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copyright & copy;2000 shindengen electric mfg.co.ltd ratings shindengen outline dimensions unit : mm case : mto-3p absolute maximum ratings item symbol conditions ratings unit storage temperature tstg -55 1 50 junction temperature tj 1 50 collector to base voltage v cbo 1 200 v collector to emitter voltage v ceo 800 v emitter to base voltage v ebo 7v collector current dc i c 6a collector current peak i cp 1 2 base current dc i b 3 a base current peak i bp 6 total transistor dissipation p t tc = 25 1 00 w mounting torque tor (recommended torque : 0.5n ? m) 0.8 n ? m electrical characteristics (tc=25 ) item symbol conditions ratings unit collector to emitter sustaining voltage v ceo (sus) i c = 0.2a min 800 v collector cutoff current i cbo at rated voltage max 0. 1 ma i ceo max 0. 1 emitter cutoff current i ebo at rated voltage max 0. 1 ma dc current gain h fe v ce = 5v, i c = 3a min 8 h fel v ce = 5v, i c = 1 ma min 7 collector to emitter saturation voltage v ce (sat) i c = 3a max 1 .0 v base to emitter saturation voltage v be (sat) i b = 0.6a max 1 .5 v thermal resistance jc junction to case max 1 .25 /w transition frequency f t v ce = 1 0v, i c = 0.6a typ 8 mhz turn on time ton i c = 3a max 0.5 storage time ts i b 1 = 0.6a, i b2 = 1 .2a max 3.5 s fall time tf r l = 85 , v bb2 = 4v max 0.3 hfx series switching power transistor 6a npn 2sC4236 (t6w80hfx)
1 10 100 2sC4236 0.001 0.01 0.1 1 10 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 v ce = 5v 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 tc = 150 c 100 c 50 c 25 c 0 c - 25 c - 55 c h fe - i c 12 collector current i c [a] dc current gain h fe
0 0.5 1 1.5 2 2.5 3 2sC4236 0.01 0.1 1 0 0.5 1 1.5 2 2.5 3 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 i c = 0.75a 1.5a 3.0a 6.0a 9.0a 12a tc = 25 c saturation voltage i c = 0.75a 1.5a 3.0a 6.0a 9.0a 6 base current i b [a] collector-emitter voltage v ce [v] base-emitter voltage v be [v]
0.01 0.1 1 10 0 1 2 3 4 5 6 2sC4236 i b1 = 0.2i c i b2 = 0.4i c v bb2 = 4v v cc = 250v tc = 25 c t s t on t f switching time - i c collector current i c [a] switching time t sw [ m s]
0.01 0.1 1 10 0 50 100 150 200 250 300 2sC4236 i c = 3a i b1 = 0.6a i b2 = 1.2a v bb2 = 4v tc = 25 c t s t on t f switching time - v cc collector voltage v cc [v] switching time t sw [ m s]
0.01 0.1 1 10 0 50 100 150 2sC4236 i c = 3a i b1 = 0.6a i b2 = 1.2a v bb2 = 4v r l = 85 w t s t on t f switching time - tc case temperature tc [ c] switching time t sw [ m s]
0.01 0.1 1 10 0 1 2 3 4 5 6 2sC4236 i b1 = 0.2i c i b2 = 0.4i c v bb2 = 4v v ce (clamp) = 300v tc = 25 c t s t f + t vs t f l-load switching time - i c switching time t sw [ m s] collector current i c [a]
0.01 0.1 1 10 0 1 2 3 4 5 6 2sC4236 i b1 = 0.2i c i b2 = 0.4i c v bb2 = 4v v ce (clamp) = 300v tc = 100 c t s t f + t vs t f l-load switching time - i c (at high temperature) switching time t sw [ m s] collector current i c [a]
transient thermal impedance 0.001 0.01 0.1 1 10 2sC4236 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 time t [s] transient thermal impedance q jc(t) [ c/w]
forward bias soa 0.01 0.1 1 10 1 10 100 2sC4236 50 m s tc = 25 c single pulse 150 m s 1ms 10ms dc 12 800 collector-emitter voltage v ce [v] collector current i c [a] p t limit i s/b limit
0 20 40 60 80 100 0 50 100 150 2sC4236 collector current derating collector current derating [%] v ce = fixed p t limit i s/b limit case temperature tc [ c]
0 2 4 6 8 10 12 0 200 400 600 800 1000 1200 2sC4236 i b1 = 0.25i c i b2 = 0.9a v bb2 = 5v tc < 150 c reverse bias soa collector-emitter voltage v ce [v] collector current i c [a]

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