1 power transistors 2SC5442, 2SC5442a silicon npn triple diffusion mesa type for horizontal deflection output n features l high breakdown voltage, and high reliability through the use of a glass passivation layer l high-speed switching l wide area of safe operation (aso) n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current base current collector power dissipation junction temperature storage temperature symbol v cbo v ces v ceo v ebo i cp i c i b p c t j t stg ratings 1500 1500 600 5 20 15 8 100 3.5 150 C55 to +150 unit v v v v a a a w ?c ?c t c =25 c ta=25 c n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency storage time fall time symbol i cbo i ebo h fe v ce(sat) v be(sat) f t t stg t f conditions v cb = 1000v, i e = 0 v cb = 1500v, i e = 0 v eb = 5v, i c = 0 v ce = 5v, i c = 7.5a i c = 7.5a, i b = 1.88a i c = 7.5a, i b = 1.88a v ce = 10v, i c = 0.1a, f = 0.5mhz i c = 7.5a, i b1 = 1.88a, i b2 = C3.76a min 5 typ 3 max 50 1 50 12 3 1.5 3.0 0.2 unit m a ma m a v v mhz m s m s 2SC5442 2SC5442a unit: mm 1:base 2:collector 3:emitter topC3l package 20.0 0.5 6.0 10.0 26.0 0.5 20.0 0.5 1.5 2.5 solder dip 10.9 0.5 123 2.0 0.3 3.0 0.3 1.0 0.2 5.0 0.3 3.0 4.0 2.0 5.45 0.3 0.6 0.2 1.5 2.7 0.3 1.5 2.0 f 3.3 0.2 3.0
2 power transistors 2SC5442, 2SC5442a p c ta v ce(sat) i c h fe i c area of safe operation (aso) area of safe operation, horizontal operation aso 0 160 40 120 80 140 20 100 60 0 250 200 150 100 50 (1) t c =ta (2) with a 100 100 2mm al heat sink (p c =12w) (3) without heat sink (p c =3.5w) (2) (3) (1) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 0.1 1 10 100 0 5000 4000 3000 2000 1000 i c /i b =4 t c =100?c 25?c ?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.001 100 1 0.01 10 0.1 1 100 10 v ce =5v t c =100?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe 1 10 100 1000 3 30 300 0.001 0.01 0.1 1 100 10 10ms 1ms t=100 s dc i cp i c collector to emitter voltage v ce ( v ) collector current i c ( a ) 0 2000 500 1500 1000 0 25 20 15 10 5 <1ma 2SC5442 2SC5442a f=64khz, t c <90?c area of safe operation with respect to the single pulse overload curve at the time of switching on, shutting down by the high voltage spark, holding down and like that, during horizontal operation. collector to emitter voltage v ce ( v ) collector current i c ( a )
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