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MRF5P21240HR6 1 rf device data freescale semiconductor rf power field effect transistor n - channel enhancement - mode lateral mosfet designed for w - cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for tdma, cdma and multicarrier amplifier applications. to be used in class ab for pcn - pcs/cellular radio and wll applications. ? typical 2 - carrier w - cdma performance: v dd = 28 volts, i dq = 2200 ma, p out = 52 watts avg., full frequency band, channel bandwidth = 3.84 mhz, par = 8.5 db @ 0.01% probability on ccdf. power gain ? 13 db drain efficiency ? 24% im3 @ 10 mhz offset ? - 36 dbc in 3.84 mhz channel bandwidth acpr @ 5 mhz offset ? - 39 dbc in 3.84 mhz channel bandwidth ? capable of handling 5:1 vswr, @ 28 vdc, 2140 mhz, 180 watts cw output power features ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? lower thermal resistance package ? low gold plating thickness on leads, 40 nominal. ? rohs compliant ? in tape and reel. r6 suffix = 150 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain- source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 603 3.4 w w/ c storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature t j 200 c cw operation @ t c = 25 c derate above 25 c cw 200 1.18 w w/ c table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 82 c, 180 w cw case temperature 77 c, 52 w cw r jc 0.29 0.32 c/w 1. mttf calculator available at http://www.freescale.com/rf . select tools/software/application software/calculators to access the mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: MRF5P21240HR6 rev. 1, 5/2006 freescale semiconductor technical data MRF5P21240HR6 2110 - 2170 mhz, 52 w avg., 28 v 2 x w - cdma lateral n - channel rf power mosfet case 375d - 05, style 1 ni - 1230 ? freescale semiconductor, inc., 2006. all rights reserved.
2 rf device data freescale semiconductor MRF5P21240HR6 table 3. esd protection characteristics test conditions class human body model (per jesd22 - a114) 2 (minimum) machine model (per eia/jesd22 - a115) m3 (minimum) charge device model (per jesd22 - c101) c6 (minimum) table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (1) (v ds = 10 vdc, i d = 300 adc) v gs(th) 2 2.8 4 vdc gate quiescent voltage (3) (v ds = 28 vdc, i d = 2200 madc) v gs(q) 3 3.8 5 vdc drain- source on - voltage (1) (v gs = 10 vdc, i d = 3 adc) v ds(on) ? 0.26 0.3 vdc forward transconductance (1) (v ds = 10 vdc, i d = 3 adc) g fs ? 7.5 ? s dynamic characteristics (1,2) reverse transfer capacitance (v ds = 28 vdc, v gs = 0, f = 1 mhz) c rss ? 2.75 ? pf functional tests (3) (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 2200 ma, p out = 52 w avg., f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz, 2 - carrier w - cdma, 3.84 mhz channel bandwidth carriers. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. im3 measured in 3.84 mhz bandwidth @ 10 mhz offset. par = 8.5 db @ 0.01% probability on ccdf. power gain g ps 12 13 ? db drain efficiency d 22.5 24 ? % intermodulation distortion im3 ? -36 -34 dbc adjacent channel power ratio acpr ? -39 -37 dbc input return loss irl ? -12 -9 db 1. each side of device measured separately. 2. part internally matched both on input and output. 3. measurement made with device in push - pull configuration.
