application low frequency power amplifier features low saturation voltage v ce(sat) 0.3 v large current capacitance i c = 5 a to?2 (1) 1. emitter 2. collector 3. base 3 2 1 table 1 absolute maximum ratings (ta = 25?) item symbol ratings unit collector to base voltage v cbo 40 v collector to emitter voltage v ceo 20 v emitter to base voltage v ebo 7v collector current i c 5a collector peak current ic(peak)* 8 a collector power dissipation p c 0.75 w junction temperature tj 150 ? storage temperature tstg ?5 to +150 ? note: * tc = 25?, pw 100?, duty cycle 1% 2SD2497 silicon npn epitaxial
table 2 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions collector to base breakdown v (br)cbo 40 v i c = 10 ?, voltage i e = 0 collector to emitter breakdown v (br)ceo 20 v i c = 1 ma, voltage r be = emitter to base breakdown v (br)ebo 7 vi e = 10 ? voltage i c = 0 collector to base cutoff current i cbo 0.1 ? v cb = 20 v, i e = 0 collector to emitter cutoff current i ceo 1 av ce = 10 v, r be = emitter to base cutoff current i ebo 0.1 ? v eb = 5 v, i c = 0 dc current transfer ratio h fe1 * 250 600 v ce = 2 v, i c = 0.5 a dc current transfer ratio h fe2 100 v ce = 2 v, i c = 5 a collector to emitter saturation v ce(sat) 0.3 v i c =3 a voltage i b = 0.1 a gain bandwidth product f t 230 mhz v ce = 6 v, i c = 50 ma collector output capacitance cob 30 pf v cb = 10 v i e = 0 f = 1 mhz 2SD2497
0.8 0.6 0.4 0.2 0 ambient temperature ta (?) collector power dissipation pc (w) 50 100 150 200 maximum collector power dissipation curve 5 4 3 2 1 0 collector to emitter voltage v (v) ce collector current i (a) c b i = 0 tc = 25 ? typical output characteristics 0.2 0.4 0.6 0.8 1 20 ma 18 ma 16 ma 14 ma 12 ma 10 ma 8 ma 6 ma 4 ma 2 ma 1.0 0.8 0.6 0.4 0.2 0 base to emitter voltage v (v) be collector current i (a) c typical transfer characteristics 0.2 0.4 0.6 0.8 1.0 v = 2 v ta=25? ce collector to emitter voltage v (v) ce collector current i (a) c 0.1 1 10 100 maximum safe operation area 20 10 2 5 1 0.2 0.5 0.1 0.02 0.05 0.2 0.5 2 5 20 50 1 ms ic(peak) dc operation ta = 25 ? 1 shot pulse i (max) c pw = 10 ms 2SD2497
10 100 1000 dc current transfer ratio h fe collector current i (a) c dc current transfer ratio vs. collector current 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 200 500 20 50 v = 2 v pulse test ce ta = ?5 ? 75 ? 25 ? collector to emitter saturation voltage ce(sat) v (v) collector current i (a) c base to emitter saturation voltage v (v) be(sat) saturation voltage vs. collector current 2 1 0.2 0.5 0.1 0.02 0.05 0.01 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 25 ? 75 ? ta = ?5 ? ta = ?5 ? 25 ? 75 ? ce(sat) v pulse test i = 20 i c b be(sat) v 1000 gain bandwidth product f (mhz) t collector current i (a) c gain bandwidth product vs. collector current pulse test v = 6 v ta=25? ce 100 10 20 50 200 500 0.01 0.02 0.05 0.1 0.2 0.5 1 collector to emitter saturation voltage ce(sat) v (v) 10 1 10 100 1000 collector to emitter saturation voltage vs. base current base current i (ma) b 2 5 1 0.2 0.1 0.05 0.5 2 5 20 50 200 500 c i = 5 a 2.5 a 1 a pulse test ta = 25 ? 2SD2497
collector output capacitance cob (pf) collector to base voltage v (v) cb 1 collector output capacitance vs. collector to base voltage 500 200 100 20 50 2 5 10 20 50 i = 0 f = 1 mhz e 10 2SD2497
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