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RM912
CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz)
The RM912 dual mode Code Division Multiple Access (CDMA)/Advanced Mobile Phone Service (AMPS) Power Amplifier is a fully matched 6-pin LCC surface mount module designed for mobile units operating in the 824-849 MHz cellular bandwidth. This device meets stringent IS95 CDMA linearity requirements to beyond 28 dBm output power and can be driven to power output levels beyond 31 dBm for high efficiency FM mode operation. A single GaAs Microwave Monolithic Intergrated Circuit (MMIC) contains all active circuitry in the module. The MMIC contains on-board bias circuitry, as well as input and interstage matching circuits. The output match is realized off-chip within the module package to optimize efficiency and power performance into a 50 load. This device is manufactured with Conexant's GaAs HBT process that provides for all positive voltage DC supply operation while maintaining high efficiency and good linearity. Primary bias to the RM912 can be supplied directly from a three cell nickel-cadmium, single cell lithium-ion, or other suitable battery with output in the 3-4 volt range. Power down is accomplished by setting the voltage on the low current reference pin to zero volts. No external supply side switch is needed as typical "off" leakage is a few microamperes with full primary voltage supplied from the battery.
Distinguishing Features
* * * * * * * Low voltage positive bias supply Good linearity High efficiency Dual mode operation Large dynamic range 6-pin LCC package (6 x 6 x 1.5 mm) Power down control
Applications
* * * Digital cellular (CDMA) Analog cellular (AMPS) Wireless local loop
Functional Block Diagram
VREF (3)
VCC1 (1)
VCC2 (4)
Driver Stage Bias
Power Stage Bias
RF Input (2)
Input Match
DA
Inter Stage Match MMIC
PA
Output Match
RF Output (5)
MODULE
GND (6, 7)
GND (6, 7)
Data Sheet 2000, Conexant Systems, Inc. All Rights Reserved.
100635G August 2000
Electrical Specifications
RM912
CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz)
Electrical Specifications
The following tables list the electrical characteristics of the RM912 Power Amplifier. Table 1 lists the absolute maximum rating for continuous operation. Table 2 lists the recommended operating conditions for achieving the electrical performance listed in Table 3. Table 3 lists the electrical performance of the RM912 Power Amplifier over the recommended operating conditions.
Table 1. Absolute Maximum Ratings(1) Parameter
RF Input Power Supply Voltage Reference Voltage Case Operating Temperature Storage Temperature
NOTE(S):
(1)
Symbol
Pin Vcc Vref Tc Tstg
Min
-- -- -- -30 -55
Nominal
3.0 3.4 3.0 25 --
Max
6.0 5.0 3.3 +110 +125
Unit
dBm Volts Volts C C
No damage assuming only one parameter is set at limit at a time with all other parameters set at or below nominal value.
Table 2. Recommended Operating Conditions Parameter
Supply Voltage Reference Voltage Operating Frequency Operating Temperature
Symbol
Vcc Vref Fo To
Min
3.2 2.9 824.0 -30
Nominal
3.4 3.0 836.5 +25
Max
4.2 3.1 849.0 +85
Unit
Volts Volts MHz C
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Conexant
100635G
RM912
CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz)
Electrical Specifications
Table 3. Electrical Specifications for CDMA / AMPS Nominal Operating Conditions(1) Characteristics
Quiescent current
Condition
Vref = 3.0 Vref = 2.9
Symbol
Iq Iq G Gp G Gp
Min
-- -- 26.0 27.0 26.0 26.0
Typical
100.0 80.0 28.0 29.0 28.0 28.0
Max
-- -- -- -- -- --
Unit
mA mA dB dB dB dB
Gain-Digital
Po = 0 dBm Po = 28 dBm
Gain-Analog
Po = 0 dBm Po = 31 dBm
Power Added Efficiency - Analog Mode - Digital Mode Adjacent Channel Power (2) - 885 kHz Offset -1980 kHz Offset Harmonic Suppression - Second - Third Noise Power in RX Band 869-894 MHz Noise Figure Input Voltage Standing Wave Ratio Stability (Spurious output) Ruggedness - No damage
NOTE(S):
(1) (2)
Po = 31 dBm Po = 28 dBm
PAEa PAEd
43.0 32.0
45.0 34.0
-- --
% %
Po 28 dBm Po 28 dBm
ACP1 ACP2
-- --
-50.0 -58.0
-48.0 -56.0
dBc dBc
Po 31 dBm Po 31 dBm Po @ 28 dBm -- -- 5:1 VSWR All phases Po 31 dBm
AFo2 AFo3 RxBN NF VSWR S Ru
-- -- -- -- -- -- 10:1
-42.0 -45.0 -134.0 6.0 1.4:1 -- --
-30.0 -30.0 -133.0 -- -- -60.0 --
dBc dBc dBm/Hz dB -- dBc VSWR
Vcc = +3.4 V, Vref = +3.0 V, Freq = 836.5 MHz, Tc = 25 C, unless otherwise specified. ACP is specified per IS95 as the ratio of the total in-band power (1.23 MHz BW) to adjacent power in a 30 kHz BW.
