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1N5221B Series 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators This is a complete series of 500 mW Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial-lead hermetically sealed glass package that offers protection in all common environmental conditions. Specification Features: http://onsemi.com Cathode Anode * Zener Voltage Range - 2.4 V to 91 V * ESD Rating of Class 3 (>16 KV) per Human Body Model * DO-204AH (DO-35) Package - Smaller than Conventional * Double Slug Type Construction * Metallurgical Bonded Construction Mechanical Characteristics: CASE: Double slug type, hermetically sealed glass FINISH: All external surfaces are corrosion resistant and leads are DO-204AA Package AXIAL LEAD CASE 299 GLASS MARKING DIAGRAM L 1N 52 xxB YWW readily solderable MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230C, 1/16 from the case for 10 seconds POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any MAXIMUM RATINGS (Note 1.) Rating Max. Steady State Power Dissipation @ TL 75C, Lead Length = 3/8 Derate above 75C Operating and Storage Temperature Range Symbol PD Value 500 4.0 TJ, Tstg -65 to +200 Unit mW mW/C C L = Assembly Location 1N52xxB = Device Code = (See Table Next Page) Y = Year WW = Work Week ORDERING INFORMATION Device 1N52xxB 1N52xxBRL 1N52xxBRL2 * 1N52xxBRA1 1N52xxBTA 1N52xxBTA2 * 1N52xxBRR1 { 1N52xxBRR2 } Package Axial Lead Axial Lead Axial Lead Axial Lead Axial Lead Axial Lead Axial Lead Axial Lead Shipping 3000 Units/Box 5000/Tape & Reel 5000/Tape & Reel 3000/Ammo Pack 5000/Ammo Pack 5000/Ammo Pack 3000/Tape & Reel 3000/Tape & Reel 1. Some part number series have lower JEDEC registered ratings. * The "2" suffix refers to 26 mm tape spacing. { Polarity band up with cathode lead off first } Polarity band down with cathode lead off first Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2001 1 May, 2001 - Rev. 2 Publication Order Number: 1N5221B/D 1N5221B Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, Based on dc measurements at thermal equilibrium; lead length = 3/8; thermal resistance of heat sink = 30C/W, VF = 1.1 V Max @ IF = 200 mA for all types) Symbol VZ IZT ZZT IZK ZZK IR VR IF VF qVZ Parameter Reverse Zener Voltage @ IZT Reverse Current Maximum Zener Impedance @ IZT Reverse Current Maximum Zener Impedance @ IZK Reverse Leakage Current @ VR Breakdown Voltage Forward Current Forward Voltage @ IF Maximum Zener Voltage Temperature Coefficient VZ VR IR VF IZT V IF I Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, Based on dc measurements at thermal equilibrium; lead length = 3/8; thermal resistance of heat sink = 30C/W, VF = 1.1 V Max @ IF = 200 mA for all types) Zener Voltage (Note 3.) Device (Note 2.) 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B Device Marking 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B VZ (Volts) Min 2.28 2.375 2.565 2.66 2.85 Nom 2.4 2.5 2.7 2.8 3.0 Max 2.52 2.625 2.835 2.94 3.15 @ IZT mA 20 20 20 20 20 Zener Impedance (Note 4.) ZZT @ IZT W 30 30 30 30 29 ZZK @ IZK W 1200 1250 1300 1400 1600 mA 0.25 0.25 0.25 0.25 0.25 A 100 100 75 75 50 Leakage Current IR @ VR Volts 1 1 1 1 1 qVZ (Note 5.) %/5C -0.085 -0.085 -0.08 -0.08 -0.075 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B 3.14 3.42 3.71 4.09 4.47 4.85 5.32 5.7 5.89 6.46 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 3.46 3.78 4.09 4.51 4.93 5.35 5.88 6.3 6.51 7.14 20 20 20 20 20 20 20 20 20 20 28 24 23 22 19 17 11 7 7 5 1600 1700 1900 2000 1900 1600 1600 1600 1000 750 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 25 15 10 5 5 5 5 5 5 3 1 1 1 1 2 2 3 3.5 4 5 -0.07 -0.065 -0.06 0.055 0.03 +0.03 0.038 0.038 0.045 0.05 2. TOLERANCE The JEDEC type numbers shown indicate a tolerance of 5%. 