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Control Devices
Control Devices: MMP 7000 Series
Low - High Power PIN Diodes
Description The MicroMetrics MMP 7000 series PIN diodes are manufactured using very high resistivity silicon epitaxial material grown on a highly doped low resistivity substrate. Combined with a grown junction P++ layer, this yields a very abrupt structured "I" region with minimum outdoping and low voltage punchthrough characteristics. Features * High Temperature Passivation for Reliability * Grown Junction for sharp "I" Region Interface * Full Area Gold Contact for the Lowest Capacitance and Largest Bonding Pad Available * Lot Traceability and Lot Control, Assuring High Reproducibility Packaging * Chip, Glass, Ceramic
Our high temperature passivation and state of the art metallization produce diodes that are designed to cover a wide range of applications that fall www..com into the general categories of switching, phase switching, attenuating and limiting. These devices are rugged and able to meet all visual criteria in space and military applications. Applications The MMP series are used in switch applications which include high speed low power switches, medium speed higher power switches, high power switches and attenuators, TR switches, digital phase shifters and duplexers.
Typical Performance
1000 MMP7032 MMP7033 MMP7034 MMP7035 100 MMP7036 MMP7037
SERIES RESISTANCE, RS (Ohms)
10
1.0
.10
.01
.10 1.0 10 FORWARD BIAS CURRENT, IF (mA)
100
1000 MMP7021 100 MMP7022 MMP7023 MMP7024 MMP7025 10
SERIES RESISTANCE, RS (Ohms)
SERIES RESISTANCE, RS (Ohms)
1000 MMP7026 MMP7027 MMP7028 MMP7029 100 MMP7030
10
1.0
1.0
.10 .01 .10 1.0 10 FORWARD BIAS CURRENT, IF (mA) 100
.10 .01 .10 1.0 10 FORWARD BIAS CURRENT, IF (mA) 100
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MicroMetrics, Inc. 136 Harvey Road, Building C, Londonderry, NH 03053 Voice: 603-641-3800, Fax: 603-641-3500, Internet: www.micrometrics.com, E-mail: serv@micrometrics.com
Electrical Characteristics
Ultra Fast Switching
Vbr1 MIN (V) 25 25 25 25 Cj-10 V2 MAX (pF) .1 .15 .2 .25 Tl3 TYP (nS) 10 10 10 10 jc MAX C/W 60 50 40 35 TS. Max. NS 1.5 1.5 1.5 1.5 RS@ 50 MA OHMS MAX .7 .55 .45 .4 RS@ 10 MA OHMS TYP 1 .8 .7 .6 Part Number MMP7010 MMP7011 MMP7012 MMP7013
Fast Switching, Low Power
Vbr1 MIN (V) Cj-10 V2 MAX (pF) Tl3 TYP (nS) 60 60 60 60 60 100 100 100 100 100 100 225 225 225 225 225 225 jc MAX C/W 80 70 60 55 50 90 80 70 60 55 50 90 80 70 60 55 50 TS. MAX. NS 5 5 5 5 5 10 10 10 10 10 15 15 15 15 15 15 15 RS@ 75 MA OHMS MAX .9 .7 .6 .5 .45 1.2 .9 .7 .6 .5 .45 1.9 1.2 .9 .8 .7 .6 RS@ 20 MA OHMS TYP 1.2 1.0 .9 .7 .5 1.9 1.5 1.2 1.0 .9 .8 3.0 2.2 1.6 1.0 .8 .7 Part Number MMP7020 MMP7021 MMP7022 MMP7023 MMP7024 MMP7025 MMP7026 MMP7027 MMP7028 MMP7029 MMP7030 MMP7031 MMP7032 MMP7033 MMP7034 MMP7035 MMP7036
70 www..com .05 70 70 70 70 100 100 100 100 100 100 200 200 200 200 200 200 .1 .15 .2 .25 .03 .07 .1 .15 .2 .3 .03 .07 .1 .15 .2 .3
Notes: 1. Reverse Breakdown Voltage measured at 10a. 2. Junction Capacitance measured at -10 volts at 1 MHz. 3. Minority Carrier lifetime measured with IF = 10 mA IR = 6mA. 4. RF Switching speed measured from 90% to 10% and 10% to 90% transmission. Drive output = +20 mA and -4 volts, 200 mA spike with a rise time of 2 nS. 5. Series Resistance is measured at 1 GHz using transmission loss techniques.
