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PD - 94290
GA100NA60U
INSULATED GATE BIPOLAR TRANSISTOR
Features
* UltraFastTM: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode * Very low conduction and switching losses * Fully isolated package (2,500 Volt AC/RMS) * Very low internal inductance ( 5 nH typ.) * Industry standard outline
2 1
Ultra-FastTM Speed IGBT
3
VCES = 600V VCE(on) typ. = 1.49V
@VGE = 15V, IC = 50A
4
Benefits
* Designed for increased operating efficiency in power conversion: PFC, UPS, SMPS, Welding, Induction heating * Lower overall losses available at frequencies 20kHz * Easy to assemble and parallel * Direct mounting to heatsink * Lower EMI, requires less snubbing * Plug-in compatible with other SOT-227 packages
SOT-227
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE VISOL PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t=1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Mounting Torque, 6-32 or M3 Screw
Max.
600 100 50 200 200 20 2500 250 100 -55 to + 150 -55 to + 150 12 lbf *in(1.3N*m)
Units
V A
V
W
C
Thermal Resistance
Parameter
RJC RJC RCS Wt Junction-to-Case, IGBT Thermal Resistance, Junction-to-Case , Diode Case-to-Sink, Flat, Greased Surface Weight of Module
Typ.
--- --- 0.05 30
Max.
0.50 1.0 --- ---
Units
C/W
gm
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1
7/27/01
GA100NA60U
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) VGE(th)/TJ gfe ICES VFM IGES
Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
Min. 600 -- -- -- -- 3.0 -- 34 -- -- -- -- --
Typ. Max. Units -- -- V 0.36 -- V/C 1.49 2.1 1.80 -- V 1.47 -- -- 6.0 -7.6 -- mV/C 52 -- S -- 250 A -- 1.3 mA 1.3 1.6 V 1.16 1.3 -- 100 nA
Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1.0mA IC = 50A VGE = 15V IC = 100A See Fig. 1, 4 IC = 50A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 250A VCE = 100V, IC = 50A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C IC = 50A See Fig. 12 IC = 50A, TJ = 150C VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- --- --- --- --- --- --- --- --- --- --- --- --- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 430 48 130 57 80 240 120 0.41 2.51 2.92 57 80 380 170 4.78 2.0 7400 730 90 90 120 7.3 11 360 780 370 220 Max. Units Conditions 640 IC = 50A 72 nC VCC = 400V See Fig. 7 190 VGE = 15V --- TJ = 25C --- ns IC = 60A, VCC = 480V -- VGE = 15V, RG = 5.0 -- Energy losses include "tail" and --- diode reverse recovery. --- mJ 4.4 --- TJ = 150C, --- ns IC = 60A, VCC = 480V --- VGE = 15V, RG = 5.0 --- Energy losses include "tail" and --- mJ diode reverse recovery. -- nH -- VGE = 0V -- pF VCC = 30V See Fig. 6 -- = 1.0MHz 140 ns TJ = 25C See Fig. 180 TJ = 125C 13 IF = 50A 11 A TJ = 25C See Fig. 16 TJ = 125C 14 VR = 200V 550 nC T J = 25C See Fig. 1200 TJ = 125C 15 di/dt = 200As -- A/s TJ = 25C See Fig. -- TJ = 125C 16
Details of note through are on the page 7
2
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GA100NA60U
1000
1000
I C , Collector-to-Emitter Current (A)
TJ = 150 C
I C, Collector-to-Emitter Current (A)
TJ = 25 C
TJ = 150 C
100
100
TJ = 25 C
10
10
1 0.0
V GE = 15V 20s PULSE WIDTH
1.0 2.0 3.0 4.0 5.0
1 5.0
V CC = 50V 5s PULSE WIDTH
6.0 7.0 8.0 9.0
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
100
2.5
80
VCE , Collector-to-Emitter Voltage(V)
VGE = 15V 80 us PULSE WIDTH
Maximum DC Collector Current(A)
2.0
60
IC = 100 A
40
1.5
IC = 50 A IC = 25 A
20
0 25 50 75 100 125 150
1.0 -60 -40 -20
0
20
40
60
80 100 120 140 160
TC , Case Temperature ( C)
TJ , Junction Temperature ( C)
Fig. 3 - Maximum Collector Current vs. Case Temperature
Fig. 4 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
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GA100NA60U
1
Thermal Response (Z thJC )
D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
14000
12000
VGE , Gate-to-Emitter Voltage (V)
100
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
VCC = 400V I C = 50A
16
C, Capacitance (pF)
10000
Cies
8000
12
6000
8
4000
Coes
4
2000
Cres
1 10
0
0 0 100 200 300 400 500
