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  jmnic product specification silicon npn power transistors 2N6372 2n6373 2n6374 description ? with to-66 package ? low collector saturation voltage ? excellent safe operating area applications ? designed for switching and wide-band amplifier applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit 2N6372 90 2n6373 70 v cbo collector-base voltage 2n6374 open emitter 50 v 2N6372 80 2n6373 60 v ceo collector-emitter voltage 2n6374 open base 40 v v ebo emitter-base voltage open collector 6 v i c collector current 6 a p d total power dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 4.37 ?? /w fig.1 simplified outline (to-66) and symbol
jmnic product specification 2 silicon npn power transistors 2N6372 2n6373 2n6374 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2N6372 80 2n6373 60 v ceo(sus) collector-emitter sustaining voltage 2n6374 i c =0.1a ;i b =0 40 v v cesat-1 collector-emitter saturation voltage i c =2a; i b =0.2a 0.7 v v cesat-2 collector-emitter saturation voltage i c =6a; i b =0.6a 1.2 v v besat-1 base-emitter saturation voltage i c =2a; i b =0.2a 1.2 v v besat-2 base-emitter saturation voltage i c =6a; i b =0.6a 2.0 v 2N6372 v ce =80v; i b =0 2n6373 v ce =60v; i b =0 i ceo collector cut-off current 2n6374 v ce =40v; i b =0 0.1 ma i cbo collector cut-off current v cb =rated v cb ; i e =0 10 | a i ebo emitter cut-off current v eb =6v; i c =0 0.1 ma 2N6372 i c =2a ; v ce =2v 2n6373 i c =2.5a ; v ce =2v h fe dc current gain 2n6374 i c =3a ; v ce =2v 20 100 f t transition frequency i c =0.5a;v ce =10v;f=1mhz 4 mhz
jmnic product specification 3 silicon npn power transistors 2N6372 2n6373 2n6374 package outline fig.2 outline dimensions


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