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Rev 1; 5/04
LDMOS RF Power-Amplifier Bias Controller
General Description
The DS1870 is a dual-channel bias controller targeted toward class AB LDMOS RF power-amplifier applications. It uses lookup tables (LUTs) to control 256-position potentiometers based on the amplifier's temperature and drain voltage or current (or other external monitored signal). With its internal temperature sensor and multichannel A/D converter (ADC), the DS1870 provides a cost-effective solution that improves the amplifier's efficiency by using nonlinear compensation schemes that are not possible with conventional biasing solutions.
Features
Two-Channel Solution for Programmable RF Bias Control The Potentiometer's Position is Automatically Updated to Compensate for the Ambient Temperature and the Drain Voltage or Current A Five-Channel, 13-Bit ADC Continuously Monitors the Ambient Temperature, VCC, VD, ID1, and ID2 Hi/Lo Alarms for Each ADC Channel can Trigger a Fault Output Nonvolatile Memory for the Device Settings, Lookup Tables, and 32-Bytes of User Memory I2CTM-Compatible Serial Interface with Up to Eight Devices on the Same Serial Bus Single 5V Power Supply Small 16-Pin TSSOP Package -40C to +95C Operational Temperature Range
DS1870
Applications
Cellular Base Stations Medical Equipment Industrial Controls Optical Transceivers
Ordering Information
I2C is a trademark of Philips Corp. Purchase of I2C components of Maxim Integrated Products, Inc., or one of its sublicensed Associated Companies, conveys a license under the Philips I2C Patent Rights to use these components in an I2C system, provided that the system conforms to the I2C Standard Specification as defined by Philips.
PART DS1870E-010 TEMP RANGE -40C to +95C PIN-PACKAGE 16 TSSOP (173 mil)
Typical Operating Circuit appears at end of data sheet.
Pin Configuration
TOP VIEW 1 2 3 4 5 6 7 8 L1 W1 W2 L2 ID1 ID2 VD GND VCC HCOM SDA SCL 16 15 14 13 12 11 10 9
DS1870
A2 A1 A0 FAULT
TSSOP (173 mil) ______________________________________________ Maxim Integrated Products 1
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at 1-888-629-4642, or visit Maxim's website at www.maxim-ic.com.
LDMOS RF Power-Amplifier Bias Controller DS1870
ABSOLUTE MAXIMUM RATINGS
Voltage Range on VCC, HCOM, SDA, and SCL Pins Relative to Ground ...............................................................-0.5V to +6.0V Voltage Range on A0, A1, A2, FAULT, VD, ID1, ID2 Relative to Ground. ...................-0.5V to VCC + 0.5V, not to exceed +6.0V Voltage Range on L0, L1, W0, and W1 Relative to Ground .................-0.5V to HCOM + 0.5V, not to exceed +6.0V Operating Temperature Range ...........................-40C to +95C EEPROM Programming Temperature Range .........0C to +70C Storage Temperature Range .............................-55C to +125C Soldering Temperature .......................................See IPC/JEDEC J-STD-020A Specification
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
(TA = -40C to +95C)
PARAMETER Supply Voltage Input Logic 1 (SDA, SCL, A2, A1, A0) Input Logic 0 (SDA, SCL, A2, A1, A0) HCOM Voltage LX and WX Voltage Wiper Current SYMBOL VCC VIH VIL (Note 1) CONDITIONS MIN 4.5 0.7 x VCC -0.3 4.5 -0.3 -1 TYP MAX 5.5 VCC + 0.3 +0.3 x VCC 5.5 HCOM + 0.3 +1 UNITS V V V V V mA
DC ELECTRICAL CHARACTERISTICS
(VCC = +4.5 to 5.5V, TA = -40C to +95C.)
PARAMETER Supply Current Input Leakage Low-Level Output Voltage (SDA, FAULT) I/O Capacitance Digital Power-On Reset Analog Power-On Reset SYMBOL ICC ILI VOL1 VOL2 CI/O VPOD VPOA 1.0 2.0 3mA sink current 6mA sink current CONDITIONS (Note 2) -200 MIN TYP 1 MAX 2 +200 0.4 0.6 10 2.2 2.8 UNITS mA nA V V pF V V
2
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LDMOS RF Power-Amplifier Bias Controller
ANALOG VOLTAGE-MONITORING CHARACTERISTICS
(VCC = +4.5 to 5.5V, TA = -40C to +95C.)
PARAMETER VD Monitor FactoryCalibrated FS VCC Monitor FactoryCalibrated FS ID1 and ID2 Monitor FactoryCalibrated FS Resolution (VCC, VD, ID1, ID2) Accuracy (VCC, VD, ID1, ID2) Update Rate for VCC, VD, ID1, ID2 tframe SYMBOL Code FFF8h Code FFF8h Code FFF8h CONDITIONS MIN 2.488 6.521 0.4975 TYP 2.500 6.553 0.5000 0.0122 0.25 50 0.5 MAX 2.513 6.587 0.5025 UNITS V V V %FS %FS ms
DS1870
DIGITAL THERMOMETER CHARACTERISTICS
(VCC = +4.5 to 5.5V, TA = -40C to +95C.)
PARAMETER Thermometer Error Update Rate SYMBOL TERR tframe -40C to 95C CONDITIONS MIN -3 50 TYP MAX +3 UNITS C ms
ANALOG POTENTIOMETER CHARACTERISTICS
(VCC = +4.5 to 5.5V, TA = -40C to +95C.)
PARAMETER Wiper Resistance Potentiometer End-to-End Resistance Resolution Absolute Linearity Relative Linearity Ratiometric Temperature Coefficient End-to-End Temperature Coefficient -3dB Cutoff Frequency Series Resistors from L1, L2 to GND VHCOM/VLX RS (Note 5) +25C 15.1 0.5975 (Note 3) (Note 4) -1 -0.5 5 70 1 19.5 0.6 25.2 0.6025 SYMBOL +25C RPOT +25C 10.0 CONDITIONS MIN TYP 500 13 0.4 +1 +0.5 MAX 1000 16.8 UNITS k %FS LSB LSB ppm/C ppm/C MHz k
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LDMOS RF Power-Amplifier Bias Controller DS1870
LOOKUP TABLE CHARACTERISTICS
(VCC = +4.5 to 5.5V, TA = -40C to +95C.)
PARAMETER POT1 and POT2 Temp LUT Size POT1 and POT2 Temp LUT Index Range Temp Step Temp Hysteresis POT1 and POT2 Drain LUT Size POT1 and POT2 Drain LUT VD Index Range POT1 and POT2 Drain LUT VD Step POT1 and POT2 Drain LUT VD Hysteresis POT1 and POT2 Drain LUT IDX Index Range POT1 and POT2 Drain LUT IDX Step POT1 and POT2 Drain LUT IDX Hysteresis (Note 6) (Note 6) 0000 0200 0100 8000 0200 0100 7E00 (Note 6) -40 2 1 64 FE00 SYMBOL CONDITIONS MIN TYP 72 +102 MAX UNITS Bytes each C C C Bytes each Hex Hex Hex Hex Hex Hex
4
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LDMOS RF Power-Amplifier Bias Controller
AC ELECTRICAL CHARACTERISTICS
(VCC = +4.5V to 5.5V, TA = -40C to +95C, timing referenced to VIL(MAX) and VIH(MIN).) (Figure 3)
PARAMETER SCL Clock Frequency Bus Free Time Between Stop and Start Conditions Hold Time (Repeated) Start Condition Low Period of SCL High Period of SCL Data Hold Time Data Setup Time Start Setup Time SDA and SCL Rise Time SDA and SCL Fall Time Stop Setup Time SDA and SCL Capacitive Loading EEPROM Write Time SYMBOL fSCL tBUF tHD:STA tLOW tHIGH tHD:DAT tSU:DAT tSU:STA tR tF tSU:STO CB tW (Note 8) (Note 9) 10 (Note 8) (Note 8) CONDITIONS (Note 7) MIN 0 1.3 0.6 1.3 0.6 0 100 0.6 20 + 0.1CB 20 + 0.1CB 0.6 TYP MAX 400 UNITS kHz s s s s s ns s ns ns s 400 20 pF ms
DS1870
0.9
300 300
NONVOLATILE MEMORY CHARACTERISTICS
(VCC = +4.5V to 5.5V, TA = 0C to +70C.)
PARAMETER Writes SYMBOL +70C (Note 5) CONDITIONS MIN 50,000 TYP MAX UNITS
Note 1: Note 2: Note 3: Note 4: Note 5: Note 6: Note 7: Note 8: Note 9:
All voltages referenced to ground. Supply current is measured with all logic inputs at their inactive state (SDA = SCL = VCC) and driven to well-defined logic levels. All outputs are disconnected. Absolute linearity is the difference of measured value from expected value at the DAC position. Expected value is a straight line from measured minimum position to measured maximum position. Relative linearity is the deviation of an LSB DAC setting change vs. the expected LSB change. Expected LSB change is the slope of the straight line from measured minimum position to measured maximum position. This parameter is guaranteed by design. See Figure 1. I2C interface timing shown is for fast-mode (400kHz) operation. This device is also backward compatible with I2C standard-mode timing. CB--total capacitance of one bus line in picofarads. EEPROM write begins after a stop condition occurs.