3. ZENER VOLTAGE (VZ) MEASUREMENT The zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30C 1C and 3/8 lead length. 4. ZENER IMPEDANCE (ZZ) DERIVATION ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current applied. The specified limits are for I Z(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz. 5. TEMPERATURE COEFFICIENT (qVZ) * Test conditions for temperature coefficient are as follows: A. IZT = 7.5 mA, T1 = 25C, T2 = 125C (1N5221B through 1N5242B) B. IZT = Rated IZT, T1 = 25C, T2 = 125C (1N5243B through 1N5281B) Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperature. * For more information on special selections contact your nearest ON Semiconductor representative. http://onsemi.com 2 1N5221B Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, Based on dc measurements at thermal equilibrium; lead length = 3/8; thermal resistance of heat sink = 30C/W, VF = 1.1 V Max @ IF = 200 mA for all types) (continued) Zener Voltage (Note 7.) Device (Note 6.) 1N5236B 1N5237B 1N5238B 1N5239B 1N5240B 1N5241B 1N5242B 1N5243B 1N5244B 1N5245B Device Marking 1N5236B 1N5237B 1N5238B 1N5239B 1N5240B 1N5241B 1N5242B 1N5243B 1N5244B 1N5245B VZ (Volts) Min 7.13 7.79 8.265 8.65 9.5 10.45 11.4 12.35 13.3 14.25 Nom 7.5 8.2 8.7 9.1 10 11 12 13 14 15 Max 7.87 8.61 9.135 9.55 10.5 11.55 12.6 13.65 14.7 15.75 @ IZT mA 20 20 20 20 20 20 20 9.5 9 8.5 Zener Impedance (Note 8.) ZZT @ IZT W 6 8 8 10 17 22 30 13 15 16 ZZK @ IZK W 500 500 600 600 600 600 600 600 600 600 mA 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 A 3 3 3 3 3 2 1 0.5 0.1 0.1 Leakage Current IR @ VR Volts 6 6.5 6.5 7 8 8.4 9.1 9.9 10 11 qVZ (Note 9.) %/5C 0.058 0.062 0.065 0.068 0.075 0.076 0.077 0.079 0.082 0.082 1N5246B 1N5247B 1N5248B 1N5249B 1N5250B 1N5251B 1N5252B 1N5253B 1N5254B 1N5255B 1N5256B 1N5257B 1N5258B 1N5259B 1N5260B 1N5261B 1N5262B 1N5263B 1N5264B 1N5265B 1N5266B 1N5267B 1N5268B 1N5269B 1N5270B 1N5246B 1N5247B 1N5248B 1N5249B 1N5250B 1N5251B 1N5252B 1N5253B 1N5254B 1N5255B 1N5256B 1N5257B 1N5258B 1N5259B 1N5260B 1N5261B 1N5262B 1N5263B 1N5264B 1N5265B 1N5266B 1N5267B 1N5268B 1N5269B 1N5270B 15.2 16.15 17.1 18.05 19 20.9 22.8 23.75 25.65 26.6 28.5 31.35 34.2 37.05 40.85 44.65 48.45 53.2 57 58.9 64.6 71.25 77.9 82.65 86.45 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 56 60 62 68 75 82 87 91 16.8 17.85 18.9 19.95 21 23.1 25.2 26.25 28.35 29.4 31.5 34.65 37.8 40.95 45.15 49.35 53.55 58.8 63 65.1 71.4 78.75 86.1 91.35 95.55 7.8 7.4 7 6.6 6.2 5.6 5.2 5.0 4.6 4.5 4.2 3.8 3.4 3.2 3.0 2.7 2.5 2.2 2.1 2.0 1.8 1.7 1.5 1.4 1.4 17 19 21 23 25 29 33 35 41 44 49 58 70 80 93 105 125 150 170 185 230 270 330 370 400 600 600 600 600 600 600 600 600 600 600 600 700 700 800 900 1000 1100 1300 1400 1400 1600 1700 2000 2200 2300 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 12 13 14 14 15 17 18 19 21 21 23 25 27 30 33 36 39 43 46 47 52 56 62 68 69 0.083 0.084 0.085 0.086 0.086 0.087 0.088 0.089 0.090 0.091 0.091 0.092 0.093 0.094 0.095 0.095 0.096 0.096 0.097 0.097 0.097 0.098 0.098 0.099 0.099 6. TOLERANCE The JEDEC type numbers shown indicate a tolerance of 5%. 7. ZENER VOLTAGE (VZ) MEASUREMENT The zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30C 1C and 3/8 lead length. 