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| MITSUBISHI Nch POWER MOSFET FS50KMJ-06F HIGH-SPEED SWITCHING USE FS50KMJ-06F OUTLINE DRAWING 10 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 6.5 0.3 3 0.3 0.75 0.15 2.54 0.25 2.54 0.25 2.6 0.2 4V DRIVE VDSS .................................................................................. 60V rDS (ON) (MAX) .............................................................. 14m ID ......................................................................................... 50A Integrated Fast Recovery Diode (TYP.) ............. 50ns GATE DRAIN SOURCE TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 60 20 50 200 50 50 200 30 -55 ~ +150 -55 ~ +150 4.5 0.2 Unit V V A A A A A W C C V g Mar. 2002 L = 10H AC for 1 minute, Terminal to case Typical value 2000 2.0 MITSUBISHI Nch POWER MOSFET FS50KMJ-06F HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IDSS IGSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25C) Test conditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 4V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 60 20 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 1.5 12 14 0.30 60 3850 580 320 19 80 360 160 1.0 -- 50 Max. -- -- 100 10 2.0 14 18 0.35 -- -- -- -- -- -- -- -- 1.5 4.17 -- Unit V V A A V m m V S pF pF pF ns ns ns ns V C/W ns Drain-source breakdown voltage Gate-source breakdown voltage Drain-source leakage current Gate-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 30V, ID = 25A, VGS = 10V, RGEN = RGS = 50 IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = -100A/s Mar. 2002 |
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