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PHOTODIODE
Si photodiode
S2592/S3477 series
Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR
S2592/S3477 series sensors combine a UV to near infrared Si photodiode with a thermoelectric cooler. A thermistor is also included in the same package to sense the Si photodiode chip temperature. This allows stable operation over long periods of time, making these sensors suitable for low-light-level detection where a high S/N is required. S2592 series is hermetically sealed in a TO-8 package, and S3477 series in a TO-66 package. A dedicated temperature controller (C1103-04) and heatsink (A3179 series) are also available as options (sold separately).
Features
Applications
l High S/N l High UV sensitivity l Built-in thermistor allows stable operation
l Low-light-level detection
s General ratings
Parameter Built-in photodiode Window material Active area Package S2592-03 S3477-03 S2592-04 S1336 series Sapphire glass 2.4 x 2.4 TO-8 TO-66 TO-8 5.8 x 5.8 TO-66 S3477-04 Unit mm
s Absolute maximum ratings
Parameter Symbol Reverse voltage VR Operating temperature Topr Storage temperature Tstg Allowable current for Ite thermoelectric cooler T h er mistor po w er dissipation Pth Value 5 -40 to +70 -55 to +85 1.5 0.2 Unit V C C A mW
s Electrical and optical characteristics (Typ. Ta=25 C)
Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Short circuit current Dark current Temperature coefficient of dark current Rise time Terminal capacitance Shunt resistance Noise equivalent power Cooling temperature Symbol Condition p S =p 100 lx, 2856 K Isc ID VR=10 mV TCID tr Ct Rsh NEP T VR=0 V, RL=1 k VR=0 V VR=10 mV VR=0 V, =p 0.2 65 1 8.1 x 10-15 35 S2592-03 S3477-03 S2592-04 190 to 1100 960 0.5 5 10 1.15 1 380 0.4 1.3 x 10-14 28 25 S3477-04 Unit nm nm A/W A pA times/C s pF G W/Hz1/2 C
1
Si photodiode
s Spectral response
0.7 (Typ. Ta=25 C)
+1.5
S2592/S3477 series
(Typ. )
s Photo sensitivity temperature characteristic
0.6
TEMPERATURE COEFFICIENT (%/C)
PHOTO SENSITIVITY (A/W)
0.5 0.4 0.3 0.2 0.1
+1.0
+0.5
0
190
400
600
800
1000
-0.5 190
400
600
800
1000
WAVELENGTH (nm)
KSPDB0182EA
WAVELENGTH (nm)
KSPDB0053EB
s Shunt resistance vs. element temperature
(Typ. VR=10 mV) 1 T
s Cooling characteristics of TE-cooler
40 (Typ. Ta=25 C, thermal resistance of heatsink=3 C/W)
ELEMENT TEMPERATURE (C)
100 G 10 G S2592-03, S3477-03 1 G 100 M 10 M 1 M 100 k 10 k -20
20
SHUNT RESISTANCE
0
S2592 SERIES
S2592-04, S3477-04
-20
S3477 SERIES
-40
-60
0
20
40
60
80
0
0.4
0.8
1.2
1.6
ELEMENT TEMPERATURE (C)
KSPDB0183EA
CURRENT (A)
KSPDB0184EA
s Current vs. voltage characteristic of TE-cooler
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 (Typ. Ta=25 C, thermal resistance of heatsink=3 C/W)
s Thermistor temperature characteristic
106 (Typ.)
RESISTANCE ()
0 0.2 0.4 0.6 0.8 1.0 1.2
CURRENT (A)
105
104
103 -40
-20
0
20
VOLTAGE (V)
KSPDB0185EB
ELEMENT TEMPERATURE (C)
KIRDB0116EA
2
Si photodiode
s Dimensional outlines (unit: mm) S2592 series
15.3 0.2 14 0.2
S2592/S3477 series
1.5 0.2
WINDOW 10 0.2
0.45 LEAD 10.2 0.2
5.1 0.2
12 MIN.
DETECTOR (ANODE) DETECTOR (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR
PHOTOSENSITIVE SURFACE
5.1 0.2
6.4 0.2
KSPDA0133EA
S3477 series
32 MAX. 24.4 0.1
3.7 14 0.1
4.1 0.2
9.3
PHOTOSENSITIVE SURFACE
20 1
THERMISTOR THERMISTOR DETECTOR (ANODE) DETECTOR (CATHODE) TE-COOLER (-) TE-COOLER (+)
KSPDA0134EC
8.6 0.2
WINDOW 10 0.1
17 0.4
3
Si photodiode
S2592/S3477 series
C1103-04
Temperature controller for TE-cooled detector
By adjusting the current flowing through the thermoelectric cooler in a onestage or two-stage thermoelectrically cooled detector, C1103-04 maintains the detector element at a constant temperature. The cooling temperature can be easily set by using the control knob on the front panel.
s Accessories
Instruction manual 4-conductor cable (with a connector) A4372-05
s Specifications (common)
S etting e lem e nt te m perature -30 to +20 C Applicable detectors O ne-stage or two-stage therm oelectrically cooled detectors Temperature stability Within 0.1 C Tem perature control output current 1.2 A Max. Power supply 100 V 10 % * 50/60 Hz * Power consumption 30 VA Dimensions and weight 108 (W) x 87 (H) x 190 (D) mm/1.9 kg approx. Operating temperature +10 to +40 C Operating humidity Equal to or less than 90 % Storage temperature +10 to +40 C * Power requirement (AC line voltage) can be selected from among 100 V, 115 V and 230 V at the factory prior to shipping.
C1103-04
s Block diagram
TE-COOLED DETECTOR THERMISTOR COMPARATOR
AMP CIRCUIT
CURRENT CIRCUIT
TE-COOLED DETECTOR POWER SUPPLY
C1103-04 conforms to European EMC directives (89/336/EEC) and LVD (73/23/EEC).
AC INPUT
KACCC0143EA
KOTHC0005EA
Heatsink for TE-cooled detector (TO-8 package)
s Dimensional outlines (unit: mm)
0.4 0.3 *1 PHOTOSENSITIVE SURFACE *2 DETECTOR METAL PACKAGE 32 (4 x) 3.5
A3179
A3179 series heatsinks are designed for thermoelectrically cooled detectors having a 6-pin TO-8 package. Heat dissipation capacity for A3179 is about 35 C versus the ambient temperature 25 C.
32
26
3
3
46
40
60
BOTTOM SURFACE (REFERENCE POINT) OF DETECTOR METAL PACKAGE
32.6
Weight: 50 g approx. *1: When detector element is installed. *2: The position of the photosensitive surface differs according to the detector element used. Refer to the dimensional outline for the detector.
KIRDA0018EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
4
Cat. No. KSPD1003E06 Aug. 2006 DN

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