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REVISIONS LTR A B C DESCRIPTION Made changes in accordance with N.O.R. 5962-R170-96. Made changes in accordance with N.O.R. 5962-R371-97. Add Appendix A for microcircuit die. Redrawn. - ro DATE (YR-MO-DA) 96-07-02 97-06-25 98-05-21 APPROVED M. A. FRYE R. MONNIN R. MONNIN
D
Make change to boilerplate and add class T devices. - ro
98-12-02
R. MONNIN
E
Add level P to table I. Make change to 1.5. - ro
99-04-13
R. MONNIN
REV SHEET REV SHEET REV STATUS OF SHEETS PMIC N/A E 15 E 16 E 17 E 18 REV SHEET PREPARED BY DAN WONNELL E 19 E 20 E 1 E 2 E 3 E 4 E 5 E 6 E 7 E 8 E 9 E 10 E 11 E 12 E 13 E 14
STANDARD MICROCIRCUIT DRAWING
THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE
CHECKED BY RAJESH PITHADIA
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216
APPROVED BY MICHAEL A. FRYE
DRAWING APPROVAL DATE 96-02-15
MICROCIRCUIT, LINEAR, RADIATION HARDENED, QUAD LOW NOISE, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
SIZE A SHEET CAGE CODE
AMSC N/A
REVISION LEVEL E
67268
1 OF 20
5962-95690
DSCC FORM 2233 APR 97 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
5962-E217-99
1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class T, the user is encouraged to review the manufacturer's Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application. 1.2 PIN. The PIN is as shown in the following example: 5962 * * * Federal stock class designator \ R * * * RHA designator (see 1.2.1) \/ Drawing number 1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type 01 Generic number HS-5104ARH Circuit function Radiation hardened, dielectrically isolated low noise, quad, operational amplifier 95690 01 * * * Device type (see 1.2.2) V * * * Device class designator (see 1.2.3) C * * * Case outline (see 1.2.4) C * * * Lead finish (see 1.2.5)
/
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class M Device requirements documentation Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Certification and qualification to MIL-PRF-38535 Certification and qualification to MIL-PRF-38535 with performance as specified in the device manufacturers approved quality management plan.
Q, V T
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter C X Descriptive designator CDIP2-T14 CDFP3-F14 Terminals 14 14 Package style Dual-in-line Flat pack
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V or MIL-PRF-38535, appendix A for device class M.
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1.3 Absolute maximum ratings. 1/ Voltage between V+ and V- ..................................................................... Differential input voltage............................................................................ Voltage at either input terminal ................................................................. Peak output current .................................................................................. Maximum device power dissipation (PD) .................................................. Thermal resistance, junction-to-case (JC): Case C ................................................................................................... Case X ................................................................................................... Thermal resistance, junction-to-ambient (JA): Case C ................................................................................................... Case X ................................................................................................... Junction temperature (TJ)......................................................................... Storage temperature range ...................................................................... Lead temperature (soldering, 10 seconds) .............................................. 1.4 Recommended operating conditions. Supply voltage range ................................................................................ Input low voltage range............................................................................. Common-mode input voltage (VCMIN)....................................................... Load resistance (RL) ................................................................................. Ambient operating temperature range (TA) .............................................. 1.5 Radiation features. Neutron ..................................................................................................... 3/ Maximum total dose available (Dose rate = 50 - 300 rad(Si)/s) ............. 100 Krads (Si) Latch up .................................................................................................... None 4/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. 5 V to 15 V 0 V to +0.8 V 1/2 (V+ - V-) 2 k -55C to +125C 40 V 7V +VS to -VS Indefinite (one amplifier shorted to GND) 0.23 W 2/ 24C/W 30C/W 75C/W 116C/W +175C -65C to +150C +275C
1/ 2/ 3/ 4/
Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. The power dissipation is the total power dissipated in the amplifier with the amplifier biased into its normal operating range and without any output load. PD = VCCICC + VEEIEE at +125C. Value to be specified when testing is completed. Guaranteed by process or design.