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LDMOS RF Power-Amplifier Bias Controller DS1870
Typical Operating Characteristics
(VCC = +5.0V, TA = +25C, unless otherwise noted.)
SUPPLY CURRENT vs. SUPPLY VOLTAGE
DS1870 toc01
SUPPLY CURRENT vs. TEMPERATURE
850 800 SUPPLY CURRENT (mA) 750 700 650 600 550 500 450 400 VCC = 4.5V VCC = 5.0V VCC = 5.5V
DS1870 toc02
HCOM CURRENT vs. HCOM VOLTAGE
0.45 0.40 HCOM CURRENT (mA) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0
DS1870 toc03
800 780 760 SUPPLY CURRENT (mA) 740 720 700 680 660 640 620 600 4.5 4.7 4.9 5.1 5.3
900
0.50
5.5
-40
-20
0
20
40
60
80
100
4.5
4.7
4.9
5.1
5.3
5.5
SUPPLY VOLTAGE (V)
TEMPERATURE (C)
HCOM VOLTAGE (V)
POTENTIOMETER 1 AND 2 OUTPUT VOLTAGE vs. POSITON
DS1870 toc04
POTENTIOMETER 1 DIFFERENTIAL NONLINEARITY vs. WIPER POSITION
DS1870 toc05
POTENTIOMETER 2 DIFFERENTIAL NONLINEARITY vs. WIPER POSITION
0.20 0.15 0.10 0.05 0 -0.05 -0.10 -0.15 -0.20 -0.25
DS1870 toc06
6 5 WIPER VOLTAGE (V) 4 3 2 1 0 0 64 128 192 HCOM = 5V L1 AND L2 NOT CONNECTED
0.25 DIFFERENTIAL NONLINEARITY (LSB) 0.20 0.15 0.10 0.05 0 -0.05 -0.10 -0.15 -0.20 -0.25
0.25 DIFFERENTIAL NONLINEARITY (LSB)
256
0
64
128
192
256
0
64
128
192
256
WIPER POSITION (DEC)
WIPER POSITION (DEC)
WIPER POSITION (DEC)
POTENTIOMETER 1 INTEGRAL NONLINEARITY vs. WIPER POSITION
DS1870 toc07
POTENTIOMETER 2 INTEGRAL NONLINEARITY vs. WIPER POSITION
DS1870 toc08
POTENTIOMETER 1 AND 2 WIPER RESISTANCE vs. WIPER VOLTAGE
900 800 WIPER RESISTANCE () 700 600 500 400 300 200 100 0 HCOM = 5.0V 0 1 2 3 4 5
DS1870 toc09
0.5 0.4 INTEGRAL NONLINEARITY (LSB) 0.3 0.2 0.1 0 -0.1 -0.2 -0.3 -0.4 -0.5 0 64 128 192
0.5 0.4 INTEGRAL NONLINEARITY (LSB) 0.3 0.2 0.1 0 -0.1 -0.2 -0.3 -0.4 -0.5
1000
256
0
64
128
192
256
WIPER POSITION (DEC)
WIPER POSITION (DEC)
WIPER VOLTAGE (V)
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LDMOS RF Power-Amplifier Bias Controller DS1870
Typical Operating Characteristics (continued)
(VCC = +5.0V, TA = +25C, unless otherwise noted.)
POTENTIOMETER 1 AND 2 WIPER RESISTANCE vs. WIPER VOLTAGE
DS1870 toc09
POTENTIOMETER 1 AND 2 WIPER RESISTANCE vs. TEMPERATURE
DS1870 toc10
POTENTIOMETER END-TO-END RESISTANCE vs. TEMPERATURE
CHANGE FROM RESISTANCE AT 25C (PPM/C) 150 100 50 0 -50 -100 -150 -200 -40 -20 0 20 40 60 80 100 RPOT1 + RS1 RPOT2 + RS2
DS1870 toc11
1000 900 800 WIPER RESISTANCE () 700 600 500 400 300 200 100 0 0 1 2 3 4 5 WIPER VOLTAGE (V) HCOM = 5.0V
1000 RESISTANCE CHANGE FROM 25C (PPM/C) 900 800 700 600 500 400 300 200 100 0 -40 -20 0 20 40 60 80 HCOM = 5V WIPER VOLTAGE = 4V
200
100
TEMPERATURE (C)
TEMPERATURE (C)
POTENTIOMETER LOW TERMINAL VOLTAGE vs. TEMPERATURE
DS1870 toc12
VCC CONVERSION ERROR vs. SUPPLY VOLTAGE
DS1870 toc13
VD CONVERSION ERROR vs. INPUT VOLTAGE
0.4 0.3 0.2 ERROR (% FS) 0.1 0 -0.1 -0.2
DS1870 toc14
20 15 OUTPUT DRIFT (PPM/C) 10 5 L1 0 -5 -10 -15 -20 -40 -20 0 20 40 60 80 L2 HCOM = 5.0V
0.5 0.4 0.3 0.2 ERROR (% FS) 0.1 0 -0.1 -0.2 -0.3 -0.4 -0.5 DEFAULT VCC CALIBRATION
0.5
-0.3 -0.4 -0.5 5.5 0 0.5 1.0 1.5
DEFAULT VD CALIBRATION
100
3.0
3.5
4.0
4.5
5.0
2.0
2.5
TEMPERATURE (C)
SUPPLY VOLTAGE (V)
INPUT VOLTAGE (V)
ID1 CONVERSION ERROR vs. INPUT VOLTAGE
DS1870 toc15
ID2 CONVERSION ERROR vs. INPUT VOLTAGE
0.4 0.3 0.2 ERROR (% FS) 0.1 0 -0.1 -0.2 DEFAULT ID2 CALIBRATION
DS1870 toc16
0.5 0.4 0.3 0.2 ERROR (% FS) 0.1 0 -0.1 -0.2 -0.3 -0.4 -0.5 0 0.1 0.2 0.3 0.4 DEFAULT ID1 CALIBRATION
0.5
-0.3 -0.4 -0.5 0.5 0 0.1 0.2 0.3
0.4
0.5
INPUT VOLTAGE (V)
INPUT VOLTAGE (V)
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LDMOS RF Power-Amplifier Bias Controller DS1870
Pin Description
PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 NAME L1 W1 W2 L2 ID1 ID2 VD GND FAULT A0 A1 A2 SCL SDA HCOM VCC Potentiometer 1 Low Terminal Potentiometer 1 Wiper Terminal Potentiometer 2 Wiper Terminal Potentiometer 2 Low Terminal Drain Current 1 Monitor Input Drain Current 2 Monitor Input Drain Voltage Monitor Input Ground Fault Output. This open-collector output is active high when one of the enabled alarms is outside its programmable limit value. I2C Address Inputs. These inputs determine the slave address of the device. The slave address in binary is 1010A2A1A0. Serial Clock Input. I2C clock input. Serial Data Input/Output. Bidirectional I2C data pin. Potentiometer High Terminal. Common to potentiometers 1 and 2. Power Input FUNCTION
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LDMOS RF Power-Amplifier Bias Controller
Functional Diagram
DS1870
VCC VCC SDA SCL
I2C INTERFACE CONTROL
ON-CHIP TEMP SENSOR 32 BYTES USER MEMORY GAIN CALIBRATION REGISTERS OFFSET CALIBRATION REGISTERS + + 13-BIT ADC VCC
MUX
A0 A1 A2 I2C DATA BUS VD ID1 VD1 INDEX LOAD POT1 DRAIN LUT TABLE 4 (64 BYTES) TEMP INDEX LOAD POT1 TEMP LUT TABLE 2 (72 BYTES) POT2 TEMP LUT TABLE 3 (72 BYTES) VD ID2 ADDRESS GENERATION
VD ID1 ID2
VD2 INDEX POT2 DRAIN LUT TABLE 5 (64 BYTES)
MEASURED VALUES FOR TEMP, VCC, VD, ID0, ID1
LIMIT FLAG REGISTERS
FAULT HI AND LO LIMITS FOR TEMP, VCC, VD, ID1, ID2 LIMIT COMPARATOR FAULT MASK
INDEX HCOM
DS1870
+ + POT2 RPOT W2 L2 RS + RS POT1 RPOT W1 L1
GND
+
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LDMOS RF Power-Amplifier Bias Controller DS1870
Table 1. Voltage-Monitor Factory Default Calibration
SIGNAL VCC VD ID1 ID2 +FS SIGNAL 6.553V 2.5V 0.5V 0.5V +FS (hex) FFF8 FFF8 FFF8 FFF8 -FS SIGNAL 0V 0V 0V 0V -FS (hex) 0000 0000 0000 0000
Table 2. Voltage-Monitor Conversion Examples
SIGNAL VCC VCC VD VD ID1 ID2 LSB WEIGHT (V) 100.00 100.00 38.152 38.152 7.6303 7.6303 REGISTER VALUE (hex) 8080 C0F8 C000 8080 8000 1328 INPUT VOLTAGE (V) 3.29 4.94 1.875 1.255 0.2500 0.0374
Detailed Description
The DS1870 is a dual-channel LDMOS bias controller. It is intended to replace traditional bias control solutions that are limited by a constant temperature-coefficient correction. This IC offers lookup table correction that is programmable as a function of temperature as well as drain supply voltage or current. The flexibility to use a nonlinear bias correction improves efficiency significantly. This is a direct consequence of the ability to lower the bias current, particularly in class AB operation, since the bias correction no longer requires a constant temperature coefficient. In addition, correcting the bias as a function of drain supply voltage, or drain current in class AB, assists in distortion reduction and gain management. Two outputs (W1 and W2), each controlled by a dedicated two-dimensional lookup table as shown in the functional diagram, drive two LDMOS gates. The two degrees of freedom are temperature and either drain supply voltage or drain current. The lookup tables are programmed during power-amplifier assembly and test. After calibration, the IC automatically recalls the proper control setting for each output, based on temperature and drain characteristics. A 13-bit ADC samples and digitizes the chip temperature, VCC, the drain supply voltage, and two drain currents. These digitized signals are stored in memory ready to be accessed by the look up table controls. The digitized values are also compared to alarm thresholds generating high or low alarm flags. The FAULT output can be configured to assert high based any alarm's assertion, or the alarms can be masked to prevent unwanted fault assertions. The ADC readings as well as the alarm flags and fault status are accessible through the I2C-compatible interface.