8. ZENER IMPEDANCE (ZZ) DERIVATION ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current applied. The specified limits are for I Z(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz. 9. TEMPERATURE COEFFICIENT (qVZ) * Test conditions for temperature coefficient are as follows: A. IZT = 7.5 mA, T1 = 25C, T2 = 125C (1N5221B through 1N5242B) B. IZT = Rated IZT, T1 = 25C, T2 = 125C (1N5243B through 1N5281B) Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperature. * For more information on special selections contact your nearest ON Semiconductor representative. http://onsemi.com 3 1N5221B Series 0.7 PD, STEADY STATE POWER DISSIPATION (WATTS) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 180 200 HEAT SINKS 3/8" 3/8" TL, LEAD TEMPERATURE (C) Figure 1. Steady State Power Derating http://onsemi.com 4 1N5221B Series JL , JUNCTION TO LEAD THERMAL RESISTANCE (C/W) APPLICATION NOTE -- ZENER VOLTAGE Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, TL, should be determined from: TL = LAPD + TA. 500 400 L L 300 200 100 0 2.4-60 V 62-200 V LA is the lead-to-ambient thermal resistance (C/W) and PD is the power dissipation. The value for LA will vary and depends on the device mounting method. LA is generally 30 to 40C/W for the various clips and tie points in common use and for printed circuit board wiring. The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: TJ = TL + TJL. 0 0.2 0.4 0.6 0.8 1 L, LEAD LENGTH TO HEAT SINK (INCH) Figure 2. Typical Thermal Resistance 1000 7000 5000 2000 1000 700 500 200 100 70 50 20 10 7 5 2 1 0.7 0.5 0.2 0.1 0.07 0.05 0.02 0.01 0.007 0.005 0.002 0.001 3 4 5 6 7 8 9 10 11 12 13 14 15 +25C TYPICAL LEAKAGE CURRENT AT 80% OF NOMINAL BREAKDOWN VOLTAGE TJL is the increase in junction temperature above the lead temperature and may be found from Figure 2 for dc power: TJL = JLPD. V = VZTJ. VZ, the zener voltage temperature coefficient, is found from Figures 4 and 5. Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Surge limitations are given in Figure 7. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots, resulting in device degradation should the limits of Figure 7 be exceeded. I R , LEAKAGE CURRENT ( A) For worst-case design, using expected limits of IZ, limits of PD and the extremes of TJ(TJ) may be estimated. Changes in voltage, VZ, can then be found from: +125C VZ, NOMINAL ZENER VOLTAGE (VOLTS) Figure 3. Typical Leakage Current http://onsemi.com 5 1N5221B Series TEMPERATURE COEFFICIENTS (-55C to +150C temperature range; 90% of the units are in the ranges indicated.) VZ , TEMPERATURE COEFFICIENT (mV/ C) VZ , TEMPERATURE COEFFICIENT (mV/ C) +12 +10 +8 +6 +4 +2 0 -2 -4 2 3 4 5 6 7 8 9 VZ, ZENER VOLTAGE (VOLTS) 10 11 12 RANGE VZ @ IZT (NOTE 2) 100 70 50 30 20 10 7 5 3 2 1 10 20 30 50 VZ, ZENER VOLTAGE (VOLTS) 70 100 RANGE VZ @ IZ (NOTE 2) Figure 4a. Range for Units to 12 Volts Figure 4b. Range for Units 12 to 100 Volts VZ , TEMPERATURE COEFFICIENT (mV/ C) VZ , TEMPERATURE COEFFICIENT (mV/ C) 200 180 160 140 120 100 VZ @ IZT (NOTE 2) 120 130 140 150 160 170 180 190 200 +6 +4 +2 0 -2 -4 VZ @ IZ TA = 25C 20 mA 0.01 mA 1 mA NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS NOTE: CHANGES IN ZENER CURRENT DO NOT NOTE: AFFECT TEMPERATURE COEFFICIENTS 3 4 5 6 7 8 VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS) Figure 4c. Range for Units 120 to 200 Volts Figure 5. Effect of Zener Current 1000 500 C, CAPACITANCE (pF) 200 100 50 20 10 5 2 1 1 2 5 10 20 50% OF VZ BIAS 0 V BIAS TA = 25C 100 70 50 C, CAPACITANCE (pF) 30 20 10 7 5 3 2 1 TA = 25C 0 BIAS 1 V BIAS 1 VOLT BIAS 50% OF VZ BIAS 50 100 120 140 160 180 190 200 220 VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS) Figure 6a. Typical Capacitance 