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STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 MIL-STD-973 MIL-STD-1835 HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 MIL-HDBK-780 List of Standard Microcircuit Drawings (SMD's). Standard Microcircuit Drawings. Test Method Standard Microcircuits. Configuration Management. Interface Standard For Microcircuit Case Outlines.
(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q, T and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Timing diagram(s). The timing diagram(s) shall be as specified on figure 2. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be as specified in table III. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.
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TABLE I. Electrical performance characteristics. Conditions -55C TA +125C unless otherwise specified VCM = 0 V 1/
Test
Symbol
Group A subgroups 1 2,3
Device type 01 Min -3 -15 -5 01 -300 -550 -1 -300 -550 -1 01 -300 -400 -1 01 75 100 50 40 75 100 50 40
Limits Max +3 +15 +5 +300 +550 +1 +300 +550 +1 +300 +400 +1
Unit
Input offset voltage
VIO
mV
M,D,P,L,R 2/ Input bias current +IIB VCM = 0 V, 1/ +RS = 10 k, -RS = 100 M,D,P,L,R 2/ -IIB VCM = 0 V, 1/ +RS = 100 , -RS = 10 k M,D,P,L,R 2/ Input offset current IIO VCM = 0 V, 1/ +RS = 10 k, -RS = 10 k M,D,P,L,R 2/ Large signal voltage gain +AVOL VOUT = 0 V and +10 V 1/ RL = 2 k
1 1 2,3 1 1 2,3 1 1 2,3 1 1 2 3
nA
A nA
A nA
A kV / V
M,D,P,L,R 2/ -AVOL VOUT = 0 V and -10 V 1/ RL = 2 k
1 1 2 3
M,D,P,L,R 2/
1
See footnotes at end of table.
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TABLE I. Electrical performance characteristics - Continued. Conditions -55C TA +125C unless otherwise specified V+ = 3 V, V- = -27 V 1/ VCM = +12 V, VOUT = -12 V -CMRR Output voltage swing +VOUT V+ = 27 V, V- = -3 V 1/ VCM = +12 V, VOUT = -12 V RL = 2 k 1/ RL = 10 k 1/ -VOUT RL = 2 k 1/ RL = 10 k 1/ Output current +IOUT -IOUT VOUT = -5 V 1/ VOUT = +5 V 1/ M,D,P,L,R 2/ Quiescent power supply current +ICC IOUT = 0 mA 1/ 1 1 2,3 -ICC IOUT = 0 mA 1/ 1 2,3 Power supply rejection ratio +PSRR -PSRR Rise and fall time TR VSUP = 10 V, V- = -15 V 1/ V+ = 10 V and 20 V VSUP = 10 V, V+ = 15 V 1/ V- = -10 V and -20 V VOUT = 0 V to 200 mV, 3/ 10% TR 90%, see figure 2 TF VOUT = 0 V to -200 mV, 3/ 10% TR 90%, see figure 2 Settling time TS AVCL = -1, 4/ 5/ 6/ see figure 2 4 5,6 4 5,6 9 01 01 1,2,3 01 -6.5 -7.5 80 80 200 250 200 250 6 s ns dB 01 1,2,3 01 10 -10 -7 6.5 7.5 mA 1,2,3 01 10 12 -10 -12 mA V 80
Test
Symbol
Group A subgroups 1,2,3
Device type 01 Min 80
Limits Max
Unit
Common mode rejection ratio
+CMRR
dB
See footnotes at end of table.
