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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR.
B
MPSA13/14
EPITAXIAL PLANAR NPN TRANSISTOR
C
A
N K D E G
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VCBO VCES VEBO IC PC Tj Tstg RATING 30 30 10 500 625 150 -55 150 UNIT V V
M
H
F
F
V mA mW
L
1
2
3
C
DIM A B C D E F G H J K L M N
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00
J
1. EMITTER 2. BASE 3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector-Emitter Breakdown Voltage Emitter Cut-off Current Emitter Cut-off Current MPSA13 DC Current Gain MPSA14 MPSA13 MPSA14 Collector-Emitter Saturation Voltage Base-Emitter Voltage Current Gain Bandwith Product hFE
)
TEST CONDITION IC=0.1mA VCB=30V VEB=10V IC=10mA, VCE=5V MIN. 30 5,000 10,000 10,000 20,000 125 TYP. MAX. 100 100 1.5 2.0 V V MHz UNIT V nA nA
SYMBOL VCES ICBO IEBO
IC=100mA, VCE=5V VCE(sat) VBE fT IC=100mA, IB=0.1mA IC=100mA, VCE=5V IC=10mA, f=100MHz, VCE=5V
2000. 2. 26
Revision No : 3
1/2
MPSA13/14
h FE - I
200K DC CURRENT GAIN h FE 100K 50K 30K
C
f T - IC
TRANSITION FREQUENCY f T (MHz) 500
VCE =5V VCE =5V
300
100
10K 5K 3K 1 3 10 30 100 300 1K COLLECTOR CURRENT I C (A)
50 30 1 3 5 10 30 50 100 COLLECTOR CURRENT I C (mA)
V BE (sat), VCE (sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VBE (sat), VCE (sat) (V) COLLECTOR CURRENT I C (mA) 5 3
I C =1000I B
I C - V BE
200 100 50 30
VCE =5V
VBE (sat)
1 0.5 0.3 0.2 5 10
VCE (sat)
10 5 3 1
30
50
100
300 500
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
COLLECTOR CURRENT I C (mA)
BASE-EMITTER VOLTAGE V BE (V)
2000. 2. 26
Revision No : 3
2/2

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