application high speed power switching features ?low on?esistance high speed switching low drive current 4 v gate drive device can be driven from 5 v source suitable for switching regulator, dc ?dc converter avalanche ratings 1 2 4 3 1 2, 4 3 dpak? 3 2 1 4 1. gate 2. drain 3. source 4. drain table 1 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss ?0 v gate to source voltage v gss ?0 v drain current i d ? a drain peak current i d(pulse) * ?0 a body?rain diode reverse drain current i dr ? a avalanche current i ap *** ? a avalanche energy e ar *** 2.1 mj channel dissipation pch** 20 w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? * pw 10 ?, duty cycle 1 % ** value at tc = 25 ? *** value at tch = 25 ?, rg 50 ? 2SJ279 l , 2SJ279 s silicon p channel mos fet
table 2 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown v (br)dss ?0 v i d = ?0 ma, v gs = 0 voltage gate to source breakdown v (br)gss ?0 v i g = ?00 ?, v ds = 0 voltage gate to source leak current i gss ?0 ? v gs = ?6 v, v ds = 0 zero gate voltage drain current i dss ?00 ? v ds = ?0 v, v gs = 0 gate to source cutoff voltage v gs(off) ?.0 ?.25 v i d = ? ma, v ds = ?0 v static drain to source on state r ds(on) 0.18 0.20 ? i d = ? a resistance v gs = ?0 v * 0.23 0.27 ? i d = ? a v gs = ? v * forward transfer admittance |y fs | 3.0 5 s i d = ? a v ds = ?0 v * input capacitance ciss 690 pf v ds = ?0 v output capacitance coss 340 pf v gs = 0 reverse transfer capacitance crss 110 pf f = 1 mhz turn?n delay time t d(on) 15 ns i d = ? a rise time t r 35 ns v gs = ?0 v turn?ff delay time t d(off) 125 ns r l = 10 ? fall time t f ?5 ns body?rain diode forward v df ?.2 v i f = ? a, v gs = 0 voltage body?rain diode reverse t rr 140 s i f = ? a, v gs = 0, recovery time dif / dt = 50 a / ? * pulse test 2SJ279 l , 2SJ279 s
40 30 20 10 0 channel dissipation pch (w) 50 100 150 200 case temperature tc (?) power vs. temperature derating ?0 ?0 ?0 ? ? ? ?.5 ?.3 ? ? ? ?0 ?0 ?0 ?00 10? 100? 1ms pw = 10ms (1 shot) dc operation (tc = 25?) ta = 25? drain to source voltage v (v) ds drain current i (a) d in this area is operation ds (on) limited by r maximum safe operation area ?0 ? ? ? ? 0 ? ? ? ? ?0 ?0v ?v v = ?.5 v gs ?v ?.5v ?v pulse test drain to source voltage v (v) ds drain current i (a) d typical output characteristics ? ? ? ? ? 0 ? ? ? ? ? gate to source voltage v (v) gs drain current i (a) d pulse test v = ?0 v ds tc = 75? 25? ?5? typical transfer characteristics 2SJ279 l , 2SJ279 s
?.0 ?.6 ?.2 ?.8 ?.4 0 gate to source voltage v (v) gs ? ? ? ? ?0 pulse test ? a ? a drain to source saturation voltage v (v) ds(on) d i = ? a drain to source saturation voltage vs. gate to drain voltage 1 0.5 0.2 0.1 ?.1 ?.2 ?.5 ? ? ? ?0 pulse test v = ? v gs ?0 v drain current i (a) d static drain to source on state resistance r ds(on) (?) static drain to source on state resistance vs. drain current 0.5 0.4 0.3 0.2 0.1 0 case temperature tc (?) ?0 0 40 80 120 160 i = ? a d ?, ? a ? a ?, ? a v = ?0 v gs pulse test ? v static drain to source on state resistance r ( ) ds(on) static drain to source on state resistance vs. temperature ? 20 10 5 2 1 0.5 ?.1 ?.2 ?.5 ? ? ? ?0 pulse test v = ?0 v ds 25? tc = ?5? 75? drain current i (a) d forward transfer admittance |yfs| (s) forward transfer admittance vs. drain current 2SJ279 l , 2SJ279 s
? ? ? ? ? 0 source to drain voltage v (v) sd ?.4 ?.8 ?.2 ?.6 ? v = ?0 v gs ? v 0, 5 v reverse drain current i (a) dr pulse test reverse drain current vs. source to drain voltage 500 200 100 50 20 10 5 ?.1 ?.2 ?.5 ? ? ? ?0 td (off) td (on) tf tr drain current i (a) d switching time t (ns) gs dd v = ?0 v , v ?0 v pw = 2? , duty 1 % switching characteristics = : < = 500 200 100 50 20 10 5 ?.1 ?.2 ?.5 ? ? ? ?0 reverse drain current i (a) dr reverse recovery time t (ns) di/dt = 50 a/? , v = 0 ta = 25? gs body to drain diode reverse recovery time rr 10000 3000 1000 300 100 30 10 0 ?0 ?0 ?0 ?0 ?0 ciss coss crss v = 0 f = 1 mhz gs drain to source voltage v (v) ds capacitance c (pf) typical capacitance vs. drain to source voltage 2SJ279 l , 2SJ279 s
0 ?0 ?0 ?0 ?0 ?00 0 0 ? ? ?2 ?6 ?0 8 16 243240 i = ? a d v = ?0 v ?5 v ?0 v dd v = ?0 v ?5 v ?0 v dd v gs gate charge qg (nc) drain to source voltage v (v) ds gate to source voltage v (v) gs dynamic input characteristics v ds 2.5 2.0 1.5 1.0 0.5 0 channel temperature tch (?) 25 50 75 100 125 150 repetive avalanche energy e (mj) ar i = ? a v = ?5 v duty < 0.1 % rg 50 ap dd ? maximum avalanche energy vs. channel temperature derationg > = d. u. t rg i monitor ap v monitor ds v dd 50 ? vin ?5 v 0 i d v ds i ap v (br)dss l v dd e = ?l ?i 2 1 v v ?v ar ap dss dss dd 2 avalanche test circuit and waveform 2SJ279 l , 2SJ279 s
3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m pulse width pw (s) normalized transient thermal impedance 100 m 1 10 s (t) dm p pw t d = pw t ch ?c(t) = s (t) ? ch ?c ch ?c = 6.25 ?/w, tc = 25 ? d = 1 0.5 0.2 0.01 0.02 0.1 0.05 1 shot pulse tc = 25? normalized transient thermal impendance vs. pulse width vin monitor d.u.t. vin ?0 v r l v = ?0 v dd vout monitor 50 ? t t (on) vin 90% 90% 10% 10% vout t (off) 90% t f 10% switching time test circuit and waveform d r d 2SJ279 l , 2SJ279 s
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