The three least significant bits of the ADC result registers are masked to zero. The round-robin time is specified by tframe in the analog voltage-monitoring characteristics. The default factory-calibrated values for the voltage monitors are shown in Table 1. To calculate the voltage measured from the register value, first calculate the LSB weight of the 16-bit register that is equal to the full-scale voltage span divided by 65,528. Next, convert the hexadecimal register value to decimal and multiply it times the LSB weight. Example: Using the factory default VCC trim, what voltage is measured if the VCC register value is C347h? The LSB for VCC is equal to (6.553V - 0V) / 65,528 = 100.00V. C347h is equal to 49,991 decimal, which yields a supply voltage equal to 49,991 x 100.00V = 4.999V. Table 2 shows more conversion examples based on the factory trimmed ADC settings. By using the internal gain and offset calibration registers, the +FS and -FS signal values shown in Table 1 can be modified to meet customer needs. For more information on calibration, see the Voltage/Temperature Monitor Calibration section. Note: The method shown above for determining the input voltage level only works when the offset register is set to zero.
Voltage/Current Monitor Operation
The DS1870 monitors four voltages (VCC, VD, ID1, and ID2) plus the temperature in a round-robin fashion using its 13-bit ADC. The converted voltage values are stored in memory addresses 62h-69h as 16-bit unsigned numbers with the ADC result left justified in the register.
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LDMOS RF Power-Amplifier Bias Controller
Table 3. Internal Temperature-Monitor Factory Default Calibration
SIGNAL Temp +FS SIGNAL +127.97C +FS (hex) 7FF8 -FS SIGNAL -128.00C -FS (hex) 8000
Table 4. Temperature Conversion Values
MSB (bin) 01000000 01000000 01011111 11110110 11011000 LSB (bin) 00000000 00001111 00000000 00000000 00000000 TEMPERATURE (C) +64 +64.059 +95 -10 -40
DS1870
Temperature-Monitor Operation
The internal temperature monitor values are stored as 16-bit 2's complement numbers at memory addresses 60h to 61h. The round-robin update time (tframe) for the temperature register is the same as the voltage monitors. The factory default calibration values for the temperature monitor are shown in Table 3. To convert the 2's complement register value to the temperature it represents, first convert the 2-byte hexadecimal value to a decimal value as if it is an unsigned value, then divide the result by 256. Finally, subtract 256 if the result of the division is greater than or equal to +128. Table 4 shows example converted values. The offset of the temperature sensor can be adjusted using the internal calibration registers to account for differences between the ambient temperature at the location of the DS1870 and the temperature of the device it is biasing. When offsets are applied to the temperature measurement, the value converted will be off by a fixed value from the DS1870's ambient temperature. For more information, see the Temperature Monitor Offset Calibration section.
Table 5. LUT Addresses for Corresponding Temperature Values
LUT ADDRESS (hex) 80 81 82 ... C6 C7 CORRESPONDING TEMPERATURE (C) -40C -38C -36C ... +100C +102C
table 3) and the POT2 Drain LUT (memory table 5) control potentiometer 2. In the event that two table values are summed and the result is greater than 255 or less than 0, the potentiometer's position is set to 255 or 0, respectively.
Potentiometer Operation
Both of the DS1870's potentiometers are 256 positions with their high terminals connected to the high common pin, HCOM. The low terminals of the potentiometers are internally shunted to GND by resistors such that the output voltage is 3V to 5V when HCOM is connected to a 5V source. The internal shunt resistors and the potentiometer's end-to-end resistance feature matching temperature coefficients that prevent the output voltage from drifting over temperature. External resistors can be placed from HCOM to LX and/or from LX to GND to modify the typical output voltage.
Normal Operation
During normal operation, each potentiometer's position is automatically adjusted to the sum of its temperature and drain LUT values after each round of conversions. The potentiometer setting is applied after both the base and offset LUT values are recalled from memory. The sum of the currently indexed values in the POT1 Temp LUT (memory table 2) and the POT1 Drain LUT (memory table 4) control potentiometer 1. The sum of the currently indexed values in the POT2 Temp LUT (memory
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LDMOS RF Power-Amplifier Bias Controller DS1870
9Ah MEMORY LOCATION 99h 98h 97h 96h 95h INCREASING TEMPERATURE MEMORY LOCATION 99h 98h 97h 96h 95h INCREASING DRAIN VOLTAGE MEMORY LOCATION DECREASING TEMPERATURE 9Ah DECREASING DRAIN VOLTAGE 9Ah 99h 98h 97h 96h 95h INCREASING DRAIN CURRENT DECREASING DRAIN CURRENT
2
4 6 8 10 TEMPERATURE (C)
12
AA00 AC00 AEOO B000 B200 B400 DRAIN VOLTAGE CONVERSION (HEX)
2A00 2C00 2E00 3000 3200 3400 DRAIN CURRENT CONVERSION (HEX)
Figure 1. LUT Hysteresis
The temperature tables (LUT 2 and LUT 3) are 72 bytes each. This allows the biasing to be adjusted every 2C between -40C and +102C. Temperatures less than -40C or greater than 102C use the -40C or 102C values, respectively. The values in the temperature tables are 8-bit unsigned values (0 to 255 decimal) that allow the potentiometer to be set to any position as a function of the temperature. The temperature LUTs have 1C hysteresis (Figure 1) to prevent the potentiometer's position from chattering in the event the temperature remains near a LUT switching point. Table 5 shows how the DS1870 determines the temperature tables index as a function of temperature. The drain tables (LUT 4 and LUT5) are 64 bytes each, and they can be indexed either by the drain voltage or the drain current corresponding to the potentiometer. The VD1 control bit determines if the voltage sensed on VD or ID1 adjusts the POT1 Drain LUT, and the VD2 control bit determines if the voltage sensed on VD or ID2 controls the POT2 Drain LUT. The VD1 and VD2 control bits are located in register 85h of memory table 1. The drain tables are programmed with an 8-bit signed value (-128 to +127 decimal) that allow a relative offset from the temperature LUT values determined by the amplifier's drain characteristics.
The drain LUTs are indexed either by the upper half of the VD range or the lower half of its corresponding IDX range. Table 6 shows how the index is determined based on the V D or I DX values. Hysteresis equal to 0100h is also implemented on the drain monitor (Figure 1) to ensure that voltages close to a switching point do not cause the potentiometer position to chatter between two LUT values. The drain LUT index values are specified in hexadecimal because the hexadecimal values are applicable regardless of the gain and offset calibration of the DS1870.
Manual Mode
During normal operation, the potentiometer position is automatically modified once per conversion cycle based on the ADC results. The DS1870 can either stop the update function all together by using the B/O_en bit, or the temperature and drain LUT indexes can be manually controlled by using the Index_en bit. These bits are located in the Man DAC register located in memory table 1, byte AFh. More information about these bits is in the Register Description section.
