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mes1m32xxxxx high speed 32 mbit cmos s-ram module elisra microelectronics tel: 972-3-6175015 fax: 972-3-6175650 email: microel@elisra.com october 2003 rev. c 1 of 11 32mbit, 1mx32, 5v cmos s-ram module features module access times: 20, 35 & 45ns industrial and military screening package: 66-pin ceramic pga 1.385" sq package height 0.215"/ 0.160? organized as two banks of 512kx32 user configurable as : 1mx32, 2mx16 or 4mx8 single 5v (10%) power supply ttl compatible input/output product description the mes1m32 is a 32 megabit high speed static ram mcm. each mcm is constructed from 8 -512kx8 sram assembled in a multila yered cofired ceramic package, designed with power and ground planes for lower noise and better ground bounce. these mcms are available in 20 to 45ns versions. block diagram
mes1m32xxxxx high speed 32 mbit cmos s-ram module elisra microelectronics tel: 972-3-6175015 fax: 972-3-6175650 email: microel@elisra.com october 2003 rev. c 2 of 11 pin names truth table (h=v ih, l=v il, x=don't care) pin name pin function oe# we# cs# i/o mode a0 a19 address inputs x x h hi-z standby dq0 dq31 data inputs/outputs l h l d out read cs1# cs4# chip selects x l l d in write we1# we4# write enables h h l hi-z out disable oe# output enable gnd ground vcc power (+5v 10%) nc no connection note : # symbol means active low signal pin configuration for 66-pin pga (g1,g2) (top view) a b c f g h 1 dq8 we2# dq15 dq24 vcc dq31 2 dq9 cs2# dq14 dq25 cs4# dq30 3 dq10 gnd dq13 dq26 we4# dq29 4 a13 dq11 dq12 a6 dq27 dq28 5 a14 a10 oe# a7 a3 a0 6 a15 a11 a18 nc a4 a1 7 a16 a12 we1# a8 a5 a2 8 a17 vcc dq7 a9 we3# dq23 9 dq0 cs1# dq6 dq16 cs3# dq22 10 dq1 a19 dq5 dq17 gnd dq21 11 dq2 dq3 dq4 dq18 dq19 dq20
mes1m32xxxxx high speed 32 mbit cmos s-ram module elisra microelectronics tel: 972-3-6175015 fax: 972-3-6175650 email: microel@elisra.com october 2003 rev. c 3 of 11 absolute maximum ratings item rating supply voltage relative to gnd -0.5v to +7.0v voltage on any pin relative to gnd -0.5v to v cc +0.5v operating temperature -55 c to +125 c storage temperature -65 c to +150 c recommended operating conditions parameter symbol min max unit supply voltage v cc 4.5 5.5 v input high voltage v ih 2.2 v cc +0.3 v input low voltage v il -0.5 +0.8 v operating (military) t a -55 +125 c temperature (industrial) -40 +85 c capacitance (t a = +25 c, v in = 0v, f = 1.0 mhz) description symbol limits unit min max oe# capacitance c oe 20 pf we1# to we4# capacitance c we 20 pf cs1# to cs4# capacitance c cs 20 pf dq0 to dq31 capacitance c i/o 30 pf a0 to a19 capacitance c ad 20 pf these parameters are guar anteed, but not tested.
