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| PROFET(R) Data Sheet BTS660P Smart Highside High Current Power Switch Reversave * Reverse battery protection by self turn on of power MOSFET Features * Overload protection * Current limitation * Short circuit protection * Overtemperature protection * Overvoltage protection (including load dump) * Clamp of negative voltage at output * Fast deenergizing of inductive loads 1) * Low ohmic inverse current operation * Diagnostic feedback with load current sense * Open load detection via current sense * Loss of Vbb protection2) * Electrostatic discharge (ESD) protection * Power switch with current sense diagnostic feedback for up to 48 V DC grounded loads * Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads * Replaces electromechanical relays, fuses and discrete circuits Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current (ISO) Short circuit current limitation Current sense ratio 70 V Vbb(AZ) VON(CL) 62 V Vbb(on) 5.0 ... 58 V RON 9 m IL(ISO) 44 A IL(SC) 90 A IL : IIS 13 000 TO 220-7SMD Application 7 1 7 Standard SMD 1 General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOSa chip on chip technology. Fully protected by embedded protection functions. 4 & Tab R + V bb bb Voltage source Overvoltage protection Current limit Gate protection Voltage sensor Charge pump Level shifter Rectifier Limit for unclamped ind. loads Output Voltage detection Current Sense OUT 1,2,6,7 IL 3 IN Load ESD I IN Logic Temperature sensor IS I IS a PROFET Load GND VIN V IS Logic GND 5 R IS 1 2) ) With additional external diode. Additional external diode required for energized inductive loads (see page 9). Infineon Technologies AG Page 1 of 16 2001-May-30 Data Sheet BTS660P Pin 1 2 3 4 Symbol OUT OUT IN Vbb O O I Function Output to the load. The pins 1,2,6 and 7 must be shorted with each other 3 especially in high current applications! ) Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications!3) Input, activates the power switch in case of short to ground Positive power supply voltage, the tab is electrically connected to this pin. In high current applications the tab should be used for the Vbb connection 4 instead of this pin ). Diagnostic feedback providing a sense current proportional to the load current; zero current on failure (see Truth Table on page 7) Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications!3) Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications!3) + 5 6 7 IS OUT OUT S O O Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection, (EAS limitation see diagram on page 9) Tj,start =-40 ...+150C: Load current (short circuit current, see page 5) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI5) = 2 , RL = 0.23 , td = 200 ms, IN, IS = open or grounded Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C, TC = 150C const., IL = 20 A, ZL = 6 mH, 0 , see diagrams on page 10 Electrostatic discharge capability (ESD) Human Body Model acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993, C = 100 pF, R = 1.5 k Symbol Vbb Vbb IL VLoad dump Tj Tstg Ptot EAS VESD IIN IIS 6) Values 62 58 self-limited 80 -40 ...+150 -55 ...