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| MITSUBISHI IGBT MODULES CM75TU-12F HIGH POWER SWITCHING USE CM75TU-12F IC ..................................................................... 75A VCES ............................................................ 600V Insulated Type 6-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 102 80 0.25 20 4-5.5 MOUNTING HOLES (4) CM N 11 19.1 E G P 11 E 19.1 G 11 11.85 E GuN EuN GvN EvN GwN EwN GuP EuP G 74 0.25 91 GvP EvP GwP EwP U V W G E G E G E 39.3 18.7 1.25 10 10 5-M4NUTS Tc measured point 2.8 10 11 20 19.1 10 20 11 10 1.25 0.5 3.05 11 4 Tc measured point P GUP 29 -0.5 +1 19.1 7.1 GVP RTC EVP GVN RTC EVN V GWP RTC EWP GWN RTC EWN W 8.1 RTC EUP U LABEL 26 GUN RTC EUN N CIRCUIT DIAGRAM Sep.2000 MITSUBISHI IGBT MODULES CM75TU-12F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25C Pulse TC = 25C Pulse TC = 25C Conditions Ratings 600 20 75 150 75 150 290 -40 ~ +150 -40 ~ +125 2500 1.3 ~ 1.7 2.5 ~ 3.5 570 Unit V V A A W C C V N*m N*m g (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M4 Mounting holes M5 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Test conditions VCE = VCES, VGE = 0V IC = 7.5mA, VCE = 10V VGE = VCES, VCE = 0V Tj = 25C IC = 75A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 300V, IC = 75A, VGE = 15V VCC = 300V, IC = 75A VGE1 = VGE2 = 15V RG = 8.3, Inductive load switching operation IE = 75A IE = 75A, VGE = 0V IGBT part (1/6 module) FWDi part (1/6 module) Case to fin, Thermal compoundapplied*2 (1/6 module) Tc measured point is just under the chips Min. -- 5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8.3 Limits Typ. -- 6 -- 1.6 1.6 -- -- -- 465 -- -- -- -- -- 1.4 -- -- -- 0.11 -- -- Max. 1 7 20 2.2 -- 20 1.4 0.75 -- 100 80 300 250 150 -- 2.6 0.43 0.9 -- 0.34*3 83 Unit mA V A V nF nC ns ns C V C/W Contact thermal resistance Thermal resistance External gate resistance Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". *3 : If you use this value, Rth(f-a) should be measured just under the chips. Sep.2000 MITSUBISHI IGBT MODULES CM75TU-12F HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 150 COLLECTOR CURRENT IC (A) 125 100 75 8.5 50 25 0 8 7.5 0 0.5 1 1.5 2 2.5 3 3.5 4 Tj=25C VGE=20V 15 11 10 9.5 9 3 VGE = 15V 2.5 2 1.5 1 0.5 0 Tj = 25C Tj = 125C 0 50 100 150 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 103 Tj = 25C EMITTER CURRENT IE (A) 7 5 3 2 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) Tj = 25C 4 102 7 5 3 2 3 IC = 150A IC = 75A IC = 30A 2 101 7 5 3 2 1 0 6 8 10 12 14 16 18 20 100 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 td(off) tf td(on) Conditions: VCC = 300V VGE = 15V RG = 8.3 Tj = 125C Cies SWITCHING TIMES (ns) 101 7 5 3 2 102 7 5 3 2 100 7 5 3 2 101 7 5 3 2 tr Coes Cres VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7103 COLLECTOR CURRENT IC (A) Sep.2000 MITSUBISHI IGBT MODULES CM75TU-12F HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) 7 5 3 2 trr Irr NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (C/W) 102 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j-c) = 0.43C/ W 3 FWDi part: 2 Per unit base = Rth(j-c) = 0.9C/ W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 101 7 5 3 2 Conditions: VCC = 300V VGE = 15V RG = 8.3 Tj = 25C 2 3 5 7 101 2 3 5 7 102 10-1 10-1 7 5 3 2 7 5 3 2 10-2 Single Pulse TC = 25C 10-2 100 0 10 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TMIE (s) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 0 IC = 75A VCC = 200V VCC = 300V 100 200 300 400 500 600 700 GATE CHARGE QG (nC) Sep.2000 |
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