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| www..com MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n n Suitable for WLL Suscriber/CPE High Power P1dB=29dBm(min) n n TMD3438-1 High Gain G1dB=29dB(min) High Linearity ABSOLUTE MAXIMUM RATINGS(Ta=25 o C) CHARACTERISTICS Drain Supply Voltage Gate Supply Voltage Input Power Total Power Dissipation Flange Temperature Storage Temperature SYMBOL VDD VGG Pin PT Tf Tstg UNIT V V dBm W oC oC RATINGS 10 -10 10 6 -40 ~ +85 -65 ~ +150 RF PERFORMANCE SPECIFICATIONS (Ta=25 o C) CHARACTERISTICS Operating Frequency Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Noise Figure Drain Current Input Return Loss Output Return Loss NF IDD @ Pin=-6dBm Small Level Signal dB mA dB dB 10 10 8.0 500 9.0 550 G1dB SYMBOL f P1dB VDD=7.5V VGG=-5.0V dB 29.0 CONDITION UNIT GHz dBm MIN. 3.4 29.0 TYP. MAX. 3.8 u u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein may be changed without prior notice. It is therefore advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. March, 00e 1 www..com TMD3438-1 Package Outline Unit in mm Pin2 : VDD1 Pin3 : RF Input Pin4 : No Connection Pin5 : VGG Pin14 : No Connection Pin15: RF Output Pin16: No Connection Pin17: VDD2 Others : GND * - he backside of Package has to be grounded by soldering. T 2 www..com TMD3438-1 Recommended Bias Configuration 10.0 Substrate Thickness: Dielectric Constant: Thickness of Metalizaion: 0.6mm 5.0 1oz RC Mounting Recommendation The backside of this package has to be grounded by soldering. The poor soldering will cause the electrical and thermal performance degradation. Toshiba recommends following reflow soldering profile. Temp (degC) Ramp rate 6degC/Sec < 10 - 40 T(max) < 235 degC < 120 183 degC 150 120 -180 100 Ramp rate 6degC/Sec < Time (Sec) 3 www..com RF Performances P1dB,G1dB,IDD[@Pin=-6dBm] - Frequency of TMD3438-1 @ VDD=7.5V,VGG=-5V P1dB(dBm) G1dB(dBm) 35 P1dB (dBm) G1dB (dBm) 33 IDD[@Pin=-6dBm] (mA) 600 34 590 IDD (mA)[@Pin=-6dBm] 580 32 570 31 560 30 550 29 540 28 530 27 520 26 510 25 3.3 3.4 3.5 3.6 f (GHz) 3.7 3.8 3.9 500 Po (dBm) 35 Po , IDD - Pin of TMD3438-1 @ VDD=7.5V,VGG=-5V IM3-Po of TMD3438-1 @ VDD=7.5V,VGG=-5V,delta f=5MHz IDD (mA) 1100 -20 30 f=3.4GHz Po (dBm) f=3.6GHz Po (dBm) f=3.8GHz Po (dBm) f=3.4GHz IDD (mA) f=3.6GHz IDD (mA) f=3.8GHz IDD (mA) f=3.4GHz IM3 (dBc) -25 1000 f=3.6GHz IM3 (dBc) f=3.8GHz IM3 (dBc) -30 25 900 -35 20 800 -40 15 700 IM3 (dBc) -45 10 600 -50 -55 5 500 -60 0 -15 -10 -5 Pin (dBm) 0 5 10 400 -65 -70 10 15 20 Po (dBm)[2-tone total] 25 30 4 |
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