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TABLE I. Electrical performance characteristics - Continued. Conditions -55C TA +125C unless otherwise specified VOUT = 0 V, 4/ 5/ 7/ IOUT = 0 mA VOUT = -3 V to +3 V, 3/ see figure 2 -SR VOUT = +3 V to -3 V, 3/ see figure 2 Overshoot +OS VOUT = 0 V to 200 mV, 3/ see figure 2 -OS VOUT = 0 V to -200 mV, 3/ see figure 2 Differential input resistance Input noise voltage density Input noise current density Full power bandwidth Minimum closed loop stable gain Output resistance Channel separation RIN EN IN FPBW CLSG ROUT CS VCM = 0 V 4/ 5/ RS = 20 , 4/ 5/ fO = 1000 Hz RS = 20 M, 4/ 5/ fO = 1000 Hz VPK = 10 V 4/ 5/ 8/ RL = 2 k, CL = 50 pF 4/ 5/ Open loop 4/ 5/ RS = 1 k, 4/ 5/ AVCL = 100 V/V VIN = 100 mV RMS at 10 kHz, referenced to input
Test
Symbol
Group A subgroups 4,5,6 4 5,6 4 5,6 4 5,6 4 5,6 4 4 4 4 4,5,6 4 4
Device type Min 01 01 1 0.5 1 0.5 01
Limits Max 225
Unit
Quiescent power consumption Slew rate
PC +SR
mW V / s
45 50 45 50
%
01 01 01 01 01 01 01
250 6 3 32 1 150 90
k nVHz pAHz kHz V/V dB
See footnotes at end of table.
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TABLE I. Electrical performance characteristics - Continued. 1/ Unless otherwise specified, device tested at: supply voltage = 15 V, source resistance (RS) = 100 , load resistance (RL) = 100 k, VOUT = 0 V. 2/ Devices supplied to this drawing meet all levels M, D, P, L and R of irradiation however this device is only tested at the "R" level (see 1.5). Pre and post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA = +25C. 3/ Unless otherwise specified, device tested at: supply voltage = 15 V, source resistance (RS) = 50 , load resistance (RL) = 2 k, load capacitance (CL) = 50 pF, AVCL = 1 V/V. 4/ Unless otherwise specified, device tested at: supply voltage = 15 V, load resistance (RL) = 2 k, load capacitance (CL) = 50 pF, AVCL = 1 V/V. 5/ If not tested, shall be guaranteed to the limits specified in table I herein. 6/ Settling time measured from the 90% point of a 10 V input pulse to within 10 mV of the settled value. 7/ Quiescent power consumption based upon quiescent supply current test maximum. No load on outputs. 8/ Full power bandwidth guarantee based on slew rate measurement using FPBW = slew rate/(2VPK).
3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a "QML" or "Q" as required in MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q, T and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973. 3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A).
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Device type Case outlines Terminal number 1 2 3 4 5 6 7 8 9 10 11 12 13 14
01 C and X Terminal symbol OUT 1 -IN 1 +IN 1 V+ +IN 2 -IN 2 OUT 2 OUT 3 -IN 3 +IN 3 V+IN 4 -IN 4 OUT 4
FIGURE 1. Terminal connections.
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FIGURE 2. Timing waveforms.
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4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's (QM) plan, including screening (4.2), qualification (4.3), and conformance inspection (4.4). The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class T, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's (QM) plan, including screening, qualification, and conformance inspection. The performance envelope and reliability information shall be as specified in the manufacturer's QM plan. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. For device class T, screening shall be in accordance with the device manufacturer's Quality Management (QM) plan, and shall be conducted on all devices prior to qualification and technology conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. (2) TA = +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table IIA herein.
4.2.2 Additional criteria for device classes Q, T and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of MIL-STD-883. Interim and final electrical test parameters shall be as specified in table IIA herein. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B or as modified in the device manufacturer's Quality Management (QM) plan.
b. c.
4.3 Qualification inspection for device classes Q, T and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Qualification inspection for device class T shall be in accordance with the device manufacturer's Quality Management (QM) plan. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 or as specified in the QM plan including groups A, B, C, D, and E inspections and as specified herein except where option 2 of MIL-PRF-38535 permits alternate in-line control testing. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). Technology conformance inspection for class T shall be in accordance with the device manufacturer's Quality Management (QM) plan.
