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| www..com Pb Free Plating Product ISSUED DATE :2006/01/23 REVISED DATE : GT2531 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description N-CH BVDSS 16V N-CH RDS(ON) 58m N-CH ID 3.5A P-CH BVDSS -16V N-CH RDS(ON) 125m N-CH ID -2.5A The GT2531 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial surface mount applications. Features *Low Gate Change *Low On-resistance *RoHS Compliant Package Dimensions REF. A B C D E F Millimeter Min. 2.70 2.60 1.40 0.30 0 0 Max. 3.10 3.00 1.80 0.55 0.10 10 REF. G H I J K L Dimensions Millimeter 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Ratings N-channel P-channel Unit V V A A A W W/ : : 16 8 3.5 2.8 10 1.14 0.01 -16 8 -2.5 -2.0 -10 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range -55 ~ +150 Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Value 110 Unit : /W GT2531 Page: 1/7 ISSUED DATE :2006/01/23 REVISED DATE : N-Channel Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS / Tj Min. 16 0.2 - Typ. 0.01 9 7 0.6 2 6 11 17 3 360 50 40 1.4 Max. 1.0 100 1 25 58 70 85 12 580 2.0 Unit V V/ : V S nA uA Ua Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=5V, ID=3A VGS= 8V VDS=16V, VGS=0 VDS=12V, VGS=0 VGS=4.5V, ID=3A Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance 2 RDS(ON) - m VGS=2.5V, ID=2A VGS=1.8V, ID=1A ID=3A VDS=10V VGS=4.5V VDS=10V ID=1A VGS=5V RG=3.3 RD=10 VGS=0V VDS=15V f=1.0MHz f=1.0MHz Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg - nC ns pF Source-Drain Diode Parameter Forward On Voltage2 Symbol VSD Min. Typ. Max. 1.3 Unit V Test Conditions IS=0.9A, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in copper pad of FR4 board, t 5sec; 180 : /W when mounted on Min. copper pad. 2 GT2531 Page: 2/7 ISSUED DATE :2006/01/23 REVISED DATE : P-Channel Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS / Tj Min. -16 -0.2 - Typ. 0.01 5 6 0.8 2 7 20 23 24 370 70 60 8 Max. -1.0 100 -1 -25 125 155 200 10 600 12 Unit V V/ : V S nA uA uA Test Conditions VGS=0, ID=-250uA Reference to 25 : , ID=-1mA VDS=VGS, ID=-250uA VDS=-5V, ID=-2A VGS= 8V VDS=-16V, VGS=0 VDS=-12V, VGS=0 VGS=-4.5V, ID=-2A Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance 2 RDS(ON) - m VGS=-2.5V, ID=-1.6A VGS=-1.8V, ID=-1A ID=-2A VDS=-10V VGS=-4.5V VDS=-10V ID=-1A VGS=-5V RG=3.3 RD=10 VGS=0V VDS=-15V f=1.0MHz f=1.0MHz Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg - nC ns pF Source-Drain Diode Parameter Forward On Voltage2 Symbol VSD Min. Typ. Max. -1.3 Unit V Test Conditions IS=-0.9A, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in copper pad of FR4 board, t 5sec; 180 : /W when mounted on Min. copper pad. 2 GT2531 Page: 3/7 ISSUED DATE :2006/01/23 REVISED DATE : Characteristics Curve N-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode GT2531 Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 4/7 ISSUED DATE :2006/01/23 REVISED DATE : N-Channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics GT2531 Fig 12. Gate Charge Waveform Page: 5/7 ISSUED DATE :2006/01/23 REVISED DATE : P-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode GT2531 Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 6/7 ISSUED DATE :2006/01/23 REVISED DATE : P-Channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GT2531 Page: 7/7 |
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