1 silicon mos fets (small signal) unit: mm 2SJ146 silicon p-channel mos fet for switching n features l high-speed switching l mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. n absolute maximum ratings (ta = 25c) parameter drain to source breakdown voltage gate to source voltage drain current max drain current allowable power dissipation channel temperature storage temperature symbol v dss v gso i d i dp p d t ch t stg ratings - 50 - 8 - 100 - 200 150 150 - 55 to +150 unit v v ma ma mw c c n electrical characteristics (ta = 25c) parameter drain to source cut-off current gate to source leakage current drain to source breakdown voltage gate threshold voltage forward transfer admittance drain to source on-resistance input capacitance (common source) output capacitance (common source) reverse transfer capacitance (common source) turn-on time turn-off time symbol i dss i gss v dss v th | y fs | r ds(on) c iss c oss c rss t on * t off * conditions v ds = - 30v, v gs = 0 v gs = - 8v, v ds = 0 i d = - 100 m a, v gs = 0 v ds = - 5v, i d = - 100 m a v ds = - 10v, i d = - 10ma, f = 1khz v gs = - 5v, i d = - 10ma v ds = - 5v, v gs = 0, f = 1mhz v dd = - 5v, v gs = 0 to - 5v, r l = 400 w v dd = - 5v, v gs = - 5 to 0v, r l = 400 w * t on , t off measurement circuit min - 50 - 1.5 8 typ 13.5 unit m a m a v v ms w pf pf pf ns ns 1: gate jedec: to-236 2: source eiaj: sc-59 3: drain mini type package (3-pin) marking symbol: 4d 2.8 +0.2 C0.3 1.5 +0.25 C0.05 0.650.15 0.650.15 3 1 2 0.95 0.95 1.90.2 0.4 +0.1 C0.05 1.1 +0.2 C0.1 0.8 0.40.2 0 to 0.1 0.16 +0.1 C0.06 1.45 0.1 to 0.3 2.9 +0.2 C0.05 max - 10 - 1 - 3.5 150 13 7 3 40 60 v out v dd = C 5v v gs = C 5v 50 w 400 w 100 m f 90% 10% v in v out 10% 90% t on t off
2 silicon mos fets (small signal) p d ? ta i d ? v ds | y fs | ? v gs c iss , c oss , c rss ? v ds i d ? v gs r ds(on) ? v gs v in ? i o 2SJ146 0 160 40 120 80 140 20 100 60 0 240 200 160 120 80 40 ambient temperature ta ( ?c ) allowable power dissipation p d ( mw ) 0 C12 C10 C8 C2 C6 C4 0 C60 C50 C40 C30 C20 C10 v gs =C5.5v C5.0v C4.5v C3.5v C2.5v C2.0v C3.0v C4.0v ta=25?c drain to source voltage v ds ( v ) drain current i d ( ma ) 0 ?2 ?0 ? ? ? ? 0 24 20 16 12 8 4 v ds =?0v f=1khz ta=25?c gate to source voltage v gs ( v ) forward transfer admittance |y fs | ( ms ) ? ?0 ?00 ?000 ? ?0 ?00 0 12 10 8 6 4 2 v gs =0 f=1mhz ta=25?c c iss c oss c rss drain to source voltage v ds ( v ) input capacitance ( common source ) , output capacitance ( common source ) , reverse transfer capacitance ( common source ) c iss ,c oss ,c rss ( pf ) 0 C12 C10 C8 C2 C6 C4 0 C120 C100 C80 C60 C40 C20 ta=C25?c 25?c 75?c v ds =C5v gate to source voltage v gs ( v ) drain current i d ( ma ) 0 ?2 ?0 ? ? ? ? 0 240 200 160 120 80 40 i d =?0ma ta=25?c ta=75?c 25?c ?5?c gate to source voltage v gs ( v ) drain to source on-resistance r ds(on) ( w ) C 0.1 C1 C10 C100 C 0.3 C3 C30 C 0.1 C 0.3 C1 C3 C10 C30 C100 C300 C1000 v o =C5v ta=25?c output current i o ( ma ) input voltage v in ( v )
|
