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| R N N-CHANNEL MOSFET JCS10N65T MAIN CHARACTERISTICS Package ID VDSS Rdson @Vgs=10V Qg UPS 9.5 A 650 V 0.95 34 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 20pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product Crss ( 20pF) dv/dt RoHS ORDER MESSAGE Order codes JCS10N65CT-O-C-N-B JCS10N65FT-O-F-N-B Halogen Free NO NO Device Weight 2.15 g(typ) 2.20 g(typ) Marking JCS10N65CT JCS10N65FT Package TO-220C TO-220MF Packaging Tube Tube 201010C 1/10 R JCS10N65T ABSOLUTE RATINGS (Tc=25) Parameter Drain-Source Voltage Drain Current Symbol Value JCS10N65CT JCS10N65FT 650 9.5* 6.0* 40* 30 713 9.5 17.8 4.5 178 1.43 -55+150 50 0.4 Unit VDSS ID T=25 T=100 IDM VGSS 650 9.5 6.0 40 V A A A V mJ A mJ V/ns W W/ -continuous 1 Drain Current - pulsenote 1 Gate-Source Voltage 2 EAS Single Pulsed Avalanche Energynote 2 1 Avalanche Currentnote 1 1 Repetitive Avalanche Currentnote 1 3 Peak Diode Recovery dv/dtnote 3 Power Dissipation IAR EAR dv/dt PD TC=25 -Derate above 25 TJTSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes TL 300 * *Drain current limited by maximum junction temperature 201010C 2/10 R JCS10N65T Tests conditions Min Typ Max Units Parameter Symbol ELECTRICAL CHARACTERISTICS Off -Characteristics Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss VDS=25V, VGS =0V, f=1.0MHZ 1610 2065 156 20 210 26 pF pF pF VGS(th) VDS = VGS , ID=250A 3.0 5.0 V BVDSS ID=250A, VGS=0V 650 V BVDSS/ ID=250A, referenced to 25 TJ VDS=650V,VGS=0V, TC=25 VDS=520V, IGSSF VDS=0V, TC=125 - 0.68 - V/ IDSS - - 1 10 100 A A nA VGS =30V IGSSR VDS=0V, VGS =-30V - - -100 nA RDS(ON) VGS =10V , ID=4.75A VDS = 40V, ID=4.75Anote 4 - 0.85 0.95 gfs - 8.2 - S 201010C 3/10 R JCS10N65T td(on) tr td(off) tf Qg Qgs Qgd VDS =480V , ID=9.5A VGS =10V note 45 VDD=300V,ID=9.5A,RG=25 note 45 68 91 ns ns ns ns nC nC nC ELECTRICAL CHARACTERISTICS Switching Characteristics Turn-On delay time Turn-On rise time Turn-Off delay time Turn-Off Fall time Total Gate Charge Gate-Source charge Gate-Drain charge 109 150 214 300 85 165 34 6.9 12 45 - Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse recovery time Reverse recovery charge VSD IS 9.5 A ISM - - 38 A VGS=0V, IS=9.5A - 1.05 - V trr Qrr VGS=0V, IS=9.5A (note 4) dIF/dt=100A/s - 425 4.31 - ns C THERMAL CHARACTERISTIC JCS10N65CT 0.7 62.5 Notes: 1Pulse width limited by maximum junction temperature 2L=14.5mH, IAS=9.5A, VDD=50V, RG=25 ,Starting TJ=25 3ISD 9.5A,di/dt 300A/s,VDDBVDSS, Starting TJ=25 4Pulse TestPulse Width 300s,Duty Cycle2 5Essentially independent of operating temperature Max JCS10N65FT 2.5 62.5 Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 1 2L=14.5mH, IAS=9.5A, VDD=50V, RG=25 , TJ=25 3ISD 9.5A,di/dt 300A/s,VDDBVDSS, TJ=25 4300s,2 5 Symbol Rth(j-c) Rth(j-A) Unit /W /W 201010C 4/10 R JCS10N65T ELECTRICAL CHARACTERISTICS (curves) Transfer Characteristics On-Region Characteristics VGS 15V 10V 9V 8V 7V 6.5V 6V 5.5V Bottom 5V Top 10 10 ID [A] ID [A] 150 1 25 1 Notes: 1. 