maximum ratings: (t a =25c) symbol units peak repetitive reverse voltage v rrm 40 v average forward current i o 200 ma peak repetitive forward voltage i frm 350 ma forward surge current, tp=10ms i fsm 750 ma power dissipation p d 250 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 500 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units bv r i r =100 a4050v v f i f =2.0ma 0.29 0.33 v v f i f =15ma 0.37 0.42 v v f i f =100ma 0.61 0.80 v v f i f =200ma 0.65 1.0 v i r v r =25v 90 500 na i r v r =25v, t a =100c 25 100 a c t v r =1.0v, f=1 mhz 7.0 pf t rr i f =i r =10ma, i rr =1.0ma, r l =100 ? 5.0 ns CMDSH-4E enhanced specification schottky diode sod-323 case central semiconductor corp. tm r0 (10-may 2004) description: the central semiconductor CMDSH-4E is an enhanced version of the cmdsh-3 silicon schottky diode in an sod-323 surface mount package. ? ? ? ? ? ?? ? enhanced specification. ?? additional enhanced specification. marking code: s1e enhanced specifications: ? i o from 100 ma max to 200 ma max. ? b v r from 30v min to 40 v min. ? v f from 1.0 v max to 0.8 v max.
central semiconductor corp. tm sod-323 case - mechanical outline CMDSH-4E enhanced specification schottky diode r0 (10-may 2004) marking code: s1e lead code: 1) cathode 2) anode
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