Voltage-Monitor Calibration
The DS1870 can scale each analog voltage's gain and offset to produce the desired digital result. Each of the inputs (VCC VD, ID1, ID2) has a unique register for the gain and offset (in memory table 1) allowing them to be individually calibrated. Additionally, the DS1870 offers the ability to provide a temperature offset to allow the temperature measurement to be compensated to account for the difference in temperature between the DS1870 and the device it is biasing. To scale the gain and offset of the converter for a specific input, you must first know the relationship between the analog input and the expected digital result. The input that would produce a digital result of all zeros is the null value (normally this input is GND). The input that would produce a digital result of all ones (FFF8h) is
Table 6. LUT Addresses for VD or I DX Values
LUT ADDRESS (hex) 80 81 82 ... BE BF VD VALUE (hex) 8000 8200 8400 ... FC00 FE00 IDX VALUE (hex) 0000 0200 0400 ... 7C00 7E00
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LDMOS RF Power-Amplifier Bias Controller
the full-scale (FS) value. The expected FS value is also found by multiplying an all-ones digital answer by the LSB weight. Example: Since the FS digital reading is 65,528 (FFF8 hex) LSBs, if the LSB's weight is 50V, then the FS value is 65,528 x 50V = 3.2764V. A binary search is used to calibrate the gain of the converter. This requires forcing two known voltages to the input pin. It is preferred that one of the forced voltages is the null input and the other is 90% of FS. Since the LSB of the least significant bit in the digital reading register is known, the expected digital results can be calculated for both the null input and the 90% of full scale value. An explanation of the binary search used to scale the gain is best served with the following example pseudocode:
/* Assume that the null input is 0.5V */ /* Assume that the requirement for the LSB is 50V */ FS = 65528 * 50e-6; /*3.2764V */ CNT1 = 0.5 / 50e-6; /* 1000 */ CNT2 = 0.9 X FS / 50e-6; /* 58981.5 */ /* So the null input is 0.5V and 90% of FS is 2.949V */ Set the input's offset register to zero gain_result = 0h; /* Working register for gain calculation */ CLAMP = FFF8h; /* This is the max ADC value*/ For n = 15 down to 0 begin gain_result = gain_result + 2n; Write gain_result to the input's gain register; Force the 90% FS input (2.949V); Meas2= ADC result from DS1870; If Meas2 CLAMP Then gain_result = gain_result - 2n; Else Force the null input (0.5V) Meas1 = ADC result from DS1870 If [(Meas2-Meas1)>(CNT2-CNT1)] Then gain_result = gain_result - 2n; end; Write gain_result to the input's gain register;
requiring non-zero null values (e.g., 0.5V) must next calibrate the input's offset. If the desired null value is 0V, leave the offset register programmed to 0000h and skip this step. To calibrate the offset register, program the gain register with the gain_result value determined above. Next, force the null input voltage (0.5V for the example) and read the digital result from the part (Meas1). The offset value can be calculated using the following formula: Meas1 Offset = - 1 x 4
DS1870
Temperature-Monitor Offset Calibration
The DS1870's temperature sensor comes precalibrated and requires no further adjustment by the customer for proper operation. However, it is possible for customers to characterize their system and add a fixed offset to the DS1870's temperature reading so it is reflective of another location's temperature. This is not required for biasing because the temperature offset can be accounted for by adjusting the data's location in the LUTs, but this feature is available for customers who see application benefits. To change the temperature sensor's offset: write the temperature offset register to 0000h, measure the source reference temperature (Tref), and read the temperature from the DS1870 (TDS1870). Then, the following formula can be used to calculate the value for the temperature offset register.
TempOffset = 64 x ( -275 + Tref - TDS1870 ) XORbitwise BB40h
(
)
Once the value is calculated, write it to the temperature offset register.
Power-Up and Low-Voltage Operation
During power-up, the device is inactive until V CC exceeds the digital power-on-reset voltage (VPOD). At this voltage, the digital circuitry, which includes the I2Ccompatible interface, becomes functional. However, EEPROM-backed registers/settings cannot be internally read (recalled) until VCC exceeds the analog power-on reset (VPOA), at which time the remainder or the device becomes fully functional. Once VCC exceeds VPOA, the Rdyb bit in byte 74h is timed to go from a 1 to a 0 and indicates when ADC conversions begin. If VCC ever dips below VPOA, the Rdyb bit reads as a 1 again. Once a device exceeds V POA and the EEPROM is recalled, the values remain active (recalled) until V CC falls below VPOD.
13
The gain register is now set and the resolution of the conversion matches the expected LSB. Customers
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LDMOS RF Power-Amplifier Bias Controller DS1870
As the device powers up, the V CC LO alarm flag defaults to a 1 until the first V CC ADC conversion occurs and sets or clears the flag accordingly. The FAULT output is active when VCC < VPOA. power-up when they are first received by customers. The password should be programmed to a value other than FFFFh to ensure the calibration data is write protected. The PWE register always reads 0000h regardless of its programmed value.
Memory Description
The DS1870 memory map is divided into six sections that include the lower memory (addresses 00h to 7Fh) and five memory tables (Figure 2). The memory tables are addressed by setting the table-select byte (7Fh) to the desired table number and accessing the upper memory locations (80h to FFh). The lower memory can be addressed at any time regardless of the state of the table-select byte. The lower memory and memory table 1 are used to configure the DS1870 and read the status of the monitors. The lower memory also contains the 32 bytes of user memory. Memory tables 2 and 3 contain the base potentiometer positions that are used for biasing based on the reading of the internal temperature sensor. Memory tables 4 and 5 contain the relative offsets that are added to the base number as a function of either the drain voltage or the individual drain current monitors. See the Memory Map for a complete listing of registers and the Register Description section for details about each register.
EEPROM Write Disable
Memory locations 20h to 3Fh and Table 1 locations 80h to A7h are SRAM-shadowed EEPROM. By default (SEE = 0) these locations act as ordinary EEPROM. By setting SEE = 1, these locations begin to function like SRAM cells, which allow an infinite number of write cycles without concern of wearing out the EEPROM. This also eliminates the requirement for the EEPROM write time. Because changes made with SEE = 1 do not affect the EEPROM, these changes are not retained through power cycles. The power-up value is the last value written with SEE = 0. This function can be used to limit the number of EEPROM writes during calibration or to change the monitor thresholds periodically during normal operation without wearing out the EEPROM. The SEE bit resides in memory table 1, byte AFh.
Memory Map
The upper part of the memory map is organized into 8-byte or 4-word (2-byte) rows. The beginning address of the row is shown in the left-most column of the map, and is equal to the byte 0 or word 0 memory address. The next byte (Byte 1) is located at the next highest memory address, and the next word (Word 1) is two memory addresses greater than the row's beginning address. The lower part of the memory map expands the bytes or the words to show the names of the bits within the byte/word, or their bit weights (2X) for registers that contain numerical information. Numerical registers that contain an "S" in the most significant bit are showing sign extension for 2's complement numbers. Descriptions of each byte/bit follow in the Register Description section.