mes1m32xxxxx high speed 32 mbit cmos s-ram module elisra microelectronics tel: 972-3-6175015 fax: 972-3-6175650 email: microel@elisra.com october 2003 rev. c 4 of 11 dc characteristics (vcc = 5v) parameter symbol min max units input leakage current i li (1) -1 10 a output leakage current i lo (2) -1 10 a output low voltage v ol (3) 0.4 v output high voltage v oh (4) 2.4 v standby supply current i sb (5) 20ns 80 ma 45ns 60 dynamic operating current i cc (6) 20ns 300 ma (32 bit operation mode) 45ns 260 notes: (1) v cc = max, v i/o = v cc to gnd (2) v i/o = v cc to gnd, cs# v ih , oe# v ih (3) v cc = min, i ol = +8ma (4) v cc = min, i oh = -4ma (5) cs # = v ih , oe # = v ih , v cc = max, f = 5.0 mhz (6) v cc = max, cs# = v il, oe# = v ih, f = 5.0 mhz
mes1m32xxxxx high speed 32 mbit cmos s-ram module elisra microelectronics tel: 972-3-6175015 fax: 972-3-6175650 email: microel@elisra.com october 2003 rev. c 5 of 11 ac characteristics write cycle parameter symbol 20ns 35ns 45ns limits units write cycle time tavav 20 35 45 min ns address set-up time tavwl 0 0 0 min ns address valid to end of write tavwh 15 25 35 min ns data valid to end of write tdvwh 10 20 30 min ns chip select low to end of write telwh 15 25 35 min ns write pulse width twlwh 15 25 35 min ns address hold from write end twhax 2 2 2 min ns data hold time twhdx 0 0 0 min ns write low to high z twlqz * 13 15 15 max ns output active from end of write twhqx * 0 0 0 min ns read cycle parameter symbol 20ns 35ns 45ns limits units read cycle time tavav 20 35 45 min ns address access time tavqv 20 35 45 max ns output hold from address change tavqx 5 5 5 min ns chip select access time telqv 20 35 45 max ns output enable to output valid tglqv 12 25 35 max ns chip select to output in low z telqx * 3 4 4 min ns chip disable to output in high z tehqz * 10 15 15 max ns output enable to output in low z tglqx * 0 0 0 min ns output disable to output in high z tghqz * 10 15 15 max ns (*) - parameter is guaranteed, but not tested.
mes1m32xxxxx high speed 32 mbit cmos s-ram module elisra microelectronics tel: 972-3-6175015 fax: 972-3-6175650 email: microel@elisra.com october 2003 rev. c 6 of 11 timing waveforms of write cycle
mes1m32xxxxx high speed 32 mbit cmos s-ram module elisra microelectronics tel: 972-3-6175015 fax: 972-3-6175650 email: microel@elisra.com october 2003 rev. c 7 of 11 timing waveforms of read cycle
mes1m32xxxxx high speed 32 mbit cmos s-ram module elisra microelectronics tel: 972-3-6175015 fax: 972-3-6175650 email: microel@elisra.com october 2003 rev. c 8 of 11 ac test conditions item conditions input pulse levels gnd to 3.0v input rise and fall times 5ns input timing reference level 1.5v output timing reference level 1.5v output load: 17ns to 70ns 85ns and up 1 ttl load, cl=30pf 1 ttl load, cl=100pf note: for twhqx, twlqz, telqx, tehqz, tglqx and tghqz cl = 5pf
mes1m32xxxxx high speed 32 mbit cmos s-ram module elisra microelectronics tel: 972-3-6175015 fax: 972-3-6175650 email: microel@elisra.com october 2003 rev. c 9 of 11 outline drawing for 66-pin ceramic pga (g1)
mes1m32xxxxx high speed 32 mbit cmos s-ram module elisra microelectronics tel: 972-3-6175015 fax: 972-3-6175650 email: microel@elisra.com october 2003 rev. c 10 of 11 outline drawing for 66-pin thin ceramic pga (g2)
mes1m32xxxxx high speed 32 mbit cmos s-ram module elisra microelectronics tel: 972-3-6175015 fax: 972-3-6175650 email: microel@elisra.com october 2003 rev. c 11 of 11 ordering information (standard military screened products*) model number speed package mes1m32g120m 20ns cpga mes1m32g135m 35ns cpga mes1m32g145m 45ns cpga mes1m32g220m 20ns cpga mes1m32g235m 35ns cpga mes1m32g245m 45ns cpga (*) - contact elisra for additional designs part number breakdown

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