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Electrical Specifications
RM912
CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz)
Table 4. Electrical Specifications Limits for CDMA / AMPS Recommended Operating Conditions(1) Characteristics
Quiescent current Gain-Digital
Condition
Vref = 3.0 Po = 0 dBm Po = 28 dBm
Symbol
Iq G Gp G Gp
Min
-- 25.0 25.0 25.0 24.0
Max
140.0 29.0 32.0 29.0 32.0
Unit
mA dB dB dB dB
Gain-Analog
Po = 0 dBm Po = 31dBm
Power Added Efficiency - Analog Mode - Digital Mode Adjacent Channel Power(2) - 885 kHz Offset -1980 kHz Offset Harmonic Suppression - Second - Third Noise Power in RX Band 869--894 MHz Input Voltage Standing Wave Ratio
NOTE(S):
(1) (2)
Po = 31 dBm Po = 28 dBm
PAEa PAEd
42.0 32.0
-- --
% %
Po 28 dBm Po 28 dBm
ACP1 ACP2
-- --
-44.0 -56.0
dBc dBc
Po 31 dBm Po 31 dBm Po @ 28 dBm --
AFo2 AFo3 RxBN VSWR
-- -- -- --
-40.0 -40.0 -131.0 2:1
dBc dBc dBm/Hz --
Per Table 2. ACP is specified per IS95 as the ratio of the total in-band power (1.23 MHz BW) to adjacent power in a 30 kHz BW.
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Conexant
100635G
RM912
CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz)
Characterization Data
Characterization Data
The following charts illustrate the characteristics of a typical RM912 Power Amplifier tested in the evaluation board described in the following section. The amplifier was selected by characterizing a group of devices and choosing a part with average electrical performance at both nominal and worst case (limit) conditions. Figures 1 through 4 illustrate the digital signal characteristics and Figures 5 through 8 illustrate the analog characteristics of the RM912.
Figure 1. Digital Gain vs. Output Power
Vref = 3.0V, Vcc = 3.4V 32.50
30.00
Gain (dB)
27.50
25.00
22.50 0.00
5.00
10.00
15.00 Output Power (dBm)
20.00
25.00
30.00
Legend
N I L 824 MHz @ -30 C 837 MHz @ -30 C 849 MHz @ -30 C N I L 824 MHz @ +25 C 837 MHz @ +25 C 849 MHz @ +25 C N I L 824 MHz @ +85 C 837 MHz @ +85 C 849 MHz @ +85 C
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Characterization Data
RM912
CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz)
Figure 2. Digital Adjacent Channel Power Magnitude (ACP1) vs. Output Power
Vref = 3.0V, Vcc = 3.4V, 885 kHz Of fset 80.00
70.00 60.00
| ACP1 (dBc) |
50.00
40.00 30.00
20.00 0.00
5.00
10.00
15.00 Output Pow er (dBm )
20.00
25.00
30.00
Figure 3. Digital Adjacent Channel Power Magnitude (ACP2) vs. Output Power
Vref = 3.0V, Vcc = 3.4V, 1980 kHz Offset 80.00
70.00 60.00
| ACP2 (dBc) |
50.00
40.00 30.00
20.00 0.00
5.00
10.00
15.00 Output Pow er (dBm )
20.00
25.00
30.00
Legend
N I L 824 MHz @ -30 C 837 MHz @ -30 C 849 MHz @ -30 C N I L 824 MHz @ +25 C 837 MHz @ +25 C 849 MHz @ +25 C N I L 824 MHz @ +85 C 837 MHz @ +85 C 849 MHz @ +85 C
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RM912
CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz)
Figure 4. Digital Power Added Efficiency vs. Output Power
Characterization Data
Vref = 3.0V, Vcc = 3.4V 40.00 35.00 30.00 25.00 DPAE (%) 20.00 15.00 10.00 5.00 0.00 0.00