+150 170 1.2 4.0 +15 , -250 +15 , -250 Unit V V A V C W J kV mA Current through input pin (DC) Current through current sense status pin (DC) see internal circuit diagrams on page 7 and 8 3) 4) 5) 6) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy Otherwise add up to 0.7 m (depending on used length of the pin) to the RON if the pin is used instead of the tab. RI = internal resistance of the load dump test pulse generator. VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839. Infineon Technologies AG Page 2 2001-May-30 Data Sheet BTS660P Thermal Characteristics Parameter and Conditions Thermal resistance Symbol min --7 chip - case: RthJC ) junction - ambient (free air): RthJA SMD version, device on PCB8): Values typ max -- 0.75 60 -33 Unit K/W Electrical Characteristics Parameter and Conditions at Tj = -40 ... +150 C, Vbb = 24 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (Tab to pins 1,2,6,7, see measurement circuit page 7) IL = 20 A, Tj = 25 C: VIN = 0, IL = 20 A, Tj = 150 C: IL = 80 A, Tj = 150 C: Vbb =6V, IL =20A, Tj =150C: 9) Nominal load current (Tab to pins 1,2,6,7) ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 C 10) Nominal load current9), device on PCB8)) TA = 85 C, Tj 150 C VON 0.5 V, Maximum load current in resistive range (Tab to pins 1,2,6,7) VON = 1.8 V, Tc = 25 C: see diagram on page 13 VON = 1.8 V, Tc = 150 C: 11) Turn-on time IIN to 90% VOUT: to 10% VOUT: Turn-off time IIN RL = 1 , Tj =-40...+150C Slew rate on 11) (10 to 30% VOUT ) RL = 1 Slew rate off 11) (70 to 40% VOUT ) RL = 1 RON -- RON(Static) IL(ISO) 38 7.2 14.6 -17 44 9 17 17 22 -- m A IL(NOM) IL(Max) ton toff dV/dton -dV/dtoff 9.9 185 105 50 30 1.0 1.1 11.1 ----1.5 1.9 ---400 110 2.2 2.6 A A s V/s V/s 7) Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included! Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. 9) Not tested, specified by design. 10) TJ is about 105C under these conditions. 11) See timing diagram on page 14. 8) Infineon Technologies AG Page 3 2001-May-30 Data Sheet BTS660P Parameter and Conditions at Tj = -40 ... +150 C, Vbb = 24 V unless otherwise specified Symbol Values min typ max Unit Inverse Load Current Operation On-state resistance (Pins 1,2,6,7 to pin 4) VbIN = 12 V, IL = - 20 A Tj = 25 C: RON(inv) see diagram on page 10 Tj = 150 C: Nominal inverse load current (Pins 1,2,6,7 to Tab) IL(inv) 10 VON = -0.5 V, Tc = 85 C Drain-source diode voltage (Vout > Vbb) -VON IL = - 20 A, IIN = 0, Tj = +150C Operating Parameters Operating voltage (VIN = 0) 12) Undervoltage shutdown 13) Undervoltage start of charge pump see diagram page 15 Overvoltage protection14) Tj =-40C: Ibb = 15 mA Tj = 25...+150C: Standby current Tj =-40...+25C: IIN = 0, Vbb=35V Tj = 150C: -50 -- 7.2 14.6 60 0.6 9 17 -0.7 m A mV Vbb(on) VbIN(u) VbIN(ucp) VbIN(Z) Ibb(off) 5.0 1.5 3.0 68 70 --- -3.0 4.5 -72 15 25 58 4.5 6.0 --25 50 V V V V A 12) If the device is turned on before a Vbb-decrease, the operating voltage range is extended down to VbIN(u). For the voltage range 0..58 V the device is fully protected against overtemperature and short circuit. 13) VbIN = Vbb - VIN see diagram on page 15. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V (typ.) the charge pump is not active and VOUT Vbb - 3 V. 14) See also VON(CL) in circuit diagram on page 9. Infineon Technologies AG Page 4 2001-May-30 Data Sheet BTS660P Parameter and Conditions at Tj = -40 ... +150 C, Vbb = 24 V unless otherwise specified Symbol Values min typ max Unit Protection Functions Short circuit current limit (Tab to pins 1,2,6,7)15) VON = 24 V, time until shutdown max. 300 s Tc =-40C: see diagram page 8 Tc =25C: Tc =+150C: Short circuit shutdown delay after input current positive slope, VON > VON(SC) min. value valid only if input "off-signal" time exceeds 30 s IL(SC) IL(SC) IL(SC) td(SC) --50 80 62 -150 -- 90 90 80 -65 6 -10 180 --350 69 ---- A s V V C K Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) (e.g. overvoltage) IL= 40 mA Short circuit shutdown detection voltage (pin 4 to pins 1,2,6,7) VON(CL) VON(SC) Tjt Tjt Thermal overload trip temperature Thermal hysteresis Reverse Battery Reverse battery voltage 16) -Vbb On-state resistance (Pins 1,2,6,7 to pin 4) Tj = 25 C: RON(rev) Vbb = -12V, VIN = 0, IL = - 20 A, RIS = 1 k Tj = 150 C: Integrated resistor in Vbb line Tj = 25 C: Tj = 150 C: Rbb --90 105 -8.8 -120 125 42 10.5 20 135 150 V m 15 ) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit by permanent resetting the short circuit latch function. The lifetime will be reduced under such condition. 16) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! To reduce the power dissipation at the integrated Rbb resistor an input resistor is recommended as described on page 9. Infineon Technologies AG Page 5 2001-May-30 Data Sheet BTS660P Parameter and Conditions at Tj = -40 ... +150 C, Vbb = 24 V unless otherwise specified Symbol Values min typ max Unit Diagnostic Characteristics Current sense ratio, static on-condition, kILIS = IL : IIS, 17 VON < 1.5 V ), VIS IL = 80 A,Tj =-40C: kILIS Tj =25C: Tj =150C: IL = 20 A,Tj =-40C: Tj =25C: Tj =150C: IL = 10 A,Tj =-40C: Tj =25C: Tj =150C: IL = 4 A,Tj =-40C: Tj =25C: Tj =150C: IIS,lim IIN = 0, IIS=0 (e.g. during deenergizing of inductive loads): Sense current saturation Current sense leakage current IIN = 0 IIS(LL) VIN = 0, IL < 0: IIS(LH) Current sense overvoltage protection Tj =-40C: VbIS(Z) Ibb = 15 mA Tj = 25...+150C: 18) Current sense settling time ts(IS) 11 400 11 400 11 000 11 000 11 000 11 000 10 500 10 500 11 000 9 000 10 000 10 800 -6.5 --68 70 -- 13 000 13 000 13 000 13 000 13 000 13 000 13 000 13 000 13 000 13 000 13 000 13 000 ---2 -72 -- 15 400 14 600 14 200 16 000 15 000 14 500 17 000 15 500 15 000 22 000 18 500 16 000 --0.5 ---500 mA A V s Input Input and operating current (see diagram page 13) IIN(on) IN grounded (VIN = 0) --- 0.8 -- 1.5 80 mA A Input current for turn-off19) IIN(off) 17) If VON is higher, the sense current is no longer proportional to the load current due to sense current saturation, see IIS,lim . 18) Not tested, specified by design. 19) We recommend the resistance between IN and GND to be less than 0.5 k for turn-on and more than 500k for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. Infineon Technologies AG Page 6 2001-May-30 Data Sheet BTS660P Truth Table Input current level Normal operation Very high load current Currentlimitation Short circuit to GND Overtemperature Short circuit to Vbb Open load Negative output voltage clamp Inverse load current L H H H L H L H L H L H L L H Output level L H H H L L L L H H 21 Z) H L H H Current Sense IIS 0 nominal IIS, lim 0 0 0 0 0 0 20 L = "Low" Level H = "High" Level Overtemperature reset by cooling: Tj < Tjt (see diagram on page 15) Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14) Terms I bb VbIN 4 Vbb IL V bb RIN V IN RON measurement layout VON l 5.5mm 3 IN PROFET IS 5 OUT 1,2,6,7 I IN VbIS V IS I IS DS R IS Vbb force tt VOUT Out Force Sense contacts contacts (both out pins parallel) Typical RON for SMD version is about 0.2 m less than straight leads due to l 2 mm Two or more devices can easily be connected in parallel to increase load current capability. 20) 21) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS. Power Transistor "OFF", potential defined by external impedance. Infineon Technologies AG Page 7 2001-May-30 Data Sheet BTS660P Input circuit (ESD protection) V bb Current sense status output Vbb R bb ZD IS V V V bIN ZD R bb Z,IS Z,IN IN I IN IIS R IS VIS V IN When the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. Use a mechanical switch, a bipolar or MOS transistor with appropriate breakdown voltage as driver. VZ,IN = 74 V (typ). Short circuit detection Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC) (80 ...300 s). + Vbb VZ,IS = 74 V (typ.), RIS = 1 k nominal (or 1 k /n, if n devices are connected in parallel). IS = IL/kilis can be driven only by the internal circuit as long as Vout - VIS > 5 V. If you want measure load currents up to IL(M), RIS Vbb - 5 V should be less than I . L(M) / Kilis Note: For large values of RIS the voltage VIS can reach almost Vbb. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open. Inductive and overvoltage output clamp + Vbb VZ1 V ON VON OUT OUT Logic unit Short circuit detection PROFET IS V OUT VON is clamped to VON(Cl) = 62 V typ Infineon Technologies AG Page 8 2001-May-30 Data Sheet BTS660P Overvoltage protection of logic part + Vbb V R IN Z,IN V Z,IS Vbb disconnect with energized inductive load Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL < 70 V or VZb < 42 V if RIN=0). For higher clamp voltages currents at IN and IS have to be limited to 250 mA. R bb IN Logic V OUT IS Version a: V PROFET RV Signal GND bb IN V bb OUT R IS V Z,VIS PROFET Rbb = 120 typ., VZ,IN = VZ,IS = 74 V typ., RIS = 1 k nominal. Note that when overvoltage exceeds 79 V typ. a voltage above 5V can occur between IS and GND, if RV, VZ,VIS are not used. IS V ZL Reverse battery protection - Vbb R bb Version b: V IN OUT bb IN Vbb PROFET OUT R IN Logic IS Power Transistor IS DS RL RV Power GND V Zb D Signal GND RIS RV 1 k, RIS = 1 k nominal. Add RIN for reverse Version c: Sometimes a neccessary voltage clamp is battery protection in applications with Vbb above 16V16); given by non inductive loads R connected to the same L 1 1 0.1A 1 recommended value: R + R + R = |V | - 12V if DS switch and eliminates the need of clamping circuit: IN IS V bb 1 0.1A is not used (or R = |V | - 12V if DS is used). IN bb To minimize power dissipation at reverse battery V Vbb bb RL operation, the summarized current into the IN and IS pin should be about 120mA. The current can be OUT IN PROFET provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through RIS and RV. IS Note that there is no reverse battery protection when using a diode without additional Z-diode VZL, VZb. Infineon Technologies AG Page 9 2001-May-30 Data Sheet BTS660P Inverse load current operation Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150C, Vbb = 40 V, RL = 0 V bb + IN Vbb - IL PROFET IS OUT L [H] 10000 - V OUT + IIS - V IN V IS R IS 1000 The device is specified for inverse load current operation (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). With IIN = 0 (e.g. input open) only the intrinsic drain source diode is conducting resulting in considerably increased power dissipation. If the device is switched on (VIN = 0), this power dissipation is decreased to the much lower value RON(INV) * I2 (specifications see page 4). Note: Temperature protection during inverse load current operation is not possible! 100 10 1 10 100 1000 Inductive load switch-off energy dissipation E bb E AS V V bb ELoad bb i L(t) IN PROFET OUT EL I [A] Externally adjustable current limit If the device is conducting, the sense current can be used to reduce the short circuit current and allow higher lead inductance (see diagram above). The device will be turned off, if the threshold voltage of T2 is reached by IS*RIS . After a delay time defined by RV*CV T1 will be reset. The device is turned on again, the short circuit current is defined by IL(SC) and the device is shut down after td(SC) with latch function. Vbb IS I ZL { L IN RIS RL ER Energy stored in load inductance: EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= o VON(CL)*iL(t) dt, with an approximate solution for RL > 0 : IL* L EAS= 2*R (Vbb + |VOUT(CL)|) L IN Signal RV V bb 2 IN PROFET OUT IS Rload T1 Signal GND CV T2 R IS Power GND ln (1+ |V IL*RL OUT(CL) |) Infineon Technologies AG Page 10 2001-May-30 Data Sheet BTS660P Options Overview Type BTS 660P X X X X 23 X) Overtemperature protection with hysteresis Tj >150 C, latch function22) Tj >150 C, with auto-restart on cooling Short circuit to GND protection switches off when VON>6 V typ. (when first turned on after approx. 