ST2301A p channel enhancement mode mosfet -3.0a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com ST2301A 2005. v1 description ST2301A is the p-channel logic enhancement mode power field effect transistor which is produced using high cell density, dmos tren ch technology.this high density process is especially tailored to minimize on-state resist ance.these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. the product is in a very small outline su rface mount package. pin configuration sot-23 1.gate 2.source 3.drain part marking sot-23 y: year code a: process code ordering information part number package part marking st2301srg sot-23 s01ya process code a ~ z ; a ~ z st2301srg s : sot23 r : tape reel ; g : pb ? free feature z - 20v/-2.8a, r ds(on) = 80m (typ.) @v gs = -4.5v z -20v/-2.0a, r ds(on) = 120m @v gs = -2.5v z super high density cell design for extremely low r ds(on) z exceptional on-resistance and maximum dc current capability z sot-23 package design 3 1 2 d g s 3 1 2 s01ya
ST2301A p channel enhancement mode mosfet -3.0a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com ST2301A 2005. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain-source voltage v dss -20 v gate-source voltage v gss 12 v continuous drain current (tj=150 ) t a =25 t a =70 i d -3.0 -2.0 a pulsed drain current i dm -10 a continuous source current (diode conduction) i s -1.6 a power dissipation t a =25 t a =70 p d 1.25 0.8 w operation junction temperature t j 150 storage temperature range t stg -55/150 thermal resistance-j unction to ambient r ja 120 /w
ST2301A p channel enhancement mode mosfet -3.0a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com ST2301A 2005. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua -20 v gate threshold voltage v gs(th) v ds =vgs,i d =-250ua -0.45 -1.5 v gate leakage current i gss v ds =0v,v gs = 12v 100 na v ds =-20v,v gs =0v -1 zero gate voltage drain current i dss v ds =-20v,v gs =0v t j =55 -10 ua on-state drain current i d(on) v ds Q -5v,v gs =-4.5v v ds Q -5v,v gs =-2.5v -6 -3 a drain-source on-resistance r ds(on) v gs =-2.5v,i d =-2.0a v gs =-4.5v,i d =-2.8a 0.080 0.120 forward transconductance g fs v ds =-5v,i d =-2.8v 6.5 s diode forward voltage v sd i s =-1.6a,v gs =0v -0.8 -1.2 v dynamic total gate charge q g 5.8 10 gate-source charge q gs 0.85 gate-drain charge q gd v ds =-6v v gs =-4.5v i d ? -2.8a 1.7 nc input capacitance c iss 415 output capacitance c oss 223 reverse transfer capacitance c rss v ds =-6v v gs =0v f=1mh z 87 pf 13 25 turn-on time t d(on) tr 36 60 42 70 turn-off time t d(off) tf v dd =-6v r l =6 i d =-1a v gen =-4.5v r g =6 34 60 ns
ST2301A p channel enhancement mode mosfet -3.0a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com ST2301A 2005. v1 typical characterictics (25 unless noted)
ST2301A p channel enhancement mode mosfet -3.0a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com ST2301A 2005. v1 typical characterictics (25 unless noted)
ST2301A p channel enhancement mode mosfet -3.0a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com ST2301A 2005. v1 sot-23 package outline
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