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Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 75 GD 60 DLC
Hochstzulassige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode 2 I t - value, Diode Isolations-Prufspannung insulation test voltage tP = 1 ms TC = 70 C TC = 25 C tP = 1 ms, TC = 70C VCES IC,nom. IC ICRM 600 75 95 150 V A A A
TC=25C, Transistor
Ptot
330
W
VGES
+/- 20V
V
IF
75
A
IFRM
150
A
VR = 0V, tp = 10ms, TVj = 125C
I2t
1.200
A2s
RMS, f = 50 Hz, t = 1 min.
VISOL
2,5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 75A, VGE = 15V, Tvj = 25C IC = 75A, VGE = 15V, Tvj = 125C IC = 1,5 mA, VCE = VGE, Tvj = 25C VCE sat
min.
VGE(th) 4,5
typ.
1,95 2,20 5,5
max.
2,45 6,5 V V V
f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V
Cies
-
3,3
-
nF
f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V VCE = 600V, VGE = 0V, Tvj = 25C VCE = 600V, VGE = 0V, Tvj = 125C VCE = 0V, VGE = 20V, Tvj = 25C
Cres
-
0,3 1 1 -
500 400
nF A mA nA
ICES
IGES
-
prepared by: Andreas Vetter approved by: Michael Hornkamp
date of publication: 2000-04-26 revision: 1
1 (8)
BSM 75 GD 60 DLC 2000-02-08
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 75 GD 60 DLC
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 75 A, VCC = 300V VGE = 15V, RG = 3,0 , Tvj = 25C VGE = 15V, RG = 3,0 , Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 75 A, VCC = 300V VGE = 15V, RG = 3,0 , Tvj = 25C VGE = 15V, RG = 3,0 , Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 75 A, VCC = 300V VGE = 15V, RG = 3,0 , Tvj = 25C VGE = 15V, RG = 3,0 , Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 75 A, VCC = 300V VGE = 15V, RG = 3,0 , Tvj = 25C VGE = 15V, RG = 3,0 , Tvj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modul-Leitungswiderstand, Anschlusse - Chip lead resistance, terminals - chip Tc= 25C IC = 75 A, VCC = 300V, VGE = 15V RG = 3,0 , Tvj = 125C, L = 15 nH IC = 75 A, VCC = 300V, VGE = 15V RG = 3,0 , Tvj = 125C, L = 15 nH tP 10sec, VGE 15V TVj125C, VCC=360V, VCEmax= VCES -LCE *di/dt Eon tf 20 35 0,7 ns ns mJ td,off 155 170 ns ns tr 22 25 ns ns td,on 63 65 ns ns
min.
typ.
max.
Eoff
-
2,4
-
mJ
ISC
-
340
-
A
LCE
-
55
-
nH
RCC'+EE'
-
4,4
-
m
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 75 A, VGE = 0V, Tvj = 25C IF = 75 A, VGE = 0V, Tvj = 125C IF = 75 A, - diF/dt = 3000 A/sec VR = 300V, VGE = -10V, Tvj = 25C VR = 300V, VGE = -10V, Tvj = 125C Sperrverzogerungsladung recovered charge IF = 75 A, - diF/dt = 3000 A/sec VR = 300V, VGE = -10V, Tvj = 25C VR = 300V, VGE = -10V, Tvj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 75 A, - diF/dt = 3000 A/sec VR = 300V, VGE = -10V, Tvj = 25C VR = 300V, VGE = -10V, Tvj = 125C Erec 2,3 mJ mJ Qr 5,1 7,9 C C IRM 95 115 A A VF
min.
-
typ.
1,25 1,20
max.
1,6 V V
2 (8)
BSM 75 GD 60 DLC 2000-02-08
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 75 GD 60 DLC
Thermische Eigenschaften / Thermal properties
min.
Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode/Diode, DC pro Modul / per module Paste = 1 W/m*K / grease = 1 W/m*K RthCK RthJC -
typ.
0,02
max.
0,37 0,73 K/W K/W K/W
Tvj
-
-
150
C
Top
-40
-
125
C
Tstg
-40
-
125
C
Mechanische Eigenschaften / Mechanical properties
Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight G Schraube M5 screw M5 M1 -15 180 Al2O3
225 4 15 Nm % Nm Nm g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.
3 (8)
BSM 75 GD 60 DLC 2000-02-08
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 75 GD 60 DLC
Ausgangskennlinie (typisch) Output characteristic (typical) I C = f (VCE)
VGE = 15V
150
Tvj = 25C Tvj = 125C
125
100
IC [A]
75
50
25
0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5
VCE [V]
Ausgangskennlinienfeld (typisch) Output characteristic (typical)
150
VGE = 8V VGE = 9V VGE = 10V VGE = 12V VGE = 15V VGE = 20V
I C = f (VCE)
Tvj = 125C
125
100
IC [A]
75
50
25
0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VCE [V]
4 (8)
BSM 75 GD 60 DLC 2000-02-08
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 75 GD 60 DLC
Ubertragungscharakteristik (typisch) Transfer characteristic (typical) I C = f (VGE)
VCE = 20V
150
Tvj = 25C
125
Tvj = 125C
100
IC [A]
75
50
25
0 5 6 7 8 9 10 11 12 13
VGE [V]
Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical)
150
Tvj = 25C Tvj = 125C
I F = f (VF)
125
100
IF [A]
75
50
25
0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6
VF [V]
5 (8)
BSM 75 GD 60 DLC 2000-02-08
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 75 GD 60 DLC
Schaltverluste (typisch) Switching losses (typical) E on = f (IC) , E off = f (IC) , E rec = f (IC)
RG,on = 3,0,=RG,off = 3,0 , VCC = 300V, Tvj = 125C ,= ,
5,0 4,5
Eon
4,0 3,5 E [mJ] 3,0 2,5 2,0 1,5 1,0 0,5 0,0 0 15
Eoff Erec
30
45
60
75
90
105
120
135
150
IC [A]
Schaltverluste (typisch) Switching losses (typical)
4,0 3,5 3,0 2,5 E [mJ] 2,0 1,5 1,0 0,5 0,0 0 5
Eon Eoff Erec
E on = f (RG) , E off = f (RG) , E rec = f (RG)
IC = 75 A , VCC = 300V , Tvj = 125C
10
15
20
RG []
6 (8)
BSM 75 GD 60 DLC 2000-02-08
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 75 GD 60 DLC
Transienter Warmewiderstand Transient thermal impedance Z thJC = f (t)
1
ZthJC [K / W]
Zth:IGBT 0,1 Zth:Diode
0,01 0,001
0,01
0,1
1
10
t [sec] i ri [K/kW] i [sec] ri [K/kW] i [sec]
1 15,7 0,0020 257,3 0,0980 2 193,9 0,0240 246,7 0,0340 3 130,4 0,0651 155,0 0,1069 4 30,0 0,6626 71,1 0,9115
: IGBT : IGBT : Diode : Diode
Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA)
175 150 125 100 75 50 25 0 0 100 200 300 400 IC,Modul IC,Chip
VGE= +15V, R G,off = 3,0 , Tvj= 125C
IC [A]
500
600
700
VCE [V]
7 (8)
BSM 75 GD 60 DLC 2000-02-08
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 75 GD 60 DLC
Gehausemae / Schaltbild Package outline / Circuit diagram
8 (8)
BSM 75 GD 60 DLC 2000-02-08

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