ST3414 n channel enhancement mode mosfet 4.0a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com ST3414 2006. v1 description ST3414 is the n-channel logic enhancement mo de power field effect transistor which is produced using high cell density, dm os trench technology.this high density process is especially tailored to minimize on-state resistance .these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. the product is in a very small outline surface mount package. pin configuration sot-23-3l 1.gate 2.source 3.drain part marking sot-23-3l y: year code a: week code ordering information part number package part marking ST3414s23rg sot-23 14ya week code : a ~ z ; a ~ z ST3414s23rg : s23 : sot23-3l r : tape reel ; g : pb ? free feature z 20v/4.2a, r ds(on) = 40m ( typ.) @vgs = 4.5v z 20v/3.4a, r ds(on) = 55 m @vgs = 2.5v z 20v/2.8a, r ds(on) = 75 m @vgs = 1.8v z super high density cell design for extremely low r ds(on) z exceptional on-resistance and maximum dc current capability z sot-23-3l package design 3 1 2 d g s 3 1 2 14ya
ST3414 n channel enhancement mode mosfet 4.0a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com ST3414 2006. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain-source voltage v dss 20 v gate-source voltage v gss 12 v continuous drain currenttj=150 ) t a =25 t a =70 i d 4.0 3.2 a pulsed drain current i dm 30 a continuous source current (diode conduction) i s 1.6 a power dissipation t a =25 t a =70 p d 1.25 0.8 w operation junction temperature t j -55/150 storgae temperature range t stg -55/150 thermal resistance-j unction to ambient r ja 125 /w
ST3414 n channel enhancement mode mosfet 4.0a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com ST3414 2006. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua 20 v gate threshold voltage v gs(th) v ds =vgs,i d =250ua 0.40 1.0 v gate leakage current i gss v ds =0v,v gs = 12v 100 na v ds =20v,v gs =0v 1 zero gate voltage drain current i dss v ds =20v,v gs =0v t j =55 5 ua on-state drain current i d(on) v ds R 5v,v gs =4.5v 6 a drain-source on-resistance r ds(on) v gs =4.5v,i d =4.2a v gs =2.5v,i d =3.4a v gs =1.8v,i d =2.8a 0.040 0.055 0.075 forward transconductance g fs v ds =5v,i d =3.6v 10 s diode forward voltage v sd i s =1.6a,v gs =0v 0.8 1.2 v dynamic total gate charge q g 4.8 8 gate-source charge q gs 1.0 gate-drain charge q gd v ds =10v v gs =4.5v i d =2.8a 1.0 nc input capacitance c iss 485 output capacitance c oss 85 reverse transfer capacitance c rss v ds =6v v gs =0v f=1mh z 40 pf 8 14 turn-on time t d(on) tr 12 18 30 35 turn-off time t d(off) tf v dd =6v r l =6 i d =1.0a v gen =4.5v r g =6 12 16 ns
ST3414 n channel enhancement mode mosfet 4.0a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com ST3414 2006. v1 typical characterictics (25 unless noted)
ST3414 n channel enhancement mode mosfet 4.0a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com ST3414 2006. v1 typical characterictics (25 unless noted )
ST3414 n channel enhancement mode mosfet 4.0a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com ST3414 2006. v1 sot-23-3l package outline
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