180 s) Overvoltage shutdown Output negative voltage transient limit to Vbb - VON(CL) to VOUT = -15 V typ 22) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch between turn on and td(SC). 23) Can be "switched off" by using a diode DS (see page 8) or leaving open the current sense output. Infineon Technologies AG Page 11 2001-May-30 Data Sheet BTS660P Characteristics Current sense versus load current: IIS = f(IL), TJ= -40 ... +150 C IIS [mA] 7 6 5 4 3 min 2 1 0 0 20 40 60 80 IL [A] Current sense ratio: KILIS = f(IL), Tj= -40C kilis Current sense ratio: KILIS = f(IL), Tj= 150C kilis 12000 min max 16000 max Current sense ratio: KILIS = f(IL), Tj= 25C kilis 20000 18000 14000 typ 10000 8000 0 20 40 60 80 IL [A] 24000 22000 20000 18000 20000 18000 16000 14000 1200 10000 8000 0 20 40 60 80 IL [A] min 12000 min 10000 0 20 40 60 80 IL [A] max max 14000 typ typ 16000 Infineon Technologies AG Page 12 2001-May-30 Data Sheet BTS660P Typ. current limitation characteristic IL = f (VON, Tj ) IL [A] 400 350 300 250 200 150 100 T 50 0 0 VON(FB)5(Fold Back) 10 15 20 j Typ. input current IIN = f (VbIN), VbIN = Vbb - VIN IIN [mA] 1.6 1.4 VON>V ON(SC) only for t < t d(SC) (otherwise immediate shutdown) 1.2 1.0 0.8 0.6 0.4 = -40C 150C 25C 0.2 0 0 VON [V] 20 40 60 80 VbIN [V] In case of VON > VON(SC) (typ. 6 V) the device will be switched off by internal short circuit detection. Typ. on-state resistance RON = f (Vbb, Tj ); IL = 20 A; VIN = 0 RON [mOhm] 18 16 14 12 10 8 6 4 0 5 10 static dynamic Tj = 150C 85C 25C -40C 15 40 Vbb [V] Infineon Technologies AG Page 13 2001-May-30 Data Sheet BTS660P Timing diagrams Figure 1a: Switching a resistive load, change of load current in on-condition: Figure 2b: Switching an inductive load: IIN IIN VOUT 90% t on dV/dton 10% t off dV/dtoff VOUT IL tslc(IS) t slc(IS) IL Load 1 Load 2 IIS t t IIS tson(IS) t soff(IS) The sense signal is not valid during a settling time after turn-on/off and after change of load current. Figure 3a: Short circuit: shut down by short circuit detection, reset by IIN = 0. Figure 2a: Switching motors and lamps: IIN IIN IL IL(SCp) VOUT td(SC) IIL IIS VOUT>>0 VOUT=0 t IIS t Shut down remains latched until next reset via input. Sense current saturation can occur at very high inrush currents (see IIS,lim on page 6). Infineon Technologies AG Page 14 2001-May-30 Data Sheet BTS660P Figure 4a: Overtemperature Reset if Tj IIS VOUT Auto Restart Tj t Figure 6a: Undervoltage restart of charge pump, overvoltage clamp VOUT VIN = 0 VON(CL) 6 4 dynamic, short Undervoltage not below VbIN(u) 2 IIN = 0 V ON(CL) 0 0 V bIN(u) 4 V bIN(ucp) Infineon Technologies AG Page 15 2001-May-30 Data Sheet BTS660P Package and Ordering Code All dimensions in mm TO-220-7-3 BTS660P Ordering code Q67060-S6309 Published by Infineon Technologies AG i Gr., Bereichs Kommunikation St.-Martin-Strasse 76, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings TO 220-7SMD, Opt. E3180 Ordering code BTS660P E3180A T&R: Q67060-S6310 Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Footprint: 10.8 9.4 16.15 4.6 0.47 0.8 8.42 Infineon Technologies AG Page 16 2001-May-30 |
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