MRF5P21240HR6 3 rf device data freescale semiconductor z11, z12 1.270 x 0.058 microstrip z13, z14 0.250 x 0.500 microstrip z15, z16 0.850 x 0.150 microstrip z17, z18 0.535 x 0.390 microstrip z19, z20 0.218 x 0.080 microstrip z24 0.825 x 0.080 microstrip pcb arlon gx - 0300- 55 - 22, 0.030 , r = 2.55 figure 1. MRF5P21240HR6 test circuit schematic z1 0.898 x 0.080 microstrip z2, z23 0.775 x 0.136 microstrip z3, z22 0.060 x 0.080 microstrip z4, z21 1.867 x 0.080 microstrip z5, z6 0.443 x 0.080 microstrip z7, z8 0.100 x 0.080 microstrip z9, z10 0.490 x 0.540 microstrip r1 + c17 c13 c5 z11 z1 z2 rf input c1 z3 z5 c2 z4 z6 z10 z12 z15 z16 c8 c12 c22 + c27 + c21 v suppl y c4 z13 z17 z21 c3 z14 z18 z22 z23 z24 rf output dut v bias z9 z7 + c9 + c15 b1 r4 r2 + c18 c14 c6 v bias c10 + c16 b2 r3 z8 z19 z20 c20 + + c19 c7 c11 c26 + c28 + c25 + c24 + + c23 v suppl y table 5. MRF5P21240HR6 test circuit component designations and values part description part number manufacturer b1, b2 short ferrite beads 2743019447 fair rite c1, c2, c3, c4 18 pf chip capacitors 100b180jca500x atc c5, c6, c7, c8 6.8 pf chip capacitors 100b6r8jca500x atc c9, c10, c11, c12 0.1 f chip capacitors cdr33bx104akws kemet c13, c14 1000 pf chip capacitors 100b102jca500x atc c15, c16 4.7 f tantalum capacitors t491c475m050 kemet c17, c18 10 f electrolytic capacitors eev - hb1h100p panasonic c19, c20, c21, c22 c23, c24, c25, c26 22 f tantalum capacitors t491x226k035as4394 kemet c27, c28 100 f electrolytic capacitors 517d107m050bb6a sprague r1, r2 1.0 k , 1/8 w chip resistors r3, r4 10 , 1/8 w chip resistors
4 rf device data freescale semiconductor MRF5P21240HR6 figure 2. MRF5P21240HR6 test circuit component layout mrf5p21240 rev. 5 cut out area c17 c15 c13 c9 c18 c16 c14 c10 r3 c6 b2 r2 r4 c5 b1 r1 c1 c2 c4 c3 c20 c19 c12 c8 c27 c28 c21 c22 c11 c7 c26 c25 c23 c24 freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
MRF5P21240HR6 5 rf device data freescale semiconductor typical characteristics 2200 5 15 2080 ?50 40 irl g ps acpr im3 f, frequency (mhz) figure 3. 2 - carrier w - cdma broadband performance @ p out = 52 watts avg. g ps , power gain (db) v dd = 28 vdc, p out = 52 w (avg.), i dq = 2200 ma 2?carrier w?cdma, 10 mhz carrier spacing 3.84 mhz channel bandwidth par = 8.5 db @ 0.01% probability (ccdf) ?30 ?5 ?10 ?15 ?20 input return loss (db) irl, im3 (dbc), acpr (dbc) ?25 2100 2120 2140 2160 2180 14 35 13 30 12 25 11 20 10 ?25 9 ?30 8 ?35 7 ?40 6 ?45 300 12 14 2 p out , output power (watts) pep figure 4. two - tone power gain versus output power g ps , power gain (db) 13.5 13 12.5 100 10 i dq = 2640 ma 2420 ma v dd = 28 vdc, f1 = 2135 mhz, f2 = 2145 mhz two?tone measurements, 10 mhz tone spacing 2200 ma 1980 ma 1760 ma 300 ?55 ?25 2 i dq = 2640 ma 2420 ma p out , output power (watts) pep figure 5. third order intermodulation distortion versus output power intermodulation distortion (dbc) imd,third order v dd = 28 vdc, f1 = 2135 mhz, f2 = 2145 mhz two?tone measurements, 10 mhz tone spacing ?30 ?35 ?40 ?45 ?50 10 100 2200 ma 1980 ma 1760 ma 30 ?55 ?25 0.1 7th order two?tone spacing (mhz) figure 6. intermodulation distortion products versus tone spacing intermodulation distortion (dbc) imd, 5th order 3rd order ?30 ?35 ?40 ?45 ?50 110 46 50 60 36 ideal p3db = 55.03 dbm (318.24 w) actual p in , input power (dbm) figure 7. pulse cw output power versus input power p out , output power (dbm) v dd = 28 vdc, i dq = 2200 ma pulsed cw, 8 sec(on), 1 msec(off) f = 2140 mhz 59 58 57 56 55 54 53 52 51 37 38 39 40 41 42 43 44 45 p1db = 54.36 dbm (272.9 w) d d , drain efficiency (%) v dd = 28 vdc, p out = 240 w (pep), i dq = 2200 ma two?tone measurements (f1 + f2)/2 = center frequency of 2140 mhz