Password Memory Protection
The DS1870 contains a 2-byte password that allows all of its EE memory to be write protected until the proper password is entered into the password entry (PWE) word (address 78h). This allows factory calibration data for the bias settings, alarm thresholds, and all the other EEPROM information to be write protected. The password is set by writing to the Password register, which is the first two bytes of memory table 1. The factory default value for the password is FFFFh, which is also the factory default value for PWE on power-up. This means that parts are unlocked at
TABLE 1 80h 80h USER MEMORY; CONFIGURATION HI/LO ALARM THRESHOLDS; SEL ADC RESULTS; AFh C7h CONFIGURATION TABLE-SELECT BYTE (7Fh) 7Fh
00h
MAIN MEMORY TABLE 2 POT1 TEMP LUT SEL C7h 80h TABLE 3 POT2 TEMP LUT SEL BFh 80h TABLE 4 POT1 DRAIN LUT SEL 80h TABLE 5 POT2 DRAIN LUT SEL
BFh
Figure 2. Memory Organization 14 ____________________________________________________________________
LDMOS RF Power-Amplifier Bias Controller
LOWER MEMORY ROW (HEX) 00 08 10 18 20 28 30 38 40 48 50 58 60 68 70 78 BYTE (HEX) 00-1F 20 22 24 26 28 30 32 34 36 38 60 62 64 66 68 70 71 74 75 78 7F A2D Value0 A2D Value1 Status Table Select BYTE NAME User EE Temp Hi Alrm VCC Hi Alrm VD Hi Alrm ID1 Hi Alrm ID2 Hi Alrm Temp Lo Alrm VCC Lo Alrm VD Lo Alrm ID1 Lo Alrm ID2 Lo Alrm Temp Value VCC Value VD Value ID1 Value ID2 Value Hi Alarm Lo Alarm I/O Status A2D Status PWE Tbl Sel S 215 2 2
15
DS1870
ROW NAME User Row0 User Row1 User Row2 User Row3 Threshold0 Threshold1 Threshold2 Threshold3
WORD 0 BYTE 0 User EE User EE User EE User EE BYTE 1 User EE User EE User EE User EE
WORD 1 BYTE 2 User EE User EE User EE User EE BYTE 3 User EE User EE User EE User EE
WORD 2 BYTE 4 User EE User EE User EE User EE BYTE 5 User EE User EE User EE User EE
WORD 3 BYTE 6 User EE User EE User EE User EE BYTE 7 User EE User EE User EE User EE
Temp Hi Alarm ID2 Hi Alarm Temp Lo Alarm ID2 Lo Alarm Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
VCC Hi Alarm Reserved VCC Lo Alarm Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
VD Hi Alarm Reserved VD Lo Alarm Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
ID1 Hi Alarm Reserved ID1 Lo Alarm Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
Temp Value ID2 Value Hi Alarm Lo Alarm PWE BIT 7 EE 26 214 2 2
14
VCC Value Reserved Reserved Reserved Reserved Reserved BIT 4 EE 22 210 2 2
10
VD Value Reserved I/O Status Reserved BIT 3 BIT7 2-1 27 2 2 2
7
ID1 Value Reserved Reserved Reserved BIT 1 EE 2-4 24 2 2 2
4
A2D Status Reserved BIT 2 EE
Reserved Tbl Sel BIT 0 EE
EXPANDED BYTES BIT 6 EE 25 213 2 2
13
BIT 5 EE
BIT15 BIT14 BIT13 BIT12 BIT11 BIT10 BIT9 BIT8 24 212 2 2
12
BIT6 BIT5 BIT4 BIT3 BIT2 BIT1 BIT0 2-2 26 2 2 2
6
EE 20 28 2 2 2 2 2 2 2 2 2
8
23 211 2 2
11
21 29 2 2 2 2 2 2 2 2 2
9
2-3 25 2 2 2
5
2-5 23 2 2 2
3
2-6 22 2 2 2
2
2-7 21 2 2 2
1
2-8 20 20 20 20 2-8 20 20 20 20 2-8 20 20 20 20
215
15
214
14 6
213
13 5
212
12 4
211
11 3
210
10 2
29
9 1
28
8 0
27
7 -1
26
6 -2
25
5 -3
24
4 -4
23
3 -5
22
2 -6
21
1 -7
S 215 2 2
15 15
2 2 2
2 2 2
2 2 2
2 2 2
2 2 2
214
14 14
213
13 13
212
12 12
211
11 11
210
10 10
29
9 9
28
8 8
27 2 2 2
7 7
26 2 2 2
6 6
25 2 2 2
5 5
24 2 2 2
4 4
23 2 2 2
3 3
22 2 2 2
2 2
21 2 2 2
1 1
215 S 2 2 2
15
214 2 2 2 2
6 14
213 2 2 2 2
5 13
212 2 2 2 2
4 12
211 2 2 2 2
3 11
210 2 2 2 2
2 10
29
1 9
28
0 8
27
-1 7
26
-2 6
25
-3 5
24
-4 4
23
-5 3
22
-6 2
21
-7 1
2 2 2
2 2 2
2 2 2
2 2 2
2 2 2
2 2 2
2 2 2
215
15 15
214
14 14
213
13 13
212
12 12
211
11 11
210
10 10
29
9 9
28
8 8
27
7 7
26
6 6
25
5 5
24
4 4
23
3 3
22
2 2
21
1 1
Temp Hi Temp Lo Reserved Temp Rdy 215 2
7
VCC Hi VCC Lo Reserved VCC Rdy 213 2
6
VD Hi VD Lo Reserved VD Rdy 211 2
5
ID1 Hi ID1 Lo Reserved ID1 Rdy 29 2
4
ID2 Hi ID2 Lo Fault ID2 Rdy 27 2
3
Reserved Reserved Mint Reserved 25 2
2
Reserved Reserved Reserved Reserved 23 2
1
Reserved Reserved Rdyb Reserved 21 2
0
214
212
210
28
26
24
22
20
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LDMOS RF Power-Amplifier Bias Controller DS1870
TABLE 1 ( CONFIGURATION ) ROW (HEX) 80 88 90 98 A0 A8 ROW NAME Config Scale0 Scale1 Offset0 Offset1 LUT Index WORD 0 BYTE 0 BYTE 1 Password Reserved ID2 Scale Reserved ID2 Offset T Index O1 Index Vcc Scale Reserved Vcc Offset Reserved O2 Index POT1 base WORD 1 BYTE 2 BYTE 3 WORD 2 BYTE 4 BYTE 5 LUT Sel VD Scale Reserved VD Offset Reserved POT1 off POT2 base BIT 2
6
WORD 3 BYTE 6 Fault Ena BYTE 7 Reserved
ID1 Scale Reserved ID1 offset Temp Offset POT2 off Man Dac
EXPANDED BYTES BYTE (HEX) 80 85 86 8A 8C 8E 90 9A 9C 9E A0 A6 A8 A9 AA AB AC AD AE AF BYTE NAME Password LUT Sel Fault Ena Vcc VD Scale ID1 Scale ID2 Scale Vcc Offset VD Offset ID1 ID2 Temp Offset T Index O1 Index O2 Index POT1 base POT1 off POT2 base POT2 off Man DAC BIT 7 2
15
BIT 6
14
BIT 5
12
BIT 4
10
BIT 3
8
BIT 1 BIT3 2
3
BIT 0 BIT1 2
1
BIT15 BIT14 BIT13 BIT12 BIT11 BIT10 2 2
13
BIT9 BIT8 BIT7 BIT6 BIT5 BIT4 2
9
BIT2 2
2
BIT0 20
2
2
11
2
2
2
7
2
2
5
2
4
Reserved Temp Ena 215 2
15 15
Reserved Vcc Ena 213 2 2
13 13
Reserved VD Ena 211 2 2
11 11
Reserved ID1 Ena 29 2 2
9 9
Reserved ID2 Ena 27 2 2
7 7
Reserved Reserved 25 2 2
5 5
VD2 Reserved 23 2 2
3 3
VD1 Reserved 21 2 2
1 1
214 2 2
14 14
212 2 2
12 12
210 2 2
10 10
28 2 2
8 8
26 2 2
6 6
24 2 2
4 4
22 2 2
2 2
20 20 20 20 22 22 22 22 2-6 20 20 20 20 20 20 20
2
215 S S S S S 27 27 2
7
214 S S S S 28
213 215 215 2 2
15 15
212 214 214 2 2
14 14
211 213 213 2 2
13 13
210 212 212 2 2
12 12
29 211 211 2 2
11 11
28 210 210 2 2
10 10
27 29 29 2 2
9 9
26 28 28 2 2
8 8
25 27 27 2 2
7 7
24 26 26 2 2
6 6
23 25 25 2 2
5 5
22 24 24 2 2
4 4
21 23 23 2 2
3 3
27 26 26 2
6
26
25 25 25 2
5
24
23 24 24 2
4
22
21 23 23 2
3
20
2-1 22 22 2
2
2-2
2-3 21 21 2
1
2-4
2-5
27 S 27 S Reserved
26 26 26 26 Reserved
25 25 25 25 Reserved
24 24 24 24 Reserved
23 23 23 23 Reserved
22 22 22 22 SEE
21 21 21 21 B/O_en
index_en
16
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LDMOS RF Power-Amplifier Bias Controller DS1870
TABLE 2 (POT1 TEMP LUT) ROW (HEX) 80 88 90 98 A0 A8 B0 B8 C0 C8 D0 D8 E0 E8 F0 F8 BYTE (HEX) 80-C7 BYTE NAME POT1 ROW NAME LUT LUT LUT LUT LUT LUT LUT LUT LUT WORD 0 BYTE 0 POT1 POT1 POT1 POT1 POT1 POT1 POT1 POT1 POT1 Reserved Reserved Reserved Reserved Reserved Reserved Reserved BYTE 1 POT1 POT1 POT1 POT1 POT1 POT1 POT1 POT1 POT1 Reserved Reserved Reserved Reserved Reserved Reserved Reserved WORD 1 BYTE 2 POT1 POT1 POT1 POT1 POT1 POT1 POT1 POT1 POT1 Reserved Reserved Reserved Reserved Reserved Reserved Reserved BYTE 3 POT1 POT1 POT1 POT1 POT1 POT1 POT1 POT1 POT1 Reserved Reserved Reserved Reserved Reserved Reserved Reserved WORD 2 BYTE 4 POT1 POT1 POT1 POT1 POT1 POT1 POT1 POT1 POT1 Reserved Reserved Reserved Reserved Reserved Reserved Reserved BYTE 5 POT1 POT1 POT1 POT1 POT1 POT1 POT1 POT1 POT1 Reserved Reserved Reserved Reserved Reserved Reserved Reserved WORD 3 BYTE 6 POT1 POT1 POT1 POT1 POT1 POT1 POT1 POT1 POT1 Reserved Reserved Reserved Reserved Reserved Reserved Reserved BYTE 7 POT1 POT1 POT1 POT1 POT1 POT1 POT1 POT1 POT1 Reserved Reserved Reserved Reserved Reserved Reserved Reserved
EXPANDED BYTES BIT 7 27 BIT 6 26 BIT 5 25 BIT 4 24 BIT 3 23 BIT 2 22 BIT 1 21 BIT 0 20
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LDMOS RF Power-Amplifier Bias Controller DS1870
