1 power transistors 2sC5622 silicon npn triple diffusion mesa type for horizontal deflection output features ? high breakdown voltage: 1 500 v ? high-speed switching ? wide area of safe operation (aso) absolute maximum ratings t c = 25 c unit: mm parameter symbol rating unit collector to base voltage v cbo 1 500 v collector to emitter voltage v ces 1 500 v emitter to base voltage v ebo 7v peak collector current i cp 12 a collector current i c 6 a base current i b 3 a collector power t c = 25 cp c 40 w dissipation t a = 25 c3 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c electrical characteristics t c = 25 c 3 c parameter symbol conditions min typ max unit collector cutoff current i cbo v cb = 1 000 v, i e = 050 a v cb = 1 500 v, i e = 01ma emitter to base voltage v ebo i e = 500 ma, i c = 07v forward current transfer ratio h fe v ce = 5 v, i c = 4 a 5 9 collector to emitter saturation voltage v ce(sat) i c = 4 a, i b = 0.8 a 5 v base to emitter saturation voltage v be(sat) i c = 4 a, i b = 0.8 a 1.5 v transition frequency f t v ce = 10 v, i c = 0.1 a, f = 0.5 mhz 3 mhz diode forward voltage v f i f = 4 a ? 2v storage time t stg i c = 4 a, resistance loaded 5.0 s fall time t f i b1 = 0.8 a, i b2 = ? 1.6 a 0.5 s 1: base 2: collector 3: emitter top-3e package internal connection marking symbol: C5622 15.5 ?.5 3.0 ?.3 (4.0) 2.0 ?.2 1.1 ?.1 5.45 ?.3 0.7 ?.1 5? 5? 5? 5? 5? 10.9 ?.5 1 5? 23 (10.0) (1.2) (2.0) solder dip 3.3 ?.3 5.5 ?.3 (2.0) 26.5 ?.5 (23.4) 22.0 ?.5 18.6 ?.5 (2.0) 3.2 ?.1 (4.5) b c e
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