6 rf device data freescale semiconductor MRF5P21240HR6 typical characteristics 100 0 30 1 ?55 ?25 g ps acpr im3 p out , output power (watts) avg. figure 8. 2 - carrier w - cdma acpr, im3, power gain and drain efficiency versus output power v dd = 28 vdc, i dq = 2200 ma f1 = 2135 mhz, f2 = 2145 mhz 2?carrier w?cdma, 10 mhz carrier spacing 3.84 mhz channel bandwidth par = 8.5 db @ 0.01% probability (ccdf) im3 (dbc), acpr (dbc) 25 ?30 20 ?35 15 ?40 10 ?45 5 ?50 10 d d , drain efficiency (%), g ps , power gain (db) t j , junction temperature ( c) figure 9. mttf factor versus junction temperature this above graph displays calculated mttf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mttf factor by i d 2 for mttf in a particular application. 220 100 120 140 160 180 200 10 6 10 9 10 8 10 7 mttf factor (hours x amps 2 ) 10 0.0001 100 0 peak?to?average (db) figure 10. ccdf w - cdma 3gpp, test model 1, 64 dpch, 67% clipping, single - carrier test signal probability (%) 10 1 0.1 0.01 0.001 24 68 figure 11. 2-carrier w-cdma spectrum f, frequency (mhz) ?110 ?120 ?70 ?20 ?80 ?60 ?50 (db) ?90 ?100 ?40 ?30 3.84 mhz channel bw ?im3 in 3.84 mhz bw +im3 in 3.84 mhz bw ?acpr in 3.84 mhz bw +acpr in 3.84 mhz bw 20 515 10 0 ?5 ?10 ?15 ?20 ?25 25 w - cdma test signal w?cdma. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. im3 measured in 3.84 mhz bandwidth @ 10 mhz offset. par = 8.5 db @ 0.01% probability on ccdf
MRF5P21240HR6 7 rf device data freescale semiconductor z o = 25 z load * f = 2190 mhz f = 2090 mhz z source figure 12. series equivalent source and load impedance f mhz z source z load 2090 2110 2130 11.42 - j2.25 11.28 - j2.14 10.45 - j2.16 5.33 - j6.21 5.44 - j5.88 5.40 - j6.16 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. v dd = 28 vdc, i dq = 2200 ma, p out = 52 w avg. z source z load input matching network device under test output matching network ? ?+ + 2150 2170 2190 11.38 - j2.14 10.73 - j0.40 11.04 - j1.25 5.12 - j6.06 4.96 - j5.25 4.98 - j4.47 f = 2190 mhz f = 2090 mhz
8 rf device data freescale semiconductor MRF5P21240HR6 notes
MRF5P21240HR6 9 rf device data freescale semiconductor notes
10 rf device data freescale semiconductor MRF5P21240HR6 notes
MRF5P21240HR6 11 rf device data freescale semiconductor package dimensions case 375d - 05 issue e ni - 1230 notes: 1. interpret dimensions and tolerances per asme y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. 4. recommended bolt center dimension of 1.52 (38.61) based on m3 screw. style 1: pin 1. drain 2. drain 3. gate 4. gate 5. source dim min max min max millimeters inches a 1.615 1.625 41.02 41.28 b 0.395 0.405 10.03 10.29 c 0.150 0.200 3.81 5.08 d 0.455 0.465 11.56 11.81 e 0.062 0.066 1.57 1.68 f 0.004 0.007 0.10 0.18 g 1.400 bsc 35.56 bsc h 0.082 0.090 2.08 2.29 k 0.117 0.137 2.97 3.48 l 0.540 bsc 13.72 bsc n 1.218 1.242 30.94 31.55 q 0.120 0.130 3.05 3.30 r 0.355 0.365 9.01 9.27 a g l d k 4x q 2x 12 4 3 m 1.219 1.241 30.96 31.52 s 0.365 0.375 9.27 9.53 aaa 0.013 ref 0.33 ref bbb 0.010 ref 0.25 ref ccc 0.020 ref 0.51 ref seating plane n c e m m a m aaa b m t b b (flange) h f m a m ccc b m t r (lid) s (insulator) m a m bbb b m t 4x a t m a m bbb b m t (insulator) m a m ccc b m t (lid) pin 5 m a m bbb b m t 4
12 rf device data freescale semiconductor MRF5P21240HR6 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 fax: 303 - 675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: MRF5P21240HR6 rev. 1, 5/2006

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