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| MCC Features * omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2SC3279 High DC Current Gain and excellent hFE Linearity hFE(1) =140-600 (V CE=1.0V, IC=0.5A) hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) NPN Silicon Epitaxial Transistors TO-92 A E Pin Configuration Bottom View E C B Maximum Ratings Symbol V CEO V CES V CBO V EBO IC IB PC TJ TSTG Symbol Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - DC Pulsed (1) Base Current Collector power dissipation Junction Temperature Storage Temperature Parameter Collector-Emitter Voltage (IC=10mAdc, IB =0) Collector-Emitter Voltage (IE =1.0mAdc, IC=0) Collector Cutoff Current (VCB=30Vdc,IE =0) Emitter Cutoff Current (VEB =6.0Vdc, IC=0) Min 10 6.0 ----Rating 10 30 30 6.0 2.0 5.0 0.2 750 -55 to +150 -55 to +150 Typ --------Max ----0.1 0.1 Unit V V V V A A W O C O C Units Vdc Vdc uAdc uAdc B C Electrical Characteristics @ 25OC Unless Otherwise Specified OFF CHARACTERISTICS V (BR)CEO V (BR)EBO ICBO IEBO D ON CHARACTERISTICS DC Current Gain (2) (IC=0.5Adc, VCE=1.0Vdc) 140 --600 hFE(2) DC Current Gain (IC=2.0Adc, VCE=1.0Vdc) 70 200 --V CE(sat) Collector Saturation Voltage (IC=2.0Adc, IB =50mAdc) --0.2 0.5 V BE Base Saturation Voltage (IC=2.0Adc, VCE=1.0Vdc) --0.86 1.5 fT Transition Frequency (VCE=1.0Vdc, IC=0.5Adc) --150 --Cob Collector Output Capacitance (VCB=10Vdc, IE =0, f=1.0MHz) --27 --(1) Pulse Width=10 ms (Max.), Duty Cycle=30% (Max.) (2) hFE(1) Classification L: 140-240, M: 200-330, N: 300-450, P: 420-600 hFE(1) --- G DIMENSIONS --Vdc Vdc MHz pF DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE www.mccsemi.com 2SC3279 MCC www.mccsemi.com |
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