Maximum Ratings
Operating Temperature Storage Temperature Reverse Breakdown Voltage (Vbr) Junction Capacitance (Cj-10) Switching Speed (TS) Lifetime (Tl) Chip Thickness -55C to 150C -65C to 200C from 25 volts to 500 volts volts at 10 A from .03 pF to .5 pF at 10 volts from 1 nS to 25 nS from 5 nS to 2.0 S .004 - .007" thick
Continued on next page.
MicroMetrics, Inc. 136 Harvey Road, Building C, Londonderry, NH 03053 Voice: 603-641-3800, Fax: 603-641-3500, Internet: www.micrometrics.com, E-mail: serv@micrometrics.com
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Control Devices
Control Devices: MMP 7000 Series
Control Devices
Control Devices: MMP 7000 Series (Continued)
Electrical Characteristics
Medium Power, General Purpose
Vbr1 MIN (V) Cj-10 V2 MAX (pF) .03 .07 .1 .15 .2 .3 .5 .03 .07 .1 .15 .2 .3 .5 TL3 TYP (nS) 400 400 400 400 400 400 400 600 600 600 600 600 600 600 jc MAX C/W 65 60 55 50 45 40 20 60 55 50 45 40 35 15 TS. MAX. NS 20 20 20 20 20 20 20 25 25 25 25 25 25 25 RS@ 75 MA OHMS MAX 2.6 1.5 1.3 1.0 .8 .7 .6 2.6 1.6 1.2 .9 .8 .7 .6 RS@ 20MA OHMS TYP 3.5 2.2 2.0 1.9 1.7 1.4 1.2 3.5 3.2 2.0 1.9 1.7 1.4 1.2 Part Number MMP7040 MMP7041 MMP7042 MMP7043 MMP7044 MMP7045 MMP7046 MMP7047 MMP7048 MMP7049 MMP7050 MMP7051 MMP7052 MMP7053
200 200 200 200 200 200 200 200 200 200 200 www..com 200 200 200
High Power Switching & Attenuation
Vbr1 MIN (V) Cj-10 V2 MAX (pF) TL3 TYP (S) Rs5@ 1 mA MAX (Ohms) 25 20 15 8 6 40 15 10 8 6 Rs5@ 10 mA MAX (Ohms) 10 8 6 3.5 2.0 8 5 4 3.5 2.0 Rs5@ 100 mA MAX (Ohms) 2.0 1.5 1.2 1.0 0.8 1.5 1.2 1.0 0.8 0.7 jc MAX C/W Part Number
250 250 250 250 250 500 500 500 500 500
.05 .08 .1 .2 .3 .08 .1 .2 .3 .5
1.0 1.0 1.0 1.0 1.5 1.5 1.5 1.5 2.0 2.0
20 20 20 15 15 15 15 12 10 10
MMP7060 MMP7061 MMP7062 MMP7063 MMP7064 MMP7065 MMP7066 MMP7067 MMP7068 MMP7069
Notes: 1. Reverse Breakdown Voltage measured at 10 A. 2. Junction Capacitance measured at -10 volts at 1 MHz. 3. Minority Carrier lifetime measured with IF = 10 mA, IR = 6 mA. 4. RF Switching speed measured from 90% to 10% and 10% to 90% transmission. Drive output = +20 mA and -4 volts, 200 mA spike with a rise time of 2 nS. 5. Series Resistance is measured at 1 GHz using transmission loss techniques.
Maximum Ratings
Operating Temperature Storage Temperature Reverse Breakdown Voltage (Vbr) Junction Capacitance (Cj-10) Switching Speed (Ts) Lifetime (Tl) Chip Thickness -55C to 150C -65C to 200C from 25 volts to 500 volts volts at 10 A from .03 pF to .5 pF at 10 volts from 1 nS to 25 nS from 5 nS to 2.0 S .004" - .007" thick
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MicroMetrics, Inc. 136 Harvey Road, Building C, Londonderry, NH 03053 Voice: 603-641-3800, Fax: 603-641-3500, Internet: www.micrometrics.com, E-mail: serv@micrometrics.com

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