j uly 2006 ? 2006 fairchild semiconductor corporation www.fairchildsemi.com fdy30 2 nz rev a fdy30 2 nz single n-channel 2.5v specified powertrench ? ? ? ? mosfet general description this single n-channel mosfet has been designed using fairchild semiconductors advanced power trench process to optimize the r ds(on) @v gs =2.5 v . applications ? li-ion battery pack features ? 600 ma, 20 v r ds(on) = 3 00 m ? @ v gs = 4.5 v r ds(on) =5 0 0 m ? @ v gs = 2.5 v ? esd protection diode (note 3) ? rohs compliant absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings unit s v ds drain-source voltage 20 v v gs gate-source voltage 12 v i d drain current C continuous (note 1a) 600 ma Cpulsed 1000 p d power dissipation (steady state) (note 1a) 625 mw (note 1b) 446 t j ,t stg operating and storage junction temperature range C55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 200 c/w r ja thermal resistance, junction-to-ambient (note 1b) 280 package marking and ordering information device marking device reel size tape width quantity e f d y 3 0 2 nz 7 8 mm 3 000 units fdy30 2 nz single n-channel 2.5v specified powertrench ? ? ? ? mosfet 1 2 3 g d s 1 s g d
fdy30 2 nz rev a www.fairchildsemi.co m electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drainCsource breakdown voltage v gs =0v, i d =250 a 20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 15 mv/ c i dss zero gate voltage drain current v ds =16v, v gs =0v 1 a v gs = 12 v, v ds =0v 10 a i gss gateCbody leakage, v gs = 4.5 v, v ds =0v 1 a on characteristics (note 2) v gs(th) gate threshold voltage v ds =v gs ,i d = 250 a 0.6 1.0 1.5 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 c 3 mv/ c r ds(on) static drainCsource onCresistance v gs =4.5v, i d =600ma v gs =2.5v, i d =500ma v gs =1.8v, i d =150ma v gs =4.5v,i d =600ma, t j =125 c 0.24 0.36 0.70 0.35 0. 3 0 0.5 0 1.2 0 1.00 ? g fs forward transconductance v ds =5v, i d =600ma 1.8 s dynamic characteristics c iss input capacitance 60 pf c oss output capacitance 20 pf c rss reverse transfer capacitance v ds =10v, v gs =0v, f=1.0mhz 10 pf switching characteristics (note 2) t d(on) turnCon delay time 6 12 ns t r turnCon rise time 8 16 ns t d(off) turnCoff delay time 8 16 ns t f turnCoff fall time v dd =10v, i d =1a, v gs =4.5v, r gen =6 ? 2.4 4.8 ns q g total gate charge 0.8 1.1 nc q gs gateCsource charge 0.16 nc q gd gateCdrain charge v ds =10v, i d =600ma, v gs =4.5v 0.26 nc drainCsource diode characteristics and maximum ratings v sd drainCsource diode forward voltage v gs =0v, i s =150ma (note 2) 0.7 1.2 v t rr diode reverse recovery time 8 ns q rr diode reverse recovery charge i f = 600 ma, di f /dt = 100 a/s 1nc notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 200c/w when mounted on a 1in 2 pad of 2 oz copper b) 280c/w when mounted on a minimum pad of 2 oz copper scale1:1onlettersizepaper 2 . pulse test: pulse width < 300 s, duty cycle < 2.0% 3. the diode connected between the gate and source serves only as protection againts esd. no gate overvoltage rating is implied. fdy30 2 nz single n-channel 2.5v specified powertrench ? ? ? ? mosfet
fdy30 2 nz rev a www.fairchildsemi.co m typical characteristics 0 0.2 0.4 0.6 0.8 1 0 0.25 0.5 0.75 1 v ds , drain-source voltage (v) i d , drain current (a) 2.5v 2.0v v gs =4.5v 3.0v 3.5v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 00.20.40.60.81 i d , drain current (a) r ds(on) ,normalized drain-source on-resistance v gs =2.0v 2.5v 3.5v 4.5v 3.0v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 600ma v gs =4.5v 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 12345 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 300ma t a =125 o c t a =25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 0.3 0.6 0.9 1.2 1.5 0.5 1 1.5 2 2.5 3 v gs , gate to source voltage (v) i d , drain current (a) t a =-55 o c 25 o c 125 o c v ds =5v 0.0001 0.001 0.01 0.1 1 0 0.2 0.4 0.6 0.8 1 1.2 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs =0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. fdy30 2 nz single n-channel 2.5v specified powertrench ? ? ? ? mosfet
fdy30 2 nz rev a www.fairchildsemi.co m typical characteristics 0 1 2 3 4 5 00.20.40.60.81 q g ,gatecharge(nc) v gs , gate-source voltage (v) i d = 600ma v ds =5v 15v 10v 0 10 20 30 40 50 60 70 80 90 100 0 4 8 121620 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f=1mhz v gs =0v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 10s 1s 100ms r ds(on) limit v gs =4.5v single pulse r ja = 280 o c/w t a =25 o c 10ms 1ms 0 5 10 15 20 25 30 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 280c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) * r ja r ja =280 c/w t j -t a =p*r ja (t) duty cycle, d = t 1 /t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1b. transient thermal response will change depending on the circuit board design. fdy30 2 nz single n-channel 2.5v specified powertrench ? ? ? ? mosfet
fdy30 2 nz rev a www.fairchildsemi.co m dimensional outline and pad layout notes: unless otherwise specified a) this package conforms to eiaj sc89 packaging standard. b) all dimensions are in millimeters. c) dimensions are exclusive of burrs, mold flash, and tie bar extrusions. 1.70 1.50 0.98 0.78 1.70 1.50 0.50 1.00 0.35 0.25 0.54 0.34 0.43 0.28 0.78 0.58 (0.15) 12 3 land pattern recommendation 1.80 0.50 1.14 0.50 0.50 0.66 see detail a 0.20 0.04 detail a scale 2 : 1 0.10 0.00 fdy30 2 nz single n-channel 2.5v specified powertrench ? ? ? ? mosfet
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