )
Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( )
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3/3
2009.03 - Rev.B
Appendix
Notes
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Appendix-Rev4.1

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