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Advance Technical Information HiPerFASTTM IGBT B2-Class High Speed IGBT IXGA 16N60B2 IXGP 16N60B2 IXGA 16N60B2D1 IXGP 16N60B2D1
VCES = 600 V = 40 A IC25 VCE(sat) = 2.3 V tfi(typ) = 80 ns
D1
Symbol VCES VCGR VGES VGEM IC25 IC110 ID110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 110C TC = 110C (IXG_16N60B2D1 diode) TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 22 Clamped inductive load TC = 25C
Maximum Ratings 600 600 20 30 40 16 11 100 ICM = 32 @0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A A
G G E
TO-263 (IXGA)
C (TAB)
TO-220 (IXGP)
W C C C Features C C g g G = Gate E = Emitter
CE
C (TAB)
C = Collector TAB = Collector
Mounting torque
(M3.5 screw)
0.55/5 Nm/lb.in. 300 260 4 2
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature soldering SMD devices for 10s Weight TO-220 TO-263
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.5 16N60B2 16N60B2D1 5.0 25 50 100 2.3 TJ=125C 1.8 V A A nA V V
International standard packages IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers MOS Gate turn-on - drive simplicity Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Advantages Saves space (two devices in one package) Easy to mount with 1 screw Reduces assembly time and cost
VGE(th) ICES IGES VCE(sat)
IC = 250 A, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = 12A, VGE = 15 V Note 2
(c) 2004 IXYS All rights reserved
DS99141A(3/04)
IXGP 16N60B2 IXGA 16N60B2D1 IXGA 16N60B2 IXGA 16N60B2D1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 8 12 780 16N620B2 16N60B2D1 IC = 20A, VGE = 15 V, VCE = 0.5 VCES 55 65 19 32 6 10 Inductive load, TJ = 25C IC = 12 A; VGE = 15 V VCE = 400 V; RG = Roff = 22 Note 1. 25 15 70 80 150 Inductive load, TJ = 125C IC = 12A; VGE = 15 V VCE = 400 V; RG = Roff = 22 Note 1 (16N60B2) 25 18 0.35 110 170 350 (IXGP) 0.5 150 150 260 S pF pF pF pF nC nC nC ns ns ns ns J ns ns mJ ns ns J 0.83 K/W K/W TO-263 Outline
Pins: 1 - Gate 3 - Emitter
TO-220 Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = 12A; VCE = 10 V, Note 2. VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse Diode (FRED) Symbol VF IRM t rr t rr RthJC Notes: Test Conditions IF = 10 A, VGE = 0 V TJ = 125 C
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.66 1.66 2.5 110 30 V V A ns ns 2.5 K/W
Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029
IF = 12 A; -diF/dt = 100 A/s, VR = 100 V VGE = 0 V; TJ = 125 C IF = 1 A; -diF/dt = 100 A/s; VR = 30 V, VGE = 0 V
1. Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG. 2. Pulse test, t < 300 s, duty cycle d < 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

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