5.00
10.00
15.00 Output Power (dBm)
20.00
25.00
30.00
Figure 5. Analog Gain vs. Output Power
Vref = 3.0V, Vcc = 3.4V 32.50
30.00
Gain (dB)
27.50
25.00
22.50 0.00
5.00
10.00
15.00 20.00 Output Pow er (dBm)
25.00
30.00
Legend
N I L 824 MHz @ -30 C 837 MHz @ -30 C 849 MHz @ -30 C N I L 824 MHz @ +25 C 837 MHz @ +25 C 849 MHz @ +25 C N I L 824 MHz @ +85 C 837 MHz @ +85 C 849 MHz @ +85 C
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Characterization Data
RM912
CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz)
Figure 6. Analog Power Added Efficiency vs. Output Power
Vref = 3.0V, Vcc = 3.4V 50.00 45.00 40.00 35.00 30.00 PAE (%) 25.00 20.00 15.00 10.00 5.00 0.00 0.00
5.00
10.00
15.00 20.00 Output Power (dBm)
25.00
30.00
Figure 7. Analog Second Order Harmonic Suppression Magnitude
Vref = 3.0V, Vcc = 3.4V 70.00 60.00 | AFo2 (dBc) | 50.00 40.00 30.00 20.00 10.00 0.00 10.00
15.00
20.00 Output Pow er (dBm )
25.00
30.00
Legend
N I L 824 MHz @ -30 C 837 MHz @ -30 C 849 MHz @ -30 C N I L 824 MHz @ +25 C 837 MHz @ +25 C 849 MHz @ +25 C N I L 824 MHz @ +85 C 837 MHz @ +85 C 849 MHz @ +85 C
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RM912
CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz)
Figure 8. Analog Third Order Harmonic Suppression Magnitude
Characterization Data
Vref = 3.0V, Vcc = 3.4V 70.00 60.00 50.00 | AFo3 (dBc) | 40.00 30.00 20.00 10.00 0.00 10.00
15.00
20.00 Output Pow er (dBm )
25.00
30.00
Legend
N I L 824 MHz @ -30 C 837 MHz @ -30 C 849 MHz @ -30 C N I L 824 MHz @ +25 C 837 MHz @ +25 C 849 MHz @ +25 C N I L 824 MHz @ +85 C 837 MHz @ +85 C 849 MHz @ +85 C
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Characterization Data
RM912
CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz)
Figure 9. Digital Gain vs. Output Power
40.00
Digital Gain at 28 dBm output power (dB)
COL D 35.00
R OOM T EMP ER AT UR E
HOT
824 MHz
836.5 MHz
849 MHz
30.00
25.00
20.00
15.00
10.00
5.00
0.00 3.20V - 30C 3.40V -30C 4.20V - 30C 3.20V 25C 3.40V 25C Col l ect or Vol t age Cas e T emper at u r e 4.20V 25C 3.20V 85C 3.40V 85C 4.20V 85C
Figure 10. Digital Adjacent Channel Power Magnitude (ACP1) vs. Output Power
70.00
| ACP1 at 28 dBm Output Power (dBc) |
COL D 60.00
R OOM T EMP ER AT UR E
HOT
824 MHz
836.5 MHz
849 MHz
50.00
40.00
30.00
20.00
10.00
0.00 3.20V - 30C 3.40V -30C 4.20V - 30C 3.20V 25C 3.40V 25C 4.20V 25C 3.20V 85C 3.40V 85C 4.20V 85C
C o l l ect o r V o l t ag e C as e T emper at ur e
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Conexant
100635G
RM912
CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz)
Figure 11. Digital Adjacent Channel Power Magnitude (ACP2) vs. Output Power
Characterization Data
80.00
| ACP2 at 28 dBm Output Power (dBc) |
COL D 70.00
R OOM T EMP ER AT UR E
HOT
824 MHz
836.5 MHz
849 MHz
60.00
50.00
40.00
30.00
20.00
10.00
0.00 3.20V - 30C 3.40V -30C 4.20V - 30C 3.20V 25C 3.40V 25C 4.20V 25C 3.20V 85C 3.40V 85C 4.20V 85C
Co l l ect o r V o l t ag e C as e T emp er at ur e
Figure 12. Analog Gain vs. Output Power
Analog Gain at 31 dBm Output Power (dB)
