ghz technology inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) described herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory. ghz technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 0510-10 10 watts, 28 volts, class ab milcom 500 - 1000 mhz general description the 0510-10 is a double input matched common emitter broadband transistor specifically intended for use in the 500-1000 mhz frequency band. it may be operated in class ab or c. gold metallization and silicon diffused resistors ensure ruggedness and high reliability. case outline 55ct, style 2 absolute maximum ratings maximum power dissipation @ 25 c 30 watts o maximum voltage and current bvces collector to emiter voltage 50 volts bvebo emitter to base voltage 4.0 volts ic collector current 1.0 a maximum temperatures storage temperature - 65 to +150 c o operating junction temperature +200 c o electrical characteristics @ 25 c o symbol characteristics test conditions min typ max units pout pin pg h c vswr power output power input power gain efficiency load mismatch tolerance f = 1000 mhz vcc = 28 volts 10 50 1.5 0.8 3:1 watts watts db % bvebo bvces bvceo bvcbo icbo cob h fe q jc emitter to base breakdown collector to emitter breakdown collector to emitter breakdown collector to base breakdown collector to base current output capacitance dc - current gain thermal resistance ie = 5 ma ic = 50 ma ie = 50 ma ic = __ ma vc = __ volts vcb = 28 v, f = 1 mhz vce = 5 v, ic = 200 ma 4.0 50 29 10 11 60 volts volts volts volts ma pf c/w o initial issue june, 1994
0510-10
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