ROW (HEX) 80 88 90 98 A0 A8 B0 B8 C0 C8 D0 D8 E0 E8 F0 F8 BYTE (HEX) 80-C7 BYTE NAME POT2 ROW NAME LUT LUT LUT LUT LUT LUT LUT LUT LUT WORD 0 BYTE 0 BYTE 1 POT2 POT2 POT2 POT2 POT2 POT2 POT2 POT2 POT2 POT2 Reserved Reserved Reserved Reserved Reserved Reserved Reserved POT2 POT2 POT2 POT2 POT2 POT2 POT2 POT2 Reserved Reserved Reserved Reserved Reserved Reserved Reserved TABLE 3 ( POT2 TEMP LUT) WORD 1 WORD 2 BYTE 2 BYTE 3 BYTE 4 BYTE 5 POT2 POT2 POT2 POT2 POT2 POT2 POT2 POT2 POT2 POT2 POT2 POT2 Reserved Reserved Reserved Reserved Reserved Reserved Reserved POT2 POT2 POT2 POT2 POT2 POT2 POT2 POT2 Reserved Reserved Reserved Reserved Reserved Reserved Reserved POT2 POT2 POT2 POT2 POT2 POT2 POT2 POT2 Reserved Reserved Reserved Reserved Reserved Reserved Reserved POT2 POT2 POT2 POT2 POT2 POT2 POT2 POT2 Reserved Reserved Reserved Reserved Reserved Reserved Reserved WORD 3 BYTE 6 BYTE 7 POT2 POT2 POT2 POT2 POT2 POT2 POT2 POT2 POT2 POT2 Reserved Reserved Reserved Reserved Reserved Reserved Reserved POT2 POT2 POT2 POT2 POT2 POT2 POT2 POT2 Reserved Reserved Reserved Reserved Reserved Reserved Reserved
EXPANDED BYTES BIT 7 27 BIT 6 26 BIT 5 25 BIT 4 24 BIT 3 23 BIT 2 22 BIT 1 21 BIT 0 20
18
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LDMOS RF Power-Amplifier Bias Controller DS1870
ROW (HEX) 80 88 90 98 A0 A8 B0 B8 BYTE (HEX) 80-BF ROW NAME LUT LUT LUT LUT LUT LUT LUT LUT BYTE NAME POT1 Off WORD 0 BYTE 0 BYTE 1 POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off TABLE 4 ( POT1 DRAIN LUT) WORD 1 WORD 2 BYTE 2 BYTE 3 BYTE 4 BYTE 5 POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off WORD 3 BYTE 6 BYTE 7 POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off POT1 Off
EXPANDED BYTES BIT 7 S BIT 6 26 BIT 5 25 BIT 4 24 BIT 3 23 BIT 2 22 BIT 1 21 BIT 0 20
ROW (HEX) 80 88 90 98 A0 A8 B0 B8 BYTE (HEX) 80-BF
ROW NAME LUT LUT LUT LUT LUT LUT LUT LUT BYTE NAME POT2 Off
WORD 0 BYTE 0 BYTE 1 POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off
TABLE 5 (POT2 DRAIN LUT) WORD 1 WORD 2 BYTE 2 BYTE 3 BYTE 4 BYTE 5 POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off
WORD 3 BYTE 6 BYTE 7 POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off POT2 Off
EXPANDED BYTES BIT 7 S BIT 6 26 BIT 5 25 BIT 4 24 BIT 3 23 BIT 2 22 BIT 1 21 BIT 0 20
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19
LDMOS RF Power-Amplifier Bias Controller DS1870
Register Description
The register descriptions are organized by the register's row address starting with the lower memory, then proceeding through each lookup table in order. The format of the register description is shown below. TABLE NAME Name of Row Name of Byte

Description of the byte's function a) bit X bit X description b) bit Y bit Y description The Access value following each byte's name defines the read/write access for the register. Possible values are read-only (R), write-only (W), and read-write (R/W). The Volatility parameter defines if the memory is volatile (V) or nonvolatile (NV). Some registers correspond to values measured or detected by the DS1870. These parameters are read-only and listed as NA since their values are indeterminate. Power-On values are the default states of the volatile register, and the Factory Default values are the values the EEPROM memory is programmed to by the factory before they are shipped from Dallas Semiconductor. LOWER MEMORY User Row User EE <00h> NV EEPROM user memory. Threshold0 Temp Hi Alarm<0000h> Temperature measurements above this 2's complement threshold set its corresponding alarm bit. Measurements below this threshold clear the alarm bit. Vcc Hi Alarm <0000h> Voltage measurements of the VCC input above this unsigned threshold set its corresponding alarm bit. Measurements below this threshold clear the alarm bit. VD Hi Alarm <0000h> Voltage measurements of the VD input above this unsigned threshold set its corresponding alarm bit. Measurements below this threshold clear the alarm bit. ID1 Hi Alarm <0000h> Voltage measurements of the ID1 input above this unsigned threshold set its corresponding alarm bit. Measurements below this threshold clear the alarm bit. Threshold1 ID2 Hi Alarm <0000h> Voltage measurements of the ID2 input above this unsigned threshold set its corresponding alarm bit. Measurements below this threshold clear the alarm bit. Threshold2 Temp Lo Alarm<0000h> Temperature measurements below this 2's complement threshold set its corresponding alarm bit. Measurements above this threshold clear the alarm bit. Vcc Lo Alarm <0000h> Voltage measurements of the VCC below above this unsigned threshold set its corresponding alarm bit. Measurements above this threshold clear the alarm bit. VD Lo Alarm <0000h> Voltage measurements of the VD input below this unsigned threshold set its corresponding alarm bit. Measurements above this threshold clear the alarm bit. ID1 Lo Alarm <0000h> Voltage measurements of the ID1 input below this unsigned threshold set its corresponding alarm bit. Measurements above this threshold clear the alarm bit. Threshold3 ID1 Lo Alarm <0000h> Voltage measurements of the ID2 input below this unsigned threshold set its corresponding alarm bit. Measurements above this threshold clear the alarm bit.
20
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LDMOS RF Power-Amplifier Bias Controller
A2D Value0 Temp Value Vcc Value VD Value ID1 Value A2D Value1 ID2 Value Status Hi Alarm
DS1870
<0000h> The signed 2's complement direct-to-temperature measurement. <0000h> Unsigned VCC voltage measurement. <0000h> Unsigned VD voltage measurement. <0000h> Unsigned ID1 voltage measurement. <0000h> Unsigned ID2 voltage measurement. <00h> High-Alarm Status bits. High-alarm status for temperature measurement. High-alarm status for VCC measurement. High-alarm status for VD measurement. High-alarm status for ID1 measurement. High-alarm status for ID2 measurement. <40h> Low-Alarm Status bits. Low-alarm status for temperature measurement. Low-alarm status for VCC measurement. This bit is set when the VCC supply is below the POR trip-point value. It clears itself when a VCC measurement is completed and the value is above the low threshold. Low-alarm status for VD measurement. Low-alarm status for ID1 measurement. Low-alarm status for ID2 measurement.
a) Temp Hi b) Vcc Hi c) VD Hi d) ID1 Hi e) ID2 HI Lo Alarm a) Temp Lo b) Vcc Lo
c) VD Lo d) ID1 Lo e) ID2 Lo I/O Status a) Fault b) Mint
Status of the FAULT pin.
Logical value of the FAULT pin. Fault is logic HIGH during power-on. Maskable Interrupt. FAULT is an open-drain output. In case FAULT was pulled low externally or was missing the external pullup resistor, this bit reflects the logical value the DS1870 is trying to output on the FAULT pin. If any `Hi Alarm' or `Lo Alarm' is active and its corresponding `Fault Ena' bit is enabled, or `RDBY' is a 1, then this bit is active high. Otherwise, this bit is a zero. c) Rdyb Ready Bar. When the supply is above the power-on-analog (VPOA) trip point, this bit is active low. Thus, this bit reads a logic 1 if the supply is below VPOA or too low to communicate over the I2C bus. A2D Status <00h> Status of completed conversions. At power-on, these bits are cleared and are set as each conversion is completed. These bits can be cleared so that completion of new conversions may be verified. a) Temp Rdy Temperature conversion is ready. b) Vcc Rdy VCC conversion is ready. c) VD Rdy VD conversion is ready. d) ID1 Rdy ID1 conversion is ready. e) ID2 Rdy ID2 conversion is ready.