40.00 COL D 35.00 R OOM T EMP ERAT URE HOT
824 MHz
836.5 MHz
849 MHz
30.00
25.00
20.00
15.00
10.00
5.00
0.00 3.20V - 30C 3.40V - 30C 4.20V - 30C 3.20V 25C 3.40V 25C 4.20V 25C 3.20V 85C 3.40V 85C 4.20V 85C
Co l l ect or V ol t age Cas e T emper at ur e
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Characterization Data
RM912
CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz)
Figure 13. Analog Second Order Harmonic Suppression Magnitude
70.00
| AFo2 at 31 dBm Output Power (dBc) |
COL D 60.00
R OOM T EMP ER AT UR E
HOT
824 MHz
50.00
836.5 MHz
849 MHz
40.00
30.00
20.00
10.00
0.00 3.20V - 30C 3.40V - 30C 4.20V - 30C 3.20V 25C 3.40V 25C 4.20V 25C 3.20V 85C 3.40V 85C 4.20V 85C
C o l l ect o r V o l t age C as e T emper at ur e
Figure 14. Analog Third Order Harmonic Suppression Magnitude
| AFo3 at 31 dBm Output Power (dBc) |
70.00 COLD 60.00 ROO T E MPE RAT URE M HOT
824 MHz
836.5 MHz
849 MHz
50.00
40.00
30.00
20.00
10.00
0.00
3.20V -30C
3.40V - 30C
4.20V -30C
3.20V 25C
3.40V 25C
Col l ect or V ol t age Cas e T emper at ur e
4.20V 25C
3.20V 85C
3.40V 85C
4.20V 85C
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RM912
CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz)
Figure 15. Noise Figure Variation Over Recommended Operating Conditions
Characterization Data
10.00 COL D 9.00 ROOM T EMP ER AT UR E HOT
824 MHz
8.00
836.5 MHz
849 MHz
Noise Figure (dB)
7.00 6.00 5.00 4.00 3.00 2.00 1.00 0.00 3.20V -30C 3.40V -30C 4.20V -30C 3.20V 25C 3.40V 25C 4.20V 25C 3.20V 85C 3.40V 85C 4.20V 85C
Col l ect o r V ol t age Cas e T emper at ur e
Figure 16. Voltage Standing Wave Ratio Variation Over Recommended Operating Conditions
2.00 COL D 1.80 ROOM T EMP ERAT UR E HOT
824 MHz
1.60 1.40
836.5 MHz
849 MHz
VSWR (:1)
1.20 1.00 0.80 0.60 0.40 0.20 0.00 3.20V - 30C 3.40V - 30C 4.20V - 30C 3.20V 25C 3.40V 25C 4.20V 25C 3.20V 85C 3.40V 85C 4.20V 85C
Co l l ect o r V o l t age Cas e T emper at ur e
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Evaluation Board Description
RM912
CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz)
Evaluation Board Description
The evaluation board is a platform for testing and interfacing design circuitry. To accommodate the interface testing of the RM912, the evaluation board schematic and diagrams are included for preliminary analysis and design. Figure 17 shows the basic schematic of the board for the 824 MHz to 849 MHz range. Figure 18 illustrates the board layout.
Figure 17. Evaluation Board Schematic
1 C1
VCC1
GND 6
RFIN
2
RFIN
RFOUT 5
RFOUT
3
VREF
VCC2 4 C2 C3 C4
Vref
Vcc
100635_003
Figure 18. Evaluation Board Assembly Diagram
REF DESIGNATIONS C1 C2 C3 C4
VALUES 100 pF 4.7 uF 39 pF 1000 pF
QTY 1 1 1 1
100635_004
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Conexant
100635G
RM912
CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz)
Package Dimensions and Pin Descriptions
Package Dimensions and Pin Descriptions
The RM912 is a multi-layer laminate base, overmold encapsulated modular package designed for surface mount solder attachment to a printed circuit board.