250s pulse test 2. TC=25 0.1 Notes: 1.250s pulse test 2.VDS=40V 2 4 6 8 10 1 10 VDS [V] VGS [V] On-Resistance Variation vs. Drain Current and Gate Voltage 1.00 0.95 0.90 Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 RDS(on) [ ] IDR [A] 0.85 0.80 0.75 0.70 0.65 0.60 VGS=10V 25 1 150 VGS=20V Note :Tj=25 0 2 4 6 8 10 12 14 16 18 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Notes: 1. 250s pulse test 2. VGS=0V 1.0 1.1 1.2 1.3 ID [A] VSD [V] Capacitance Characteristics 3x10 3 Gate Charge Characteristics 12 Capacitance [pF] Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd 2x10 3 VDS=480V 10 VDS=300V VDS=120V 1x10 3 0 10 -1 V DS Drain-Source Voltage [V] 10 0 10 1 VGS Gate Source Voltage[V] 8 6 4 2 0 0 10 20 30 40 Qg Toltal Gate Charge [nC] 201010C 5/10 R JCS10N65T ELECTRICAL CHARACTERISTICS (curves) Breakdown Voltage Variation vs. Temperature 1.2 4.0 3.5 On-Resistance Variation vs. Temperature BVDS(Normalized) 1.1 3.0 RD(on)(Normalized) 2.5 2.0 1.5 1.0 0.5 0.0 -75 1.0 0.9 Notes: 1. VGS=0V 2. ID=250A -50 -25 0 25 50 75 100 125 150 Notes: 1. VGS=10V 2. ID=5A -50 -25 0 25 50 75 100 125 150 0.8 -75 Tj [] Tj [] Maximum Safe Operating Area For JCS10N65CT 10 2 Maximum Safe Operating Area For JCS10N65FT 10 2 Operation in This Area is Limited by RDS(ON) 10s Operation in This Area is Limited by RDS(ON) 10s ID Drain Current [A] 100s 1 ID Drain Current [A] 10 1ms 10ms 10 1 100s 1ms 10 0 10 -1 Note: 1 TC=25 2 TJ=150 3 Single Pulse 0 100ms DC 10 0 10ms Note: 1 TC=25 2 TJ=150 3 Single Pulse 0 100ms DC 10 10 3 -1 10 10 1 10 2 10 10 1 10 2 10 3 VDS Drain-Source Voltage [V] VDS Drain-Source Voltage [V] Maximum Drain Current vs. Case Temperature 10 8 ID Drain Current [A] 6 4 2 0 25 50 75 100 125 150 TC Case Temperature [ ] 201010C 6/10 R JCS10N65T Transient Thermal Response Curve For JCS10N65CT 1 ELECTRICAL CHARACTERISTICS (curves) (t) Thermal Response D = 0 .5 0 .1 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 N 1 2 3 o te s : Z J C (t)= 0 .7 /W M a x D u ty F a c to r , D = t1 /t2 T J M -T c = P D M * Z J C(t) JC Z P 0 .0 1 DM s in g le p u ls e t1 t2 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ] Transient Thermal Response Curve For JCS10N65FT (t) Thermal Response D = 0 .5 0 .2 0 .1 0 .0 5 N 1 2 3 o te s : Z J C (t)= 2 .5 /W M a x D u ty F a c to r , D = t1 /t2 T J M -T c = P D M * Z J C(t) 1 0 .1 0 .0 2 0 .0 1 JC s in g le p u ls e Z P DM t1 t2 0 .0 1 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ] 201010C 7/10 R JCS10N65T Unitmm PACKAGE MECHANICAL DATA TO-220C 201010C 8/10 R JCS10N65T Unitmm PACKAGE MECHANICAL DATA TO-220MF 201010C 9/10 R JCS10N65T NOTE 1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 1. 2. 3. 4. 99 132013 86-432-64678411 86-432-64665812 www.hwdz.com.cn 99 132013 86-432-64675588 64675688 64678411-3098/3099 : 86-432-64671533 CONTACT JILIN SINO-MICROELECTRONICS CO., LTD. ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel 86-432-64678411 Fax86-432-64665812 Web Sitewww.hwdz.com.cn MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411-3098/3099 Fax: 86-432-64671533 201010C 10/10 |
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