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TABLE IIA. Electrical test requirements. Test requirements Subgroups (in accordance with MIL-STD-883, method 5005, table I) Device class M Interim electrical parameters (see 4.2) Final electrical parameters (see 4.2) Group A test requirements (see 4.4) Group C end-point electrical parameters (see 4.4) Group D end-point electrical parameters (see 4.4) Group E end-point electrical parameters (see 4.4) 1,4 1,2,3,4,5,6,9 1/ 1,2,3,4,5,6,9 1,2,3,4,5,6,9 1,4 1,4 1,4 1,2,3,4,5,6, 1/ 9 1,2,3,4,5,6,9 1,2,3,4,5,6,9 1,4 1,4 Device class Q 1,4 1,2,3, 1/ 2/ 4,5,6,9 1,2,3,4,5,6,9 1,2,3,, 2/ 4,5,6,9 1,4 1,4 Subgroups (in accordance with MIL-PRF-38535, table III) Device class V Device class T As specified in QM plan
1/ PDA applies to subgroup 1. For class V to subgroups 1 and . 2/ Delta limits (see table IIB) shall be required and the delta values shall be computed with reference to the zero hour electrical parameters (see table I).
TABLE IIB. Post burn-in delta parameters (+25C). Parameters Input offset voltage Input bias current Input offset current Symbol VIO +IIB / -IIB IIO Delta limits 2 mV 75 nA 75 nA
TABLE III. Irradiation test connections. (TA = +25C 5C, V+ = 15 V 0.5 V, V- = -15 V 0.5 V) TEST Radiation exposure GROUND 3,5,10,12 V+ 4 V11 OUT to -IN (for each op. amp.) 1 to 2, 7 to 6, 8 to 9, 14 to 13
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4.4.1 Group A inspection. a. b. Tests shall be as specified in table IIA herein. Subgroups 7, 8, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883: a. Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MILSTD-883. TA = +125C, minimum. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
b. c.
4.4.2.2 Additional criteria for device classes Q, T and V. The steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with MIL-PRF38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-STD-883. 4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). RHA levels for device classes M, Q and V shall be as specified in MIL-PRF-38535 and the end-point electrical parameters shall be as specified in table IIA herein. For device class T, the RHA requirements shall be in accordance with the Class T Radiation Requirements of MIL-PRF-38535. The end-point electrical parameters for class T devices shall be as specified in Table I, Group A subgroups, or as modified in the QM plan. 4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method 1019 condition A and as specified herein. For device class T, the total dose requirements shall be in accordance with the class T radiation requirements of MIL-PRF-38535 (see 1.5 herein). 4.4.4.1.1 Accelerated aging test. Accelerated aging tests shall be performed on all devices requiring a RHA level greater than 5k rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the pre-irradiation end-point electrical parameter limit at 25C 5C. Testing shall be performed at initial qualification and after any design or process changes which may affect the RHA response of the device. 4.4.4.2 Neutron testing. Neutron testing shall be performed in accordance with test method 1017 of MIL-STD-883 and herein (see 1.5). All device classes must meet the post irradiation end-point electrical parameter limits as defined in table I, for the 12 2 subgroups specified in Table IIA herein at TA = +25C 5C after an exposure of 2 x 10 neutrons/cm (minimum). 4.4.4.3 Dose rate induced latchup testing. Dose rate induced latchup testing shall be performed in accordance with test method 1020 of MIL-STD-883 and as specified herein (see 1.5 herein). Tests shall be performed on devices, SEC, or approved test structures at technology qualification and after any design or process changes which may effect the RHA capability of the process.