VCE , Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 6 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 7 - Typical Gate Charge vs. Gate-to-Emitter Voltage
4
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GA100NA60U
10 VCC = 480V VGE = 15V 100 RG = 5.0 VGE = 15V VCC = 480V 10 IC = 120A IC = 60A IC = 30A 1
Total Switching Losses (mJ)
8
6
4
Total Switching Losses (mJ)
TJ = 25C I C = 60A
2 0 10 20 30 40 50
0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160
R G, Gate Resistance ( )
T J, Junction Temperature (C)
Fig. 8 - Typical Switching Losses vs. Gate Resistance
Fig. 9 - Typical Switching Losses vs. Junction Temperature
12 RG = 5.0 TJ = 150C VGE = 15V VCC = 480V 8
1000
VGE = 20V T J = 125 oC
10
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
100
6
4
10
2
0 20 40 60 80 100
SAFE OPERATING AREA
1 1 10 100 1000
IC , Collector Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 10 - Typical Switching Losses vs. Collector-to-Emitter Current
Fig. 11 - Turn-Off SOA
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GA100NA60U
1000
Instantaneous forward current - IF (A)
100
T J = 1 5 0 C T J = 1 2 5 C TJ =
10
25 C
1 0.0 0.4 0.8 1.2 1.6 2.0
F orwa rd V oltag e D ro p - V F M (V )
Fig. 12 - Typical Forward Voltage Drop vs. Instantaneous Forward Current
150 100
I F = 100A I F = 50A I F = 25A
120
I F = 100A I F = 50A I F = 25A
trr- (nC)
90
Irr- ( A)
10
60
30 V R = 2 00 V T J = 1 2 5C T J = 2 5 C 0 100 VR = 2 00 V T J = 1 2 5C T J = 2 5 C
di f /dt - (A / s)
1000
1 100
1000
di f /dt - (A/ s)
Fig. 13 - Typical Reverse Recovery vs. dif/dt
Fig. 14 - Typical Recovery Current vs. dif/dt
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GA100NA60U
4000 V R = 2 00 V T J = 1 2 5C T J = 2 5 C 10000 VR = 2 00 V T J = 1 2 5C T J = 2 5 C
I F = 100A
3000
IF = 100A I F = 50A
I F = 50A IF = 25A
di (rec) M/dt- (A /s)
I F = 25A
Qrr- (nC)
2000
1000
1000
0 100
di f /dt - (A / s)
1000
100 100
1000
di f /dt - (A/ s)
Fig. 15 - Typical Stored Charge vs. dif/dt
Fig. 16 - Typical di(rec)M/dt vs. dif/dt
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG= 5.0 (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot.
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GA100NA60U
Same ty pe device as D .U.T.
80% of Vce
430F D .U .T.
90%
Vge
VC
10% 90%
td(off)
Fig. 17a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
10% IC 5%
t d(on)
tr
tf t=5s E on E ts = (Eon +Eoff ) E off
Fig. 17b - Test Waveforms for Circuit of Fig. 17a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg
trr Ic
Q rr =
trr id ddt Ic t tx
tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic
1 0 % Irr V cc
V pk Irr
D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4
E re c =
Vc Ic dt
t4 V d id d t t3
t1
Fig. 17c - Test Waveforms for Circuit of Fig. 17a,
Defining Eon, td(on), tr
Fig. 17d - Test Waveforms for Circuit of Fig. 17a,
Defining Erec, trr, Qrr, Irr
8
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GA100NA60U
V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T .
V O L T A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 17e. Macro Waveforms for Figure 17a's Test Circuit
L 1000V 50V 6000 F 100 V Vc*
D.U.T.
RL= 0 - 480V
480V 4 X IC @25C
Figure 18. Clamped Inductive Load Test Circuit
Figure 19. Pulsed Collector Current Test Circuit
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GA100NA60U SOT-227 Package Details
Dimensions are shown in millimeters ( inches )
3 8 .3 0 ( 1.5 08 ) 3 7 .8 0 ( 1.4 88 ) -A 4 3 6.2 5 ( .24 6 ) 1 2.50 ( .4 92 ) 2 5 .7 0 ( 1.0 12 ) 2 5 .2 0 ( .9 9 2 ) -B 1 7 .50 ( .29 5 ) 3 0 .2 0 ( 1 .1 89 ) 2 9 .8 0 ( 1 .1 73 ) 4X 2 .1 0 ( .0 82 ) 1 .9 0 ( .0 75 ) 8.10 ( .3 19 ) 7.70 ( .3 03 ) 0 .25 ( .01 0 ) M C A M B M 2 .10 ( .08 2 ) 1 .90 ( .07 5 ) -C 0.1 2 ( .00 5 ) 12 .3 0 ( .4 84 ) 11 .8 0 ( .4 64 ) 2 R FULL 1 5.00 ( .5 90 ) 4 1 K1 A2 H E XF R E D G E IG B T A1 K2 3 2
4 .4 0 (.17 3 ) 4 .2 0 (.16 5 )
C HAM FER 2 .0 0 ( .0 7 9 ) X 45 7
L E A D A S S IG M E N T S E C 4 1 S G E,K G HEXFET
A S
C D
3 2
IGBT
Tube
QUANTITIES PER TUBE IS 10 M4 SCREW AND WASHER INCLUDED
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.7/01
10
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