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HSB27G SMBJ100C 2608D 4040D L324F ESD3V L324F L324F
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  a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue north hollywood, ca 9160 5 (818) 982 - 1200 fax (818) 765 - 3004 1/1 specifications are subject to change without notice. characteristics t c = 25 o c symbol none test conditions minimum typical maximum units bv cbo i c = 1.0 ma 40 v bv ceo i c = 1.0 ma 28 v bv ebo i e = 1.0 ma 3.5 v i cbo v cb = 24 v 0.5 ma h fe v ce = 5.0 v i c = 100 ma 20 120 --- c ob v cb = 28 v f = 1.0 mhz 3.5 pf p g v ce = 20 v i cq = 100 ma f = 1.0 ghz p out = 0.5 w 9.0 db npn silicon rf power transistor mln1027sl description: the asi mln1027sl is designed for features: omnigold ? metalization system maximum ratings i c 0.250 a v cbo 40 v v ceo 28 v v ebo 3.5 v p diss 7.0 w @ t c = 25 o c t j - 65 o c to +200 o c t stg - 65 o c to +150 o c q q jc 25 o c/w package style .280 4l pill order code: asi10620 minimum inches / mm .004 / 0.10 .275 / 6.99 .050 / 1.27 b c d e f a maximum .285 / 7.24 .060 . 1.52 .130 / 3.30 .006 / 0.15 inches / mm 1.055 / 26.80 dim .220 / 5.59 .230 / 5.84 .118 / 3.00 d e f ?b ?c a s s d g


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