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the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor 2sk3113b switching n-channel power mos fet data sheet document no. d18061ej3v0ds00 (3rd edition) date published june 2007 ns printed in japan the mark data sheet d18061ej3v0ds 2 2sk3113b electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 600 v, v gs = 0 v 100 a gate leakage current i gss v gs = 30 v, v ds = 0 v 10 a gate cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 2.5 3.5 v forward transfer admittance note | y fs | v ds = 10 v, i d = 1.0 a 0.5 0.9 s drain to source on-state resistance note r ds(on) v gs = 10 v, i d = 1.0 a 3.2 4.4 input capacitance c iss v ds = 10 v 290 pf output capacitance c oss v gs = 0 v 75 pf reverse transfer capacitance c rss f = 1 mhz 7 pf turn-on delay time t d(on) v dd = 150 v, i d = 1.0 a 10.5 ns rise time t r v gs = 10 v 4.8 ns turn-off delay time t d(off) r g = 10 15.8 ns fall time t f r l = 10 10.5 ns total gate charge q g v dd = 450 v 7.9 nc gate to source charge q gs v gs = 10 v 2.7 nc gate to drain charge q gd i d = 2.0 a 3.2 nc body diode forward voltage note v f(s-d) i f = 2.0 a, v gs = 0 v 0.8 v reverse recovery time t rr i f = 2.0 a, v gs = 0 v 190 ns reverse recovery charge q rr di/dt = 50 a/ s 500 nc note pulsed test circuit 1 avalanche capability r g = 25 50 pg. l v dd v gs = 20 0 v bv dss i as i d v ds starting t ch v dd d.u.t. test circuit 3 gate charge test circuit 2 switching time pg. r g 0 v gs d.u.t. r l v dd = 1 s duty cycle 1% v gs wave form i d wave form v gs 10% 90% v gs 10% 0 i d 90% 90% t d(on) t r t d(off) t f 10% i d 0 t on t off pg. 50 d.u.t. r l v dd i g = 2 ma data sheet d18061ej3v0ds 3 2sk3113b typical characteristics (t a = 25c) derating factor of forward bias safe operating area total power dissipation vs. case temperature dt - percentage of rated power - % 040 20 60 100 140 80 120 160 100 80 60 40 20 0 t ch - channel temperature - c p t - total power dissipation - w 0 0 80 20 40 60 100 140 120 160 40 30 20 10 5 15 25 35 t c - case temperature - c forward bias safe operating area i d - drain current - a 0.01 0.1 1 10 100 1 10 100 1000 100 s 1 ms 10 ms i d(pulse) i d(dc) r ds(on) limited (at v gs = 10 v) pw = 10 s power dissipation limited tc = 25c, single pulse v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(ch-a) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 r th(ch-a) = 125c/w r th(ch-c) = 6.25c/w single pulse pw - pulse width ? s 100 1 m 10 m 100 m 1 10 100 1000 data sheet d18061ej3v0ds 4 2sk3113b drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 20 25 v gs = 10 v pulsed 8 v v ds - drain to source voltage - v i d - drain current - a 0.01 0.1 1 10 100 0 5 10 15 20 25 30 v ds = 10 v pulsed t ch = 125c 75c 25c ? 25c v gs - gate to source voltage - v gate cut-off voltage vs. channel temperature forward transfer admittance vs. drain current v gs(off) - gate cut-off voltage - v 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 0 50 100 150 v ds = 10 v i d = 1 ma t ch - channel temperature - c | y fs | - forward transfer admittance - s 0.01 0.1 1 10 0.01 0.1 1 10 v ds = 10 v pulsed t ch = ? 25c 25c 75c 125c i d - drain current - a drain to source on-state resistance vs. gate to source voltage drain to source on-state resistance vs. drain current r ds(on) - drain to source on-state resistance - 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 5 10 15 20 25 i d = 2.0 a 1.0 a pulsed v gs ? gate to source voltage - v r ds(on) - drain to source on-state resistance - 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.01 0.1 1 10 v gs = 10 v 20 v pulsed i d - drain current - a data sheet d18061ej3v0ds 5 2sk3113b drain to source on-state resistance vs. channel temperature source to drain diode forward voltage r ds(on) - drain to source on-state resistance - 0 2 4 6 8 10 -50 0 50 100 150 i d = 2.0 a 1.0 a v gs = 10 v pulsed t ch - channel temperature - c i f ? diode forward current - a 0.01 0.1 1 10 100 0.0 0.5 1.0 v gs = 10 v 0 v pu ls e d v f(s-d) ? source to drain voltage - v capacitance vs. drain to source voltage switching characteristics c iss , c oss , c