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| an AMP ZE comDanv r = Wireless Bipolar Power Transistor, 1.6 - 1.7 GHz Features l l l l l 30W PHI 617-30 Designed for Linear Amplifier Applications -30 dBc Typ 3rd IMD at 30 Watts PEP Common Emitter Class AB Operation Internal Input Impedance Matching Diffused Emitter Ballasting -I .225?k010 (5.72i.25) r OTHERWISE ,400 Parameter Symbol Rating Units Collector-Base Voltage Collector-EmitterVoltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature StorageTemperature Thermal Resistance V CSC V CES V EBD `c pcl ? T STG 8JC 60 60 3.0 10 109 200 -55 to +150 1.6 V V V A w "C "C "CM, UNLESS NOTED, TOLERANCES ARE It+CHES tO'J5' cHILUHETERS tJ3nH, .225&O (5.72i.25) Electrical Characteristics Parameter at 25C Symbol Min Max Units Test Conditions Collector-Emitter ~olle%-Emitter Collector-Emitter Collector-Emitter Breakdown Voltaae Leakage Current Breakdown Voltage Breakdown Voltage I BV,,, LFP BV,,, BV,,, BV,,, I 60 20 30 3.0 15 10 40 ) 4.0 120 1 3.0:1 -28 V 1 mA V V V dB % 1 dB dBc I,=40 mA 1 V,,=25V I,=40 mA I,=40 mA, F&=220 I,=40 mA V,,=5 V,,=25 V, I,=2 A V, I,,=200 mA, P,,,=30 W PEP, F=l.6, 1.65,1.70 1.651.70 GHz GHz 1 R I Emitter-Base Breakdown Voltaae DC Forward Current Gain Power Gain Collector Efficiencv I Input Return Loss Load Mismatch Tolerance 3rd Order IMD 1 VP,=25 V, I,,=200 1 V-,=25 V,,=25 V,,=25 V, I,,=200 V, I,,=200 V, I,,=020 mA, P,,,,=30 W PEP, F=l.6, RL VSWR-T `MD, 1 10 - mA. P-,.,=30 W PEP, F=1.6, 1.65, 1.70GHz mA, P,,,=30 mA, P,,,=30 W PEP, F=l.6, W PEP, F=l650 1.65, 1.70 GHz MHz, 4F=lOO kHz Typical Optimum Device Impedances F(GHz) z,,w Z,,m(~) FZ- ' 04D 1.60 1.65 1.70 2.1 + j4.9 3.1 + j3.8 2.1 +j3.5 1.3-j0.7 1.2 - j0.8 1.2 - j0.9 Wireless Bipolar Power Transistor, 30W PH1617-30 v2.00 RF Test Fixture Rl I 150 AU cl INPUT -t,G 50 OHMS cu 159 200 ARTWORK DIMENSIDNS IN MILS PARTS Cl c2 c3 c4 c5 C6 CR1 Ql Rl R2 Ll BOARD TYPE: I-IS-l33 pF ATC SIZE A 6,8 UF 35 VDLTS CHIP 4,7 uF 35 VOLTS CHIP 50 UF 50 VOLTS lN4245 DIODE PH1617-30 5R l/4 WATT 2.2R l/8 WATT CHIP 10 T/NO. 24 AWG ON L/8' RDGERS 6010.5 25 DIAMETER MILS THICK, ER = 10.5 Wireless Bipolar Power Transistor, 30W PH1617-30 Typical Broadband Performance Curves GAIN-EFFICIENCY 13 vs FREQUENCY . 7s OUTPUT 40 . POWER vs COLLECTOR I,,=200 VOLTAGE P ouT=30 W V,,=25 V I,,=200 mA mA F=l650 MHz .z 11 - ,I Efficiency z .453 . co - 9 3.5 8 1.60 .T 25 1.65 1.70 012 14 16 18 20 22 24 26 FREQUENCY (GHr) COLLECTOR VOLTAGE (V) GAIN vs PoUT F=l650 C,, vs COLLECTOR F=l .O MHz VOLTAGE MHz V,,=25 V 14 - I,=300 mA 30 34 38 POUT 42 45 24 28 32 36 40 44 48 24 26 32 36 40 44 48 P&PEP) in dBm P&PEP) in dBm Specifications Subject to Change Without Notice. |
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