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savantic semiconductor product specification silicon pnp power transistors 2SA770 2sa771 d escription with to-220 package complement to type 2sc1985/1986 low collector saturation voltage applications for general and industrial purpose applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2SA770 -60 v cbo collector- base voltage 2sa771 open emitter -80 v 2SA770 -60 v ceo collector- emitter voltage 2sa771 open base -80 v v ebo emitter-base voltage open collector -6 v i c collector current -6 a i b base current -3 a p c collector power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA770 2sa771 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2SA770 -60 v (br)ceo collector-emitter breakdown voltage 2sa771 i c =-25ma ,i b =0 -80 v v cesat collector-emitter saturation voltage i c =-3a; i b =-0.3a -1.0 v 2SA770 v cb =-60v; i e =0 i cbo collector cut-off current 2sa771 v cb =-80v; i e =0 -1.0 ma i ebo emitter cut-off current v eb =-6v; i c =0 -1.0 ma h fe dc current gain i c =-1a ; v ce =-4v 40 f t transition frequency i c =-0.5a ; v ce =-12v 10 mhz switching times t r rise time 0.9 s t stg storage time 1.0 s t f fall time i c =-3a ; v cc =-9v i b1 =-i b2 =-0.4a;r l =3 c 0.1 s
savantic semiconductor product specification 3 silicon pnp power transistors 2SA770 2sa771 package outline fig.2 outline dimensions(unindicated tolerance:0.10 mm)

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