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21
LDMOS RF Power-Amplifier Bias Controller DS1870
PWE Password Entry. Until the correct password is written to this location, the only memory that can be written are addresses 78h to 7Fh. This includes the PWE and Table_Select locations. All memory is readable regardless of the PWE value. TBL Sel <00h> Table Select. The DS1870 contains four tables (1 to 5). Writing a (1 to 5) value to this register grants access to the corresponding table. TABLE 1 (CONFIGURATION) Config Password The PWE value is compared against the value written to this location. All EEPROM memory is write-protected when PWE does not match thisregister. LUT Sel a) VD2 b) VD1 Fault Ena <03h> Selects which inputs are used to control the lookup tables. A one selects the VD input to control the drain LUT indexing for POT2 (Table 5). A zero selects the ID2 input. A one selects the VD input to control the drain LUT indexing for POT1 (Table 4). A zero selects the ID1 input. <00h> Configures the maskable interrupt for the FAULT pin. Temperature measurements, outside the threshold limits, are enabled to create an active interrupt on the FAULT pin. VCC measurements, outside the threshold limits, are enabled to create an active interrupt on the FAULT pin. VD measurements, outside the threshold limits, are enabled to create an active interrupt on the FAULT pin. ID1 measurements, outside the threshold limits, are enabled to create an active interrupt on the FAULT pin. ID2 measurements, outside the threshold limits, are enabled to create an active interrupt on the FAULT pin. PWE
a) Temp Ena b) Vcc Ena c) VD Ena d) ID1 Ena e) ID2 Ena Scale0 Vcc Scale VD Scale ID1 Scale Scale1 ID2 Scale Offset0 Vcc Offset VD Offset ID1 Offset Offset1 ID2 Offset Temp Offset LUT Index
22
Controls the scaling or gain of the VCC measurements. The VCC gain is factory trimmed to 6.5535V FS. Controls the scaling or gain of the VD measurements. The VD gain is factory trimmed to 2.500V FS. Controls the scaling or gain of the ID1 measurements. The ID1 gain is factory trimmed to 0.5V FS. Controls the scaling or gain of the ID2 measurements. The ID2 gain is factory trimmed to 0.5V FS. <0000h> Allows for offset control of VCC measurement <0000h> Allows for offset control of VD measurement. <0000h> Allows for offset control of ID1 measurement. <0000h> Allows for offset control of ID2 measurement. <0000h> Allows for offset control of temperature measurement.
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LDMOS RF Power-Amplifier Bias Controller
T Index O1 Index O2 Index POT1 base <00h> Holds the calculated index based on the temperature measurement. This index is used to address LUTs 2 and 3. <00h> Holds the calculated index based on the VD or ID1 measurement (dependant on `LUT Sel' byte). This index is used to address LUT 4. <00h> Holds the calculated index based on the VD or ID2 measurement (dependant on `LUT Sel' byte). This index is used to address LUT 5. <00h> The base value used for POT1 and recalled from Table 2 at the memory address found in `T Index.' This register is updated at the end of the temperature conversion. POT1 is not updated with this value until the end of ID2 conversion to ensure that both the base and the offset are known for POT1 and POT2 and they are updated simultaneously. <00h> The offset value used for POT1 and recalled from Table 4 at the memory address found in `O1 Index.' Depending on the value written to `LUT Sel' byte, this register is updated at the end of the VD or ID1 conversion. POT1 is not updated with this value until the end of ID2 conversion to ensure that both the base and the offset are known for POT1 and POT2 and they are updated simultaneously. <00h> The base value used for POT2 and recalled from Table 3 at the memory address found in `T Index.' This register is updated at the end of the temperature conversion. POT2 is not updated with this value until the end of ID2 conversion to ensure that both the base and the offset are known for POT1 and POT2 and they are updated simultaneously. <00h> The Offset value used for POT2 and recalled from Table 5 at the memory address found in `O2 Index.' Depending on the value written to `LUT Sel' byte, this register is updated at the end of the VD or ID2 conversion. POT2 is not updated with this value until the end of ID2 conversion to ensure that both the base and the offset are known for POT1 and POT2 and they are updated simultaneously. <03h> Allows user to control either the LUT Index or the base and offset values used to calculate the potentiometer positions. Shadow EE bar. At power-on this bit is low, which enables EE writes to all shadowed EE locations. If written to a one, this bit allows for trimming and/or configuring the part without changing the NV-shadowed EE memory and not having to wait for the EE cycle time to complete. Writing this bit to a zero does not cause a write from the SRAM to copy into the EE. Shadow EE locations are addresses 20h to 3Fh and Table 180h to A7h. At power-on this bit is high, which enables auto control of the LUT. If this bit is written to a zero, then the POT base and offset are writeable by the user and the LUT recalls are disabled. This allows the user to interactively test their modules by writing the base and/or offsets for the POTs. The POTs update with the new value at the end of the write cycle. Thus, all four registers (`POT1 Base,' `POT1 Off,' `POT2 Base,' and `POT2 OFF') should be written in the same write cycle. The I2C stop condition is the end of the write cycle. At power-on this bit is high, which enables auto control of the LUT. If this bit is cleared to a zero, then the three index values (`T index,' `O1 Index,' and `O2 Index') are writeable by the user and the updates of calculated indexes are disabled. This allows the user to interactively test their modules by controlling the indexing for the lookup tables. All three index values should be written in the same write cycle. The recalled values from the LUTs appear in the base and offset register after each corresponding conversion (just like it would happen in auto mode). To ensure the recalled base and offset values from the LUT are updated, the base and offset calculation will not update the potentiometers until the completion of the next temperature and ID2 conversion. Both pots update at the same time (just like it would happen in auto mode).
DS1870
POT1 off
POT2 base
POT2 off
MAN Dac a) SEE
b) B/O_en
c) Index_en
____________________________________________________________________
23
LDMOS RF Power-Amplifier Bias Controller DS1870
TABLE 2 (TEMP LUT FOR POT 1) Bytes 80h-C7h POT1 <00h>The unsigned base value for POT1. TABLE 3 (TEMP LUT FOR POT 2) Bytes 80h-C7h POT2 <00h>The unsigned base value for POT2. TABLE 4 (DRAIN LUT FOR POT 1) Bytes 80h-B8h POT1 Off <00h>The signed 2's complement offset value for POT1. TABLE 5 (DRAIN LUT FOR POT 2) Bytes 80h-B8h POT2 Off <00h>The signed 2's complement offset value for POT2.
I2C Definitions
The following terminology is commonly used to describe I2C data transfers. Master device: The master device controls the slave devices on the bus. The master device generates SCL clock pulses, and start and stop conditions. Slave devices: Slave devices send and receive data at the master's request. Bus idle or not busy: Time between stop and start conditions when both SDA and SCL are inactive and in their logic high states. When the bus is idle, it often initiates a low-power mode for slave devices. Start condition: A start condition is generated by the master to initiate a new data transfer with a slave. Transitioning SDA from high to low while SCL remains high generates a start condition. See the timing diagram for applicable timing.
Stop condition: A stop condition is generated by the master to end a data transfer with a slave. Transitioning SDA from low to high while SCL remains high generates a stop condition. See the timing diagram for applicable timing. Repeated start condition: The master can use a repeated start condition at the end of one data transfer to indicate that it will immediately initiate a new data transfer following the current one. Repeated starts are commonly used during read operations to identify a specific memory address to begin a data transfer. A repeated start condition is issued identically to a normal start condition. See the timing diagram for applicable timing. Bit write: Transitions of SDA must occur during the low state of SCL. The data on SDA must remain valid and unchanged during the entire high pulse of SCL plus the
SDA
tBUF tLOW tR tF
tHD:STA
tSP
SCL tHD:STA STOP START tHD:DAT NOTE: TIMING IS REFERENCED TO VIL(MAX) AND VIH(MIN). tHIGH tSU:DAT REPEATED START tSU:STA tSU:STO
Figure 3. I2C Timing Diagram 24 ____________________________________________________________________
LDMOS RF Power-Amplifier Bias Controller
7-BIT SLAVE ADDRESS 1 0 1 0 A2 A1 A0 R/W
following a start condition. The slave address byte (Figure 4) contains the slave address in the most significant 7 bits and the R/W bit in the least significant bit. The DS1870's slave address is 1010A2A1A0 (binary), where A2, A1, and A0 are the values of the address pins. The address pins allow the device to respond to one of eight possible slave addresses. By writing the correct slave address with R/W = 0, the master indicates it will write data to the slave. If R/W = 1, the master will read data from the slave. If an incorrect slave address is written, the DS1870 assumes the master is communicating with another I2C device and ignores the communications until the next start condition is sent. Memory address: During an I2C write operation, the master must transmit a memory address to identify the memory location where the slave is to store the data. The memory address is always the second byte transmitted during a write operation following the slave address byte.
