ipd640n06l g opti mos ? power-transistor features ? for fast switching converters and sync. rectification ? n-channel enhancement - logic level ? 175 c operating temperature ? avalanche rated ? pb-free lead plating, rohs compliant maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c 18 a t c =100 c 12 pulsed drain current i d,pulse t c =25 c 1) 72 avalanche energy, single pulse e as i d =18 a, r gs =25 ? 43 mj reverse diode d v /d t d v /d t i d =18 a, v ds =20 v, d i /d t =200 a/s, t j,max =175 c 6 kv/s gate source voltage v gs 20 v power dissipation p tot t c =25 c 47 w operating and storage temperature t j , t stg -55 ... 175 c iec climatic category; din iec 68-1 55/175/56 value 1) see figure 3 v ds 60 v r ds(on),max 64 m ? i d 18 a product summary type ipd640n06l g pg-to252-3 type ipd640n06l g package pg-to252-3 marking 640n06l rev. 1.4 page 1 2008-09-01
ipd640n06l g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 3.2 k/w smd version, device on pcb r thja minimal footprint - - 75 6 cm 2 cooling area 2) --50 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 60 - - v gate threshold voltage v gs(th) v ds = v gs , i d =16 a 1.2 1.6 2 zero gate voltage drain current i dss v ds =60 v, v gs =0 v, t j =25 c - 0.01 1 a v ds =60 v, v gs =0 v, t j =125 c - 1 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 10 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =18 a -4764 m v gs =4.5 v, i d =12 a -6485 gate resistance r g - 1.2 - transconductance g fs | v ds |>2| i d | r ds(on)max , i d =18 a 9.5 19 - s 2) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. values rev. 1.4 page 2 2008-09-01
ipd640n06l g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 350 470 pf output capacitance c oss - 94 130 reverse transfer capacitance c rss -3553 turn-on delay time t d(on) -68ns rise time t r -2538 turn-off delay time t d(off) -3248 fall time t f -3248 gate char g e characteristics 3) gate to source charge q gs - 1.4 1.9 nc gate charge at threshold q g(th) - 0.5 0.7 gate to drain charge q gd - 3.6 5.4 switching charge q sw - 4.5 6.5 gate charge total q g -1013 gate plateau voltage v plateau - 4.2 - v output charge q oss v dd =30 v, v gs =0 v -34 reverse diode diode continous forward current i s - - 18 a diode pulse current i s,pulse --72 diode forward voltage v sd v gs =0 v, i f =18 a, t j =25 c - 0.99 1.3 v reverse recovery time t rr -3045ns reverse recovery charge q rr -2030nc 3) see figure 16 for gate charge parameter definition v r =30 v, i f = i s , d i f /d t =100 a/s t c =25 c values v gs =0 v, v ds =30 v, f =1 mhz v dd =30 v, v gs =10 v, i d =15 a, r g =22 v dd =30 v, i d =18 a, v gs =0 to 10 v rev. 1.4 page 3 2008-09-01
ipd640n06l g 1 power dissipation 2 drain current p tot =f( t c ); v gs v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 1 10 0 10 -1 10 -2 t p [s] z thjc [k/w] 0 10 20 30 40 50 0 50 100 150 200 t c [c] p tot [w] 0 5 10 15 20 0 50 100 150 200 t c [c] i d [a] rev. 1.4 page 4 2008-09-01
ipd640n06l g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 3.5 v 4 v 4.5 v 5 v 5.5 v 10 v 0 20 40 60 80 100 120 0102030 i d [a] r ds(on) [m ] 25 c 175 c 0 5 10 15 20 25 30 012345 v gs [v] i d [a] 0 5 10 15 20 25 0 5 10 15 20 i d [a] g fs [s] 3 v 3.5 v 4 v 4.5 v 5 v 5.5 v 10 v 0 10 20 30 0123 v ds [v] i d [a] rev. 1.4 page 5 2008-09-01
ipd640n06l g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =18 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 20 40 60 80 100 120 140 160 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ] 16 a 160 a 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 100 1000 0 5 10 15 20 25 30 v ds [v] c [pf] 25 c 175 c 25 c 98% 175 c 98% 10 2 10 1 10 0 10 -1 0123 v sd [v] i f [a] rev. 1.4 page 6 2008-09-01
ipd640n06l g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 v gs =f( q gate ); i d =18 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 12v 30 v 48 v 0 2 4 6 8 10 12 024681012 q gate [nc] v gs [v] 50 55 60 65 70 75 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 150 c 1 10 100 1 10 100 1000 t av [s] i av [a] rev. 1. 4 page 7 2008-09-01
ipd640n06l g pg-to252-3: outline rev. 1.4 page 8 2008-09-01
rev. 1.4 page 9 2008-09-01 ipd640n06l g
|
