STB9NC60 n - channel 600v - 0.5 w -9a d 2 pak/i 2 pak powermesh ? ii mosfet n typical r ds(on) = 0.5 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n gate charge minimized description the powermesh ? ii is the evolution of the first generation of mesh overlay ? . the layout refinements introduced greatly improve the ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. applications n high current, high speed switching n swith mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor driver ? internal schematic diagram january 2000 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 600 v v dgr drain- gate voltage (r gs =20k w ) 600 v v gs gate-source voltage 30 v i d drain current (continuous) at t c =25 o c9.0a i d drain current (continuous) at t c = 100 o c5.7a i dm ( ? ) drain current (pulsed) 36 a p to t total dissipation at t c =25 o c125w derating factor 1.0 w/ o c dv/dt( 1 ) peak diode recovery voltage slope 4.5 v/ns t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ? ) pulse width limited by safe operating area ( 1 )i sd 9a, di/dt 200 a/ m s, v dd v (br)dss ,tj t jmax type v dss r ds (on) i d STB9NC60 600 v < 0.75 w 9.0 a 1 2 3 1 3 i 2 pak to-262 (suffix o-1o) d 2 pak to-263 (suffix ot4o) 1/9
thermal data r thj-case thermal resistance junction-case max 1.0 o c/w r thj-amb r thc-sink t l thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 62.5 0.5 300 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 9a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =50v) 850 mj electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m av gs =0 600 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds = max r ating t c =125 o c 1 50 m a m a i gss gate-body leakage current (v ds =0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d = 250 m a 234v r ds(on) static drain-source on resistance v gs = 10v i d = 4 .5 a 0.6 0.75 w i d(on) on state drain current v ds >i d(on) xr ds(on)max v gs =10v 9.0 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =4.5a 10 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs = 0 1400 196 31 pf pf pf STB9NC60 2/9
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =300v i d =4.5a r g =4.7 w v gs =10v (resistive load, see fig. 3) 20 16 ns ns q g q gs q gd total gate charge gate-sou rce ch arge gate-drain charge v dd = 480 v i d =9.0a v gs =10v 55 4.5 31 77 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd =300v i d =4.5a r g =4.7 w v gs =10v (resistive load, see fig. 3) 64 32 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =480v i d =9.0a r g =4.7 w v gs =10v (inductive load, see fig. 5) 19 13 32 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sd m ( ? ) source-drain current source-drain current (pulsed) 9.0 36 a a v sd ( * )forwardonvoltage i sd =9a v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 9 a di/dt = 100 a/ m s v dd = 100 v t j = 150 o c (see test circu it, fig. 5) 600 4.7 15.5 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area safe operating area thermal impedance STB9NC60 3/9
output characteristics transconductance gate charge vs gate-source voltage transfer characteristics static drain-source on resistance capacitance variations STB9NC60 4/9
normalized gate threshold voltage vs temperature source-drain diode forward characteristics normalized on resistance vs temperature STB9NC60 5/9
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STB9NC60 6/9
dim. mm inch min. typ. max. min. typ. max. a 4.3 4.6 0. 169 0.1 81 a1 2. 49 2. 69 0. 098 0.1 06 b 0.7 0. 93 0. 027 0.0 36 b1 1.2 1. 38 0. 047 0.0 54 b2 1. 25 1.4 0. 049 0.0 55 c 0. 45 0.6 0. 017 0.0 23 c 2 1. 21 1. 36 0. 047 0.0 53 d 8.95 9.35 0.352 0.368 e 2.44 2.64 0.096 0.104 e 10 1 0.2 8 0. 393 0.4 04 l 13.2 13.5 0.519 0.531 l1 3. 48 3. 78 0. 137 0.1 49 l2 1. 27 1.4 0. 050 0.0 55 l l1 b2 b d e a c2 c a1 l2 e p011p5/c to-262 (i2pak) mechanical data STB9NC60 7/9
dim. mm inch min. typ. max. min. typ. max. a 4.3 4.6 0. 169 0.1 81 a1 2. 49 2. 69 0. 098 0.1 06 b 0.7 0. 93 0. 027 0.0 36 b2 1. 25 1.4 0. 049 0.0 55 c 0. 45 0.6 0. 017 0.0 23 c 2 1. 21 1. 36 0. 047 0.0 53 d 8.95 9.35 0.352 0.368 e 10 1 0.2 8 0. 393 0.4 04 g 4.88 5.28 0.192 0.208 l 15 1 5.8 5 0. 590 0.6 24 l2 1. 27 1.4 0. 050 0.0 55 l3 1.4 1. 75 0. 055 0.0 68 l2 l3 l b2 b g e a c2 d c a1 p011p6/c to-263 (d 2 pak) mechanical data STB9NC60 8/9
info rmatio nfur nished is be lieve dto be acc urate and relia ble. howeve r, stmicroelectronic s as sumes no respon sibili tyfor the co nseque nces of use of su ch inform atio n nor for any infr ingeme nt of paten ts or other rig hts of third parties which may result from its use. no licens e is gra nted by implic ation or othe rwise under any paten t or patent rig hts of stmicroele ctro nics. spec ificat ion mentioned in this pub licati on are subject to change withou t not ice. this pu blica tionsuperse desand repla ces all info rmat ion prev iousl ysuppli ed. stmicroelectr onicsproduct s are not au thorize dfor us e as critica l comp onents in life suppor tdev ices or syste ms without ex press written approva lof stmicroele ctronic s. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com . STB9NC60 9/9
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