DS1870
MOST SIGNIFICANT BIT
A2, A1, AND A0 PIN VALUES
DETERMINES READ OR WRITE
Figure 4. Slave Address Byte setup and hold time requirements (Figure 3). Data is shifted into the device during the rising edge of the SCL. Bit read: At the end a write operation, the master must release the SDA bus line for the proper amount of setup time (Figure 3) before the next rising edge of SCL during a bit read. The device shifts out each bit of data on SDA at the falling edge of the previous SCL pulse and the data bit is valid at the rising edge of the current SCL pulse. Remember that the master generates all SCL clock pulses, including when it is reading bits from the slave. Acknowledgement (ACK and NACK): An acknowledgement (ACK) or not acknowledge (NACK) is always the 9th bit transmitted during a byte transfer. The device receiving data (the master during a read or the slave during a write operation) performs an ACK by transmitting a zero during the 9th bit. A device performs a NACK by transmitting a one during the 9th bit. Timing (Figure 3) for the ACK and NACK is identical to all other bit writes. An ACK is the acknowledgment that the device is properly receiving data. A NACK is used to terminate a read sequence or as an indication that the device is not receiving data. Byte write: A byte write consists of 8 bits of information transferred from the master to the slave (most significant bit first) plus a 1-bit acknowledgement from the slave to the master. The 8 bits transmitted by the master are done according to the bit write definition and the acknowledgement is read using the bit read definition. Byte read: A byte read is an 8-bit information transfer from the slave to the master plus a 1-bit ACK or NACK from the master to the slave. The 8 bits of information that are transferred (most significant bit first) from the slave to the master are read by the master using the bit read definition above, and the master transmits an ACK using the bit write definition to receive additional data bytes. The master must NACK the last byte read to terminated communication so the slave will return control of SDA to the master. Slave address byte: Each slave on the I 2 C bus responds to a slave addressing byte sent immediately
I2C Communication
Writing a single byte to a slave: The master must generate a start condition, write the slave address byte (R/W = 0), write the memory address, write the byte of data, and generate a stop condition. Remember the master must read the slave's acknowledgement during all byte write operations. Writing multiple bytes to a slave: To write multiple bytes to a slave, the master generates a start condition, writes the slave address byte (R/W = 0), writes the memory address, writes up to 8 data bytes, and generates a stop condition. The DS1870 writes 1 to 8 bytes (1 page or row) with a single write transaction. This is internally controlled by an address counter that allows data to be written to consecutive addresses without transmitting a memory address before each data byte is sent. The address counter limits the write to one 8-byte page (one row of the memory map). Attempts to write to additional pages of memory without sending a stop condition between pages results in the address counter wrapping around to the beginning of the present row. Example: A 3-byte write starts at address 06h and writes three data bytes (11h, 22h, and 33h) to three "consecutive" addresses. The result is that addresses 06h and 07h would contain 11h and 22h, respectively, and the third data byte, 33h, would be written to address 00h. To prevent address wrapping from occurring, the master must send a stop condition at the end of the page, then wait for the bus-free or EEPROM-write time to elapse. Then the master can generate a new start con25
____________________________________________________________________
LDMOS RF Power-Amplifier Bias Controller
dition, and write the slave address byte (R/W = 0) and the first memory address of the next memory row before continuing to write data. Acknowledge polling: Any time an EEPROM page is written, the DS1870 requires the EEPROM write time (tW) after the stop condition to write the contents of the page to EEPROM. During the EEPROM write time, the DS1870 will not acknowledge its slave address because it is busy. It is possible to take advantage of that phenomenon by repeatedly addressing the DS1870, which allows the next page to be written as soon as the DS1870 is ready to receive the data. The alternative to acknowledge polling is to wait for maximum period of tW to elapse before attempting to write again to the DS1870. EEPROM write cycles: When EEPROM writes occur, the DS1870 writes the whole EEPROM memory page, even if only a single byte on the page was modified. Writes that do not modify all 8 bytes on the page are allowed and do not corrupt the remaining bytes of memory on the same page. Because the whole page is written, bytes on the page that were not modified during the transaction are still subject to a write cycle. This can result in a whole page being worn out over time by writing a single byte repeatedly. Writing a page one
COMMUNICATIONS KEY S START A ACK NOT ACK XX XX WHITE BOXES INDICATE THE MASTER IS CONTROLLING SDA SHADED BOXES INDICATE THE SLAVE IS CONTROLLING SDA XX XX 8 BITS ADDRESS OR DATA NOTES: 1) ALL BYTES ARE SENT MOST SIGNIFICANT BIT FIRST. 2) THE FIRST BYTE SENT AFTER A START CONDITION IS ALWAYS THE SLAVE ADDRESS, FOLLOWED BY THE READ/WRITE BIT.
byte at a time wears the EEPROM out eight times faster than writing the entire page at once. The DS1870's EEPROM write cycles are specified in the Nonvolatile Memory Characteristics table. The specification shown is at the worst-case temperature. It can handle approximately 10x that many writes at room temperature. Writing to SRAM-shadowed EEPROM memory with SEE = 1 does not count as an EEPROM write cycle when evaluating the EEPROM's estimated lifetime. Reading a single byte from a slave: Unlike the write operation that uses the memory address byte to define where the data is to be written, the read operation occurs at the present value of the memory address counter. To read a single byte from the slave, the master generates a start condition, writes the slave address byte with R/W = 1, reads the data byte with a NACK to indicate the end of the transfer, and generates a stop condition. Manipulating the address counter for reads: A dummy write cycle can be used to force the address counter to a particular value. To do this, the master generates a start condition, writes the slave address byte (R/W = 0), writes the memory address where it desires to read, generates a repeated start condition, writes the slave address byte (R/W = 1), reads data with ACK or NACK as applicable, and generates a stop condition.
DS1870
P
STOP REPEATED START
N
Sr
WRITE A SINGLE BYTE S 1 0 1 0 A2 A1 A 0 0 A MEMORY ADDRESS A DATA A P
WRITE UP TO AN 8-BYTE PAGE WITH A SINGLE TRANSACTION S 1 0 1 0 A2 A1 A0 0 A MEMORY ADDRESS A DATA A DATA A P
READ A SINGLE BYTE WITH A DUMMY WRITE CYCLE TO MOVE THE ADDRESS COUNTER S 1 0 1 0 A2 A1 A0 0 A MEMORY ADDRESS A Sr 10 1 0 A2 A1 A0 1 A DATA N P
READ MULTIPLE BYTES WITH A DUMMY WRITE CYCLE TO MOVE THE ADDRESS COUNTER S 1 0 1 0 A2 A1 A0 0 A MEMORY ADDRESS A Sr 10 1 0 A2 A1 A0 1 A DATA A
DATA
A
DATA
A
DATA
N
P
Figure 5. I2C Communications Examples 26 ____________________________________________________________________
LDMOS RF Power-Amplifier Bias Controller
Typical Operating Circuit
5V 28V
DS1870
4.7k 3 PLACES
VCC FAULT SDA SCL A2 A1 A0 VD ID1 RPOT2 RS2 RS1 RPOT1 ID2 N.C. N.C.
DS1870
FACTORY-CALIBRATED 13-BIT ADC (CUSTOMER ADJUSTABLE FULLSCALE AND OFFSET VALUES)
49.9k
4.22k
W2
N.C.
N.C.
MAX6165B 5V REFERENCE
W1
GND
HCOM
L2
L1
RFIN
RF POWER AMP
RFOUT
NOTES: 1) IN THIS CONFIGURATION, THE VOLTAGE RANGE OF W1 AND W2 IS 3V-5V. THIS RANGE CAN BE EXTENDED USING EXTERNAL RESISTORS. 2) ONE MAX6156B CAN BE USED WITH MULTIPLE DS1870s.
See Figure 5 for a read example using the repeated start condition to specify the starting memory location. Reading multiple bytes from a slave: The read operation can be used to read multiple bytes with a single transfer. When reading bytes from the slave, the master simply ACKs the data byte if it desires to read another byte before terminating the transaction. After the master reads the last byte it NACKs to indicate the end of the transfer and generates a stop condition. This can be done with or without modifying the address counter's location before the read cycle. The DS1870's address counter does not wrap on page boundaries during read
operations, but the counter will roll from its upper most memory address FFh to 00h if the last memory location is read during the read transaction.
Application Information
Power-Supply Decoupling
To achieve best results, it is recommended that the power supply is decoupled with a 0.01F or a 0.1F capacitor. Use high-quality, ceramic, surface-mount capacitors, and mount the capacitors as close as possible to the VCC and GND pins to minimize lead inductance.
____________________________________________________________________
27
LDMOS RF Power-Amplifier Bias Controller DS1870
SDA and SCL Pullup Resistors
SDA is an open-collector output on the DS1870 that requires a pullup resistor to realize high logic levels. A master using either an open-collector output with a pullup resistor or a push-pull output driver can be used for SCL. Pullup resistor values should be chosen to ensure that the rise and fall times listed in the AC electrical characteristics are within specification.
Advanced Application
A circuit showing the implementaion of current sensing using the DS1870 is shown under "Advanced Application".
Advanced Application with Current Sense
5V 28V
4.7k 3 PLACES
VCC FAULT SDA SCL A2 A1 A0 ID2 VD
49.9k (1%)
DS1870
4.22k (1%)
ID1
MAX4080
LOW PASS FILTER
RPOT2
RS2
RS1
RPOT1
W2
N.C.
N.C.
MAX6165B 5V REFERENCE
W1
GND
HCOM
MAX4080
L2
L1
LOW PASS FILTER
RFIN
RF POWER AMP
RFOUT
NOTES: 1) IN THIS CONFIGURATION, THE VOLTAGE RANGE OF W1 AND W2 IS 3V-5V. THIS RANGE CAN BE EXTENDED USING EXTERNAL RESISTORS. 2) ONE MAX6156B CAN BE USED WITH MULTIPLE DS1870s.
Chip Information
TRANSISTOR COUNT: 52,353 SUBSTRATE CONNECTED TO GROUND
Package Information
For the latest package outline information, go to www.maxim-ic.com/DallasPackInfo.
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
28 ____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 (c) 2004 Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products.
DALLAS is a registered trademark of Dallas Semiconductor Corporation.

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