absolute maximum ratings parameter units i d @ v gs = 10v, t c = 25c continuous drain current 20* i d @ v gs = 10v, t c = 100c continuous drain current 20* i dm pulsed drain current ? 80 p d @ t c = 25c max. power dissipation 50 w linear derating factor 0.4 w/c v gs gate-to-source v oltage 20 v e as single pulse avalanche energy ? 71 mj i ar avalanche current ? 20 a e ar repetitive avalanche energy ? 5.0 mj dv/dt p eak diode recovery dv/dt ? 1.6 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063in./1.6mm from case for 10s) weight 4.3 (typical) g o c a 02/07/03 www.irf.com 1 product summary part number bv dss r ds(on) i d IRF7YSZ44VCM 60v 0.0195 ? 20a* for footnotes refer to the last page hexfet ? power mosfet IRF7YSZ44VCM thru-hole (low-ohmic to-257aa) 60v, n-channel seventh generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. these devices are well-suited for applications such as switching power supplies, motor controls, invert- ers, choppers, audio amplifiers and high-energy pulse circuits. features: low r ds(on) avalanche energy ratings dynamic dv/dt rating simple drive requirements ease of paralleling hermetically sealed light weight low ohmic to-257aa * current is limited by package pd - 94603
IRF7YSZ44VCM 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 60 ? ? v v gs = 0v, i d = 250 a ? bv dss / ? t j temperature coefficient of breakdown ? 0.064 ? v/c reference to 25c, i d = 250 a voltage r ds(on) static drain-to-source on-state ? ? 0.0195 ? v gs = 10v, i d = 20a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 250 a g fs forward transconductance 17 ? ? s ( )v ds =15v, i ds = 20a ? i dss zero gate voltage drain current ? ? 25 v ds = 60v ,v gs =0v ? ? 250 v ds = 48v, v gs = 0v, t j =125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 50 v gs =10v, i d = 20a q gs gate-to-source charge ? ? 18 nc v ds = 48v q gd gate-to-drain (?miller?) charge ? ? 25 t d (on) turn-on delay time ? ? 20 v dd = 30v, i d = 20a, t r rise time ? ? 120 v gs = 10v, r g = 9.1 ? t d (off) turn-off delay time ? ? 60 t f fall time ? ? 90 l s + l d total inductance ? 6.8 ? measured from drain lead (6mm/ 0.25in. from package ) to source lead (6mm/0.25in. from pacakge lc iss input capacitance ? 1730 ? v gs = 0v, v ds = 25v c oss output capacitance ? 375 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 60 ? na ? ? nh ns a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 2.5 c/w note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 20* i sm pulse source current (body diode) ? ?? 80 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 20a, v gs = 0v ? t rr reverse recovery time ? ? 105 ns t j = 25c, i f = 20a, di/dt 100a/ s q rr reverse recovery charge ? ? 220 nc v dd 25v ? t on forward tu rn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a * current is limited by package
www.irf.com 3 IRF7YSZ44VCM fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 20a 4 4.5 5 5.5 6 6.5 7 7.5 8 v gs , gate-to-source voltage (v) 1.0 10 100 i d , drain-to-source current ( ) v ds = 25v 20 10 0.1 1 10 100 1 10 100 1000 0 1 10 .0 .0 .0 . .0 . . 0.1 1 10 100.0 1 10 100 1000 0 10 1 10 .0 .0 .0 . .0 . .
IRF7YSZ44VCM 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 1.0 10 100 i sd , reverse drain current ( ) v gs = 0v t j = 150c t j = 25c 1 10 100 v ds , drain-to-source voltage (v) 0 500 1000 1500 2000 2500 3000 c, capacitance (pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) tc = 25c tj = 150c single pulse 1ms 1 0ms operation in this area limited by r ds (on) 100s 0 5 10 15 20 25 30 35 40 q g total gate charge (nc) 0 4 8 12 v gs , gate-to-source voltage (v) v ds = 48v v ds = 30v vds= 12v i d = 20a
www.irf.com 5 IRF7YSZ44VCM fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. + - v dd v gs v ds 90% 10% v gs t d(on) t r t d(off) t f 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. dut y factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse ( thermal response ) 25 50 75 100 125 150 0 10 20 30 40 t , case temperature ( c) i , drain current (a) c d limited by package
IRF7YSZ44VCM 6 www.irf.com fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge 10v r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v . v gs t p v (br)dss i as d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 25 50 75 100 125 150 0 30 60 90 120 150 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 9.0a 12.6a 20a
www.irf.com 7 IRF7YSZ44VCM ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 02/03 repetitive rating; pulse width limited by maximum junction temperature. i sd 20a, di/dt 310a/ s, v dd 60v, t j 150c pulse width 300 s; duty cycle 2% v dd = 25 v, starting t j = 25c, l= 0.35mh peak i as = 20a, v gs =10v, r g = 25 ? footnotes: 3.05 [.120] 0.13 [.005] 0.71 [.028] max. b 5.08 [.200] 4.83 [.190] 10.92 [.430] 10.42 [.410] 1.14 [.045] 0.89 [.035] 16.89 [.665] 16.39 [.645] 3 2 1 15.88 [.625] 12.70 [.500] 0.88 [.035] 0.64 [.025] ? 0.50 [.020] c a b 2x 3x ? 2.54 [.100] c 10.66 [.420] 10.42 [.410] a 13.63 [.537] 13.39 [.527] 3x ? 3.81 [.150] 3.56 [.140] not es : 1. dimens ioning & t olerancing pe r ans i y14.5m-199 4. 2. cont rolling dimens ion: inch. 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 4. outline conforms to jedec outline to-257aa. case outline and dimensions ? low-ohmic to-257aa pin assignments 3 = gat e 1 = drain 2 = s ource
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