2.4-100 Volts Figure 6b. Typical Capacitance 120-200 Volts http://onsemi.com 6 1N5221B Series 100 70 50 30 20 10 7 5 3 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 10% DUTY CYCLE 20% DUTY CYCLE 5% DUTY CYCLE RECTANGULAR WAVEFORM TJ = 25C PRIOR TO INITIAL PULSE Ppk , PEAK SURGE POWER (WATTS) 11 V-91 V NONREPETITIVE 1.8 V-10 V NONREPETITIVE PW, PULSE WIDTH (ms) Figure 7a. Maximum Surge Power 1.8-91 Volts Ppk , PEAK SURGE POWER (WATTS) ZZ , DYNAMIC IMPEDANCE (OHMS) 1000 700 500 300 200 100 70 50 30 20 10 7 5 3 2 1 0.01 1000 500 RECTANGULAR WAVEFORM, TJ = 25C 200 100 50 20 10 5 2 1 0.1 0.2 0.5 VZ = 2.7 V 47 V 27 V TJ = 25C iZ(rms) = 0.1 IZ(dc) f = 60 Hz 100-200 VOLTS NONREPETITIVE 6.2 V 0.1 1 10 100 1000 1 2 5 10 20 50 100 PW, PULSE WIDTH (ms) IZ, ZENER CURRENT (mA) Figure 7b. Maximum Surge Power DO-204AH 100-200 Volts Figure 8. Effect of Zener Current on Zener Impedance ZZ , DYNAMIC IMPEDANCE (OHMS) 1000 700 500 200 100 70 50 20 10 7 5 2 1 1 2 3 5 7 10 IZ = 1 mA 5 mA 20 mA I F , FORWARD CURRENT (mA) TJ = 25C iZ(rms) = 0.1 IZ(dc) f = 60 Hz 1000 500 200 100 50 20 10 5 150C 2 1 75C MAXIMUM MINIMUM 25C 0C 20 30 50 70 100 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 VZ, ZENER VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS) Figure 9. Effect of Zener Voltage on Zener Impedance Figure 10. Typical Forward Characteristics http://onsemi.com 7 1N5221B Series 20 10 TA = 25 I Z , ZENER CURRENT (mA) 1 0.1 0.01 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 VZ, ZENER VOLTAGE (VOLTS) Figure 11. Zener Voltage versus Zener Current -- VZ = 1 thru 16 Volts 10 TA = 25 I Z , ZENER CURRENT (mA) 1 0.1 0.01 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 VZ, ZENER VOLTAGE (VOLTS) Figure 12. Zener Voltage versus Zener Current -- VZ = 15 thru 30 Volts http://onsemi.com 8 1N5221B Series 10 TA = 25 I Z , ZENER CURRENT (mA) 1 0.1 0.01 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 VZ, ZENER VOLTAGE (VOLTS) Figure 13. Zener Voltage versus Zener Current -- VZ = 30 thru 105 Volts 10 I Z , ZENER CURRENT (mA) 1 0.1 0.01 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260 VZ, ZENER VOLTAGE (VOLTS) Figure 14. Zener Voltage versus Zener Current -- VZ = 110 thru 220 Volts http://onsemi.com 9 1N5221B Series OUTLINE DIMENSIONS Zener Voltage Regulators - Axial Leaded 500 mW DO-35 Glass GLASS DO-35/D0-204AH CASE 299-02 ISSUE A B K F D A F K NOTES: 1. PACKAGE CONTOUR OPTIONAL WITHIN A AND B HEAT SLUGS, IF ANY, SHALL BE INCLUDED WITHIN THIS CYLINDER, BUT NOT SUBJECT TO THE MINIMUM LIMIT OF B. 2. LEAD DIAMETER NOT CONTROLLED IN ZONE F TO ALLOW FOR FLASH, LEAD FINISH BUILDUP AND MINOR IRREGULARITIES OTHER THAN HEAT SLUGS. 3. POLARITY DENOTED BY CATHODE BAND. 4. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. DIM A B D F K MILLIMETERS MIN MAX 3.05 5.08 1.52 2.29 0.46 0.56 --1.27 25.40 38.10 INCHES MIN MAX 0.120 0.200 0.060 0.090 0.018 0.022 --0.050 1.000 1.500 All JEDEC dimensions and notes apply. http://onsemi.com 10 1N5221B Series Notes http://onsemi.com 11 1N5221B Series ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (Mon-Fri 2:30pm to 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (Mon-Fri 2:00pm to 7:00pm CET) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (Mon-Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com Toll-Free from Mexico: Dial 01-800-288-2872 for Access - then Dial 866-297-9322 ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 1-303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 12 1N5221B/D |
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