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| VISHAY BYV12 to BYV16 Vishay Semiconductors Fast Avalanche Sinterglass Diode \ Features * * * * Glass passivated junction Hermetically sealed package Soft recovery characteristic Low reverse current Applications Fast rectification and switching diode for example for TV-line output circuits and switch mode power supply Mechanical Data Case: Sintered glass case, SOD 57 Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 370 mg, (max. 500 mg) 949539 Parts Table Part BYV12 BYV13 BYV14 BYV15 BYV16 Type differentiation VR = 100 V; IFAV = 1.5 A VR = 400 V; IFAV = 1.5 A VR = 600 V; IFAV = 1.5 A VR = 800 V; IFAV = 1.5 A VR = 1000 V; IFAV = 1.5 A SOD57 SOD57 SOD57 SOD57 SOD57 Package Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Test condition see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics Peak forward surge current Repetitive peak forward current Average forward current Junction and storage temperature range Non repetitive reverse avalanche energy I(BR)R = 0.4 A = 180 , Tamb = 25 C tp = 10 ms, half sinewave Sub type BYV12 BYV13 BYV14 BYV15 BYV16 Symbol VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM IFSM IFRM IFAV Value 100 400 600 800 1000 40 9 1.5 Unit V V V V V A A A C mJ Tj = Tstg - 55 to + 175 ER 10 Document Number 86039 Rev. 5, 07-Jan-03 www.vishay.com 1 BYV12 to BYV16 Vishay Semiconductors Maximum Thermal Resistance Tamb = 25 C, unless otherwise specified Parameter Junction ambient Test condition l = 10 mm, TL = constant on PC board with spacing 25 mm Sub type Symbol RthJA RthJA Value 45 100 VISHAY Unit K/W K/W Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse current Reverse recovery time Reverse recovery charge IF = 1 A VR = VRRM VR = VRRM, Tj = 150 C IF = 0.5 A, IR = 1 A, iR = 0.25 A IF = 1 A, di/dt = 5 A/s Test condition Sub type Symbol VF IR IR trr Qrr 1 60 Min Typ. Max 1.5 5 150 300 200 Unit V A A ns nC Typical Characteristics (Tamb = 25 C unless otherwise specified) R thJA - Therm. Resist. Junction / Ambient ( K/W ) 120 l 100 I F - Forward Current ( A) l 10.000 80 60 40 20 0 0 5 10 15 20 25 30 l - Lead Length ( mm ) TL=constant 1.000 Tj=175C 0.100 Tj=25C 0.010 0.001 0.0 16375 0.5 1.0 1.5 2.0 2.5 3.0 94 9101 VF - Forward Voltage ( V ) Figure 1. Typ. Thermal Resistance vs. Lead Length Figure 3. Forward Current vs. Forward Voltage 240 T j - Junction Temperature ( C ) RthJA=100K/W I FAV - Average Forward Current ( A ) 200 VRRM 160 BYV12 120 BYV14 80 BYV13 40 0 BYV15 BYV16 VR 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 16376 VR=VRRM half sinewave RthJA=45K/W l=10mm RthJA=100K/W PCB: d=25mm 94 9517 1000 0 200 400 600 800 VR,VRRM - Reverse / Repetitive Peak Reverse Voltage ( V ) 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature ( C ) Figure 2. Junction Temperature vs. Reverse/Repetitive Peak Reverse Voltage Figure 4. Max. Average Forward Current vs. Ambient Temperature www.vishay.com 2 Document Number 86039 Rev. 5, 07-Jan-03 VISHAY BYV12 to BYV16 Vishay Semiconductors 1000 VR = VRRM CD - Diode Capacitance ( pF ) IR - Reverse Current ( mA ) 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 Tj - Junction Temperature ( C ) 175 16379 f=1MHz 100 10 1 16377 0.1 1.0 10.0 VR - Reverse Voltage ( V ) 100.0 Figure 5. Reverse Current vs. Junction Temperature Figure 7. Diode Capacitance vs. Reverse Voltage 450 PR - Reverse Power Dissipation ( mW ) 400 350 300 250 200 150 100 50 0 25 50 75 100 PR-Limit @80%VR VR = VRRM PR-Limit @100%VR 125 150 175 16378 Tj - Junction Temperature ( C ) Figure 6. Max. Reverse Power Dissipation vs. Junction Temperature Zthp - Thermal Resistance for Pulse Cond. (K/W) 1000 VRRM=1000V RthJA=100K/W 100 Tamb=25C Tamb=45C 10 Tamb=60C Tamb=70C 1 10-5 Tamb=100C 10-4 10-3 10-2 10-1 100 101 tp - Pulse Length ( s ) 100 101 IFRM - Repetitive Peak Forward Current ( A ) 94 9522 Figure 8. Thermal Response Document Number 86039 Rev. 5, 07-Jan-03 www.vishay.com 3 BYV12 to BYV16 Vishay Semiconductors Package Dimensions in mm 3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5g Cathode Identification technical drawings according to DIN specifications 94 9538 VISHAY 0.82 max. 26 min. 4.2 max. 26 min. www.vishay.com 4 Document Number 86039 Rev. 5, 07-Jan-03 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to BYV12 to BYV16 Vishay Semiconductors 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 86039 Rev. 5, 07-Jan-03 www.vishay.com 5 |
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