2.1 - 33 2.1 OMH410 dual 100 volt, 15 to 20 amp h-bridge with current and temperature sensing in a low profile plastic package 4 11 r0 dual, low voltage, low r ds(on) , mosfet h-bridge circuit in a plastic package features ? h-bridge configuration ? zener gate protection ? 10 m shunt resistor ? 2 linear thermal sensors, one for each bridge ? isolated package ? output currents up to 20 amps description this series of mosfet switches is configured as a dual h-bridge with common v dd lines, precision series shunt resistor in the source line, and sensing elements to monitor the substrate temperature of each switch. this device is ideally suited for stepping motor control applications where size, performance, and efficiency are key. maximum ratings (t c = @ 25c) part v ds r ds(on) i d package number (volts) (m ) (amps) OMH410 100 58 15 mp-3
2.1 - 34 OMH410 2.1 electrical characteristics: OMH410 (t c = 25 unless otherwise specified) characteristic symbol min. typ. max. unit off characteristics drain-source breakdown voltage, i d = 250 a, v gs = 0 v (br)dss 100 - - v zero gate voltage drain current = v gs , v ds = max. rat. i dss - - 10 a v ds = max. rat. x 0.8, t c = 70c - - 100 a gate-body leakage, v gs = 12 v i gss - - 500 na on characteristics gate-threshold voltage, v ds = v gs , i d = 250 a v gs(th) 2.0 - 4.0 v static drain-source on-resistance, v gs = 10 vdc, i d = 9.0 a r ds(on) - - 0.058 static drain-source on-resistance t c = 70c - - 0.1 on state drain current, v ds > i d(on) x r ds(on) max., v gs = 10 v i d(on) 15--a dynamic characteristics forward transconductance, v ds > i d(on) x r ds(on) max., i d = 9.0a g fs 9.0 - - mho input capacitance v ds = 25 v, c iss - - 2600 pf output capacitance v gs = 0, c oss - - 910 pf reverse transfer capacitance f = 1.0 mhz c rss - - 350 pf switching characteristics turn-on delay time t d(on) - - 35 ns rise time v dd = 100 v, i d = 15 a, t r - - 290 ns turn-off delay time r gs = 10 , v gs = 10 v t d(off) - - 85 ns fall time t f - - 120 ns source drain diode characteristics source - drain current i sd --14a source - drain current pulsed i sdm * - -56a forward on-voltage, i sd = 28 a, v gs = 0 v sd - - 2.5 v reverse recovery time i sd = 13 a, di/dt = 100 a/sec t rr - 133 - ns reverse recovered charge q rr - 0.85 - c resistor characteristics resistor tolerance r s 9.0 10 11 m temperature coefficient, -40c to +70c t cr - 100 - ppm * indicates pulse test 300 sec, duty cycle 1.5%
2.1 - 35 OMH410 absolute maximum ratings (t c = 25c unless otherwise noted) drain source voltage, v ds ...................................... 100 v drain-gate (r gs = 1m ), v dgr ................................... 100 v continuous drain current, i d @ t c = 25c ..........................15 a continuous drain current, i d @ t c = 70c ..........................11 a pulse drain current i dm (1) ....................................... 110 a maximum power dissipation, p d @ t c = 25c (2) ....................33 w maximum power dissipation, p d @ t c = 70c (2) ....................18 w linear derating factor, junction-to-case ...................... 0.33 w/c thermal resistance, junction-to-case ......................... 3.0 c/w sense resistor ............................................... 0.010 notes: (1) pulse test: pulse width 300 sec. duty cycle 1.5%. (2) maximum junction temperature = 125c. 2.1 q1 r1 z1 q3 r3 z3 q5 r5 z5 q2 r2 z2 q4 r4 z4 q6 r6 z6 q7 r7 z7 q8 r8 z8 ptc 1 ptc 2 rs rs 7 6 5 8 11 12 13 9 16 10 21 22 14 15 20 19 17 34 32 26 31 30 29 28 24 25 27 1 2 34 33 23 18 schematic
OMH410 2.1 205 craw ford street, leominster, ma 01453 usa (508) 534-5776 fax (508) 537-4246 mechanical outline .360 .180 .020 .360 max. 2.000 1.350 .150 (4) plcs. 4.000 3.000 .150 .500 .500 .250 .250 .600 .325 .050 (34) plcs. .300 2.450 .135 pin 1: gate q2 pin 2: source q2 pin 3: ptc 1 pin 4: ptc 1 pin 5: gate q4 pin 6: source q4 pin 7: sense r 1 pin 8: sense r 1 pin 9: gate q6 pin 10: source q6 pin 11: return sense pin 12: return pin 13: return pin 14: gate q8 pin 15: source q8 pin 16: sense r 2 pin 17: sense r 2 pin 34: gate q1 pin 33: source q1 pin 32: output q1, q2 pin 31: gate q3 pin 30: source q3 pin 29: v m pin 28: v m pin 27: v m pin 26: output q3, q4 pin 25: gate q5 pin 24: source q5 pin 23: output q5, q6 pin 22: +ptc pin 21: -ptc pin 20: gate q7 pin 19: source q7 pin 18: output q7, q8 1 contact factory for lead bending options. mounting recommendations: maximum mounting torque: 3.0 mn. the module must be attached to a flat heat sink (flatness 100m maximum).
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