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| savantic semiconductor product specification silicon npn power transistors 2n6372 2N6373 2n6374 description with to-66 package low collector saturation voltage excellent safe operating area applications designed for switching and wide-band amplifier applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit 2n6372 90 2N6373 70 v cbo collector-base voltage 2n6374 open emitter 50 v 2n6372 80 2N6373 60 v ceo collector-emitter voltage 2n6374 open base 40 v v ebo emitter-base voltage open collector 6 v i c collector current 6 a p d total power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 4.37 /w fig.1 simplified outline (to-66) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2n6372 2N6373 2n6374 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2n6372 80 2N6373 60 v ceo(sus) collector-emitter sustaining voltage 2n6374 i c =0.1a ;i b =0 40 v v cesat-1 collector-emitter saturation voltage i c =2a; i b =0.2a 0.7 v v cesat-2 collector-emitter saturation voltage i c =6a; i b =0.6a 1.2 v v besat-1 base-emitter saturation voltage i c =2a; i b =0.2a 1.2 v v besat-2 base-emitter saturation voltage i c =6a; i b =0.6a 2.0 v 2n6372 v ce =80v; i b =0 2N6373 v ce =60v; i b =0 i ceo collector cut-off current 2n6374 v ce =40v; i b =0 0.1 ma i cbo collector cut-off current v cb =rated v cb ; i e =0 10 a i ebo emitter cut-off current v eb =6v; i c =0 0.1 ma 2n6372 i c =2a ; v ce =2v 2N6373 i c =2.5a ; v ce =2v h fe dc current gain 2n6374 i c =3a ; v ce =2v 20 100 f t transition frequency i c =0.5a;v ce =10v;f=1mhz 4 mhz savantic semiconductor product specification 3 silicon npn power transistors 2n6372 2N6373 2n6374 package outline fig.2 outline dimensions |
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