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4.4.4.4 Dose rate burnout. When required by the customer, test shall be performed on devices, SEC, or approved test structures at technology qualifications and after any design or process changes which may effect the RHA capability of the process. Dose rate burnout shall be performed in accordance with test method 1023 of MIL-STD-883 and as specified herein. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes Q, T and V or MIL-PRF-38535, appendix A for device class M. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing. 6.1.2 Substitutability. Device class Q devices will replace device class M devices. 6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for the individual documents. This coordination will be accomplished in accordance with MIL-STD-973 using DD Form 1692, Engineering Change Proposal. 6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus when a system application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0525. 6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43216-5000, or telephone (614) 692-0674. 6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. 6.6 Sources of supply. 6.6.1 Sources of supply for device classes Q, T and V. Sources of supply for device classes Q, T and V are listed in QML-38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to this drawing. 6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103. The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by DSCC-VA.
STANDARD MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
DSCC FORM 2234 APR 97
SIZE
A
REVISION LEVEL
5962-95690
SHEET
E
14
APPENDIX A APPENDIX A FORM A PART OF SMD 5962-95690 10. SCOPE 10.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers approved QML plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of military high reliability (device class Q) and space application (device Class V) are reflected in the Part or Identification Number (PIN). When available a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 10.2 PIN. The PIN is as shown in the following example: 5962 * * * Federal stock class designator \ R * * * RHA designator (see 10.2.1) \/ Drawing number 95690 01 * * * Device type (see 10.2.2) V * * * Device class designator (see 10.2.3) 9 * * * Die code A * * * Die Details (see 10.2.4)
/
10.2.1 RHA designator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. A dash (-) indicates a non-RHA die. 10.2.2 Device type(s). The device type(s) shall identify the circuit function as follows: Device type 01 Generic number HS-5104ARH Circuit function Radiation hardened dielectrically isolated low noise quad operational amplifier
10.2.3 Device class designator. Device class Q or V Device requirements documentation Certification and qualification to the die requirements of MIL-PRF-38535
10.2.4. Die Details. The die details designation shall be a unique letter which designates the die=s physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix. 10.2.4.1 Die physical dimensions. Die type 01 Figure number A-1
STANDARD MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
DSCC FORM 2234 APR 97
SIZE
A
REVISION LEVEL
5962-95690
SHEET
E
15
APPENDIX A APPENDIX A FORM A PART OF SMD 5962-95690 10.2.4.2. Die bonding pad locations and electrical functions. Die type 01 10.2.4.3. Interface materials. Die type 01 10.2.4.4. Assembly related information. Die type 01 Figure number A-1 Figure number A-1 Figure number A-1
10.3. Absolute maximum ratings. See paragraph 1.3 within the body of this drawing for details. 10.4 Recommended operating conditions. See paragraph 1.4 within the body of this drawing for details.
20. APPLICABLE DOCUMENTS. 20.1 Government specifications, standards, and handbooks. Unless otherwise specified, the following specification, standard, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 HANDBOOK DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings (SMD=s). (Copies of the specification, standard, and handbook required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity). - Test Method Standard Microcircuits.
STANDARD MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
DSCC FORM 2234 APR 97
SIZE
A
REVISION LEVEL
5962-95690
SHEET
E
16
APPENDIX A APPENDIX A FORM A PART OF SMD 5962-95690 20.2. Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. 30. REQUIREMENTS 30.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer=s Quality Management (QM) plan. The modification in the QM plan shall not effect the form, fit or function as described herein. 30.2 Design, construction and physical dimensions. The design, construction and physical dimensions shall be as specified in MIL-PRF-38535 and the manufacturer=s QM plan, for device classes Q and V and herein. 30.2.1 Die physical dimensions. The die physical dimensions shall be as specified in 10.2.4.1 and on figure A-1. 30.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as specified in 10.2.4.2 and on figure A-1. 30.2.3 Interface materials. The interface materials for the die shall be as specified in 10.2.4.3 and on figure A-1. 30.2.4 Assembly related information. The assembly related information shall be as specified in 10.2.4.4 and figure A-1. 30.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined within paragraph 3.2.4. of the body of this document. 30.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this document. 30.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table I. 30.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufacturer=s identification and the PIN listed in 10.2 herein. The certification mark shall be a "QML" or "Q" as required by MIL-PRF-38535. 30.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer=s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein. 30.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuit die delivered to this drawing.