Figure 19. RM912 Package Drawing
PIN 1
PIN 6
PIN 2
PIN 5
5.92/6.15 [.2333/.242]
PIN 3
PIN 4
5.92/6.15 [.2333/.242] 1.500 [.060] TYP
2.870 [.113] (2x) 1.981 [.078] (2x) 1.219 [.048] (2x) 2.006 [.079 (4X) PIN 7 2.500 [.0098] (4x) 2.500 [.0098] (4x)
2.870 [.113] (4x) 1.854 [.073] (6x) 1.245 [.049] (2x)
1.016 [.040]
.762 [.030] 6x
(PIN 1)
COPPER BOTTOM
R .500 TYP [R .020 TYP]
SOLDER MASK BOTTOM
100635_002
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Package Dimensions and Pin Descriptions
RM912
CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz)
Table 5. Pin Description Pin #
1 2 3 4 5 6 7
NOTE(S):
(1) (2)
Function
VCC1(1) RF Input VREF VCC2(1) RF Output GND GND(2)
All supply pins may be connected together at the supply. Package underside is GND.
Figure 20. Typical Case Markings
Mark Pin 1 Identifier
CONEXANT
RM912-11 NXXXXX.XX YYWW MEX
Manufacturing Part Number - Revision Lot Number
YY = Manufacture Year WW = Week Package Sealed MEX = Country Code
100635_006
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Conexant
100635G
RM912
CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz)
Package Dimensions and Pin Descriptions
Production quantities of this product are shipped in the standard tape-and-reel format illustrated below.
Figure 21. 6 x 6 Tape and Reel
8.00 .10
4.00 .10
1.50 .10 1.75 .10
PIN 1
5.50 .10 12.00
+.30 -.10
0.292 .02
1.50 .25
8 MAX 6.35 .10
1.59 .10
7 MAX
6.35 .10 A 0 K 0 B 0
3M Carrier Tape
100635_005
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Electrostatic Discharge Sensitivity
RM912
CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz)
Electrostatic Discharge Sensitivity
The RM912 is a Class I device. Figure 22 lists the Electrostatic Discharge (ESD) immunity level for each pin of the RM912 product. The numbers in Figure 22 specify the ESD threshold level for each pin where the I-V curve between the pin and ground starts to show degradation. The ESD testing was performed in compliance with MIL-STD-883E Method 3015.7 using the Human Body Model. Since 2000 volts represents the maximum measurement limit of the test equipment used, pins marked > 2000 V pass 2000V ESD stress.
Figure 22. ESD Sensitivity Areas
> +1950 V < -2000 V VCC1
1
6
GND
> +2000 V < -2000 V RF IN
2
RM912-14P N14716.6 0015 Mexico
5
> +2000 V RF OUT < -2000 V
> +2000 V VREF < -2000 V
3
4
VCC2
> +1400 V < -2000 V
100635_007
Various failure criteria can be utilized when performing ESD testing. Many vendors employ relaxed ESD failure standards which fail devices only after "the pin fails the electrical specification limits" or "the pin becomes completely non-functional". Conexant employs most stringent criteria, fails devices as soon as the pin begins to show any degradation on a curve tracer. To avoid ESD damage, latent or visible, it is very important the Class-1 ESD handling precautions listed in Table 6 be used in the product assembly and test areas follow.
Table 6. Precautions for GaAs ICs with ESD Thresholds Greater Than 200V But Less Than 2000V
Personnel Grounding Wrist Straps Conductive Smocks, Gloves and Finger Cots Antistatic ID Badges Protective Workstation Dissipative Table Tops Protective Test Equipment (Properly Grounded) Grounded Tip Soldering Irons Conductive Solder Suckers Static Sensors Facility Relative Humidity Control and Air Ionizers Dissipative Floors (less than 109 to GND) Protective Packaging & Transportation Bags and Pouches (Faraday Shield) Protective Tote Boxes (Conductive Static Shielding) Protective Trays Grounded Carts Protective Work Order Holders
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Ordering Information
Model Number -- Manufacturing Part Number RM912 Product Revision -14 Package 6x6LM-6 Operating Temperature -30 C to +85 C
Revision History
Revision A B C D E F G Level Date March 2000 March 2000 June 2000 July 2000 July 2000 August 2000 August 2000 Description Preliminary Information Updated Preliminary Information Added Characterization Data, Released Updated ESD Data Preprint Update Web Site Update Web Format Corrections
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0.0 Sales Offices
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