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| ni.teehSataD.www WFF5N60 Silicon N-Channel MOSFET Features 4.5A,600V,RDS(on)(Max 2.2)@VGS=10V Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150) General Description This Power MOSFET is produced using Winsemi's advanced Planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100) IDM VGS EAS EAR dv/dt PD Derating Factor above 25 TJ, Tstg TL Junction and Storage Temperature 0.26 -55~150 300 W/ Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25) (Note 2) (Note 1) (Note 3) (Note1) 3.1* 16* 30 240 10 4.5 33 A A V mJ mJ V/ns W Drain Source Voltage Continuous Drain Current(@Tc=25) Parameter Value 600 4.5* Units V A Channel Temperature *Drain current limited by junction temperature Thermal Characteristics Symbol RQJC RQJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Value Min - Typ - Max 3.79 62.5 Units /W /W 1/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved ni.teehSataD.www WFF5N60 Electrical Characteristics (Tc = 25 C) 25C) Characteristics Gate leakage current Gate-source breakdown voltage Symbol IGSS V(BR)GSS Test Condition VGS = 30 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 600 V, VDS = 0 V Min 30 600 2 - Type 1.8 545 70 8 10 35 45 20 Max 100 10 100 4 2.5 670 90 11 30 80 Unit nA V A A V V Drain cut-off current IDSS VDS = 480 V, Tc = 125 Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source V(BR)DSS VGS(th) RDS(ON) Ciss Crss Coss tr ton tf toff ID = 250 A, VGS = 0 V VDS = 10 V, ID =250 A VGS = 10 V, ID = 2.2A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD =300 V, ID =4.4 A RG=25 (Note4,5) VDD = 480 V, pF ns 100 50 - Qg plus gate-drain) Gate-source charge Gate-drain ("miller") Charge Qgs Qgd VGS = 10 V, ID = 4.4 A (Note4,5) - 16 20 nC - 3.4 7 - Source-Drain Ratings and Characteristics (Ta = 25 C) Source- 25C) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF Trr Qrr Test Condition IDR = 4.4 A, VGS = 0 V IDR = 4.4 A, VGS = 0 V, dIDR / dt = 100 A / s Min - Type 390 2.2 Max 4.5 17.6 1.4 - Unit A A V ns C Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=18.5mH,IAS=4.4A,VDD=50V,RG=0,Starting TJ=25 3.ISD4.5A,di/dt200A/us, VDD ni.teehSataD.www WFF5N60 3/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved ni.teehSataD.www WFF5N60 4/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved ni.teehSataD.www WFF5N60 Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved ni.teehSataD.www WFF5N60 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved ni.teehSataD.www WFF5N60 TO-220F Package Dimension Unit:mm 7/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved |
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