STANDARD MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
DSCC FORM 2234 APR 97
SIZE
A
REVISION LEVEL
5962-95690
SHEET
E
17
APPENDIX A APPENDIX A FORM A PART OF SMD 5962-95690 40. QUALITY ASSURANCE PROVISIONS 40.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer=s Quality Management (QM) plan. The modifications in the QM plan shall not effect the form, fit or function as described herein. 40.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the manufacturer=s QM plan. As a minimum it shall consist of: a) b) c) Wafer lot acceptance for Class V product using the criteria defined within MIL-STD-883 test method 5007. 100% wafer probe (see paragraph 30.4). 100% internal visual inspection to the applicable class Q or V criteria defined within MIL-STD-883 test method 2010 or the alternate procedures allowed within MIL-STD-883 test method 5004.
40.3 Conformance inspection. 40.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see 30.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified within paragraphs 4.4.4.1, 4.4.4.1.1., 4.4.4.2, 4.4.4.3, and 4.4.4.4. 50. DIE CARRIER 50.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer=s QM plan or as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and electrostatic protection. 60 NOTES 60.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with MILPRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications and logistics purposes. 60.2 Comments. Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43216-5000 or telephone (614)-692-0536. 60.3 Abbreviations, symbols and definitions. The abbreviations, symbols, and definitions used herein are defined within MILPRF-38535 and MIL-STD-1331. 60.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535. The vendors listed within QML-38535 have submitted a certificate of compliance (see 30.6 herein) to DSCC-VA and have agreed to this drawing.
STANDARD MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
DSCC FORM 2234 APR 97
SIZE
A
REVISION LEVEL
5962-95690
SHEET
E
18
APPENDIX A APPENDIX A FORM A PART OF SMD 5962-95690
NOTE: Pad numbers reflect terminal numbers when placed in case outlines C and X (see figure 1). FIGURE A-1. Die bonding pad locations and electrical functions.
STANDARD MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
DSCC FORM 2234 APR 97
SIZE
A
REVISION LEVEL
5962-95690
SHEET
E
19
APPENDIX A APPENDIX A FORM A PART OF SMD 5962-95690
Die physical dimensions. Die size: 2420 microns x 2530 microns Die thickness: 19 1 mils Interface materials. Top metallization: Al/Cu 16.0 kD 2 kD Backside metallization: None Glassivation. Type: Nitride (over SiO2) Thickness: 3.5 kD 1.5 kD Type: Si02 Thickness: 12 kD 2.0 kD Substrate: Dielectrically Isolated (DI) Assembly related information. Substrate potential: Insulator Special assembly instructions: None
FIGURE A-1. Die bonding pad locations and electrical functions - Continued.
STANDARD MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
DSCC FORM 2234 APR 97
SIZE
A
REVISION LEVEL
5962-95690
SHEET
E
20
STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 99-04-13 Approved sources of supply for SMD 5962-95690 are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by DSCC-VA. This bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535.
Standard microcircuit drawing PIN 1/ 5962R9569001VCC 5962R9569001VXC 5962R9569001V9A 5962R9569001TCC 5962R9569001TXC
Vendor CAGE number 34371 34371 34371 34371 34371
Vendor similar PIN 2/ HS1-5104ARH-Q HS9-5104ARH-Q HS0-5104ARH-Q HS1-5104ARH-T HS9-5104ARH-T
1/ The lead finish shown for each PIN representing a hermetic package is the most readily available from the manufacturer listed for that part. If the desired lead finish is not listed contact the vendor to determine its availability. 2/ Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing.
Vendor CAGE number 34371
Vendor name and address Harris Semiconductor P.O. Box 883 Melbourne, FL 32902-0883
The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin.

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