rss - capacitance - pf 1 10 100 1000 0.1 1 10 100 c iss c oss c rss v gs = 0 v f = 1 mhz v ds - drain to source voltage ? v t d(on) , t r , t d(off) , t f - switching time - ns 1 10 100 1000 0.1 1 10 t r t d(off) t d ( on ) t f v dd = 150 v v gs = 10 v r g = 10 i d - drain current - a revwese recovery time vs. drain current dynamic input/output characteristics trr ? reverse recovery time - ns 10 100 1000 0.1 1 10 di/dt = 50 a/ s v gs = 0 v i d - drain current - a v ds ? drain to source voltage - v 0 100 200 300 400 500 600 0246810 0 1 2 3 4 5 6 7 8 9 10 i d = 2.0 a v dd = 450 v 300 v 150 v v ds v gs q g ? gate chage - nc v gs ? gate to source voltage - v data sheet d18061ej3v0ds 6 2sk3113b single avalanche current vs. inductive load single avalanche energy derating factor i as - single avalanche current - a 100 1 m 10 m 100 1.0 10 0.1 10 r g = 25 v dd = 150 v v gs = 20 0 v starting t ch = 25 ?c i as = 2.0 a e as = 2.7 mj l - inductive load - h energy derating factor - % 75 150 125 50 100 25 v dd = 150 v r g = 25 v gs = 20 0 v i as 2.0 a 0 20 40 60 80 100 120 starting t ch - starting channel temperature - c data sheet d18061ej3v0ds 7 2sk3113b package drawings (unit: mm) 1) to-251 (mp-3-a) 2) to-251 (mp-3-b) 6.6 0.2 mold area 2.3 0.1 0.5 0.1 0.76 0.1 0.5 0.1 no plating 5.3 typ. 0.7 typ. 6.1 0.2 1.8 0.2 9.3 typ. 4.0 min . 1.02 typ. 16.1 typ. 4.3 min. 1 4 23 1.14 max. 2.3 typ. 2.3 typ. 1. gate 2. drain 3. source 4. fin (drain) 1.gate 2.drain 3.source 4.fin (drain) 6.6?.2 2.3?.1 0.5?.1 0.76?.12 0.5?.1 5.3 typ. 2.3 typ. 2.3 typ. 1.14 max. 1.06 typ. 11.25 typ. 4.13 typ. 1.04 typ. 6.1?.2 1.1?.13 2 13 4 3) to-252 (mp-3zk) equivalent circuit 6.5 0.2 2.3 0.1 0.5 0.1 0.76 0.12 0 to 0.25 0.5 0.1 1.0 no plating no plating 5.1 typ. 1.0 typ. 6.1 0.2 0.51 min. 4.0 min . 0.8 10.4 max. (9.8 typ.) 4.3 min. 1 4 23 1.14 max. 2.3 2.3 1. gate 2. drain 3. source 4. fin (drain) source body diode gate protection diode gate drain remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protecti on circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2sk3113b the information in this document is current as of june, 2007. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec electronics data sheets or data books, etc., for the most up-to-date specifications of nec electronics products. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec electronics. nec electronics assumes no responsibility for any errors that may appear in this document. nec ele ctronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec electronics products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec electronics or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. nec electronics as sumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec electronics endeavors to enhance the quality, reliability and safety of nec electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. nec electronics products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to nec electronics products developed based on a customer- designated "quality assurance program" for a specific application. the recommended applications of an nec electronics product depend on its quality grade, as indicated below. customers must check the quality grade of each nec electronics product before using it in a particular application. the quality grade of nec electronics products is "standard" unless otherwise expressly specified in nec electronics data sheets or data books, etc. if customers wish to use nec electronics products in applications not intended by nec electronics, they must contact an nec electronics sales representative in advance to determine nec electronics' willingness to support a given application. (note) ? ? ? ? ? ? m8e 02. 11-1 (1) (2) "nec electronics" as used in this statement means nec electronics corporation and also includes its majority-owned subsidiaries. "nec electronics products" means any product developed or manufactured by or for nec electronics (as defined above). computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. "standard": "special": "specific": |
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