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| 1 item symbol rating unit drain-source voltage v ds -60 continuous drain current i d 25 pulsed drain current i d(puls] 100 gate-source voltage v gs 20 maximum avalanche energy *1 e av 519.8 maximum power dissipation(tc=25 c) p d 40 operating and storage t ch +150 temperature range t stg 2SJ477-01MR fuji power mosfet p-channel silicon power mosfet equivalent circuit schematic maximum ratings and characteristics absolute maximum ratings (tc=25c unless otherwise specified) v a a v mj w c c -55 to +150 fap-iii series electrical characteristics (t c =25c unless otherwise specified) thermal characteristics item symbol zero gate voltage drain current i dss min. typ. max. units v v a ma na m m s pf ns a v ns c min. typ. max. units thermal resistance r th(ch-c) r th(ch-a) 3.125 62.5 c/w c/w symbol bv dss v gs(th) i gss r ds(on) g fs c iss c oss c rss t d(on) t r t d(off) t f i av v sd t rr q rr test conditions i d =1ma v gs =0v i d =1ma v ds =v gs v ds = -60v t ch =25c v gs =0v t ch =125c v gs = 20v v ds =0v i d = -12.5a v gs = -4v v gs = -10v i d =12.5a v ds = -25v v ds = -25v v gs =0v f=1mhz v cc = -30v r g =10 i d = -25a v gs = -10v l=100 h t ch =25c i f =2xi dr v gs =0v t ch =25c i f =i dr v gs =0v -di/dt=100a/ s t ch =25c -60 -1.0 -1.5 -2.5 -10 -500 -0.2 -1.0 10 100 80 110 45 60 7.5 15.0 2000 3000 700 1050 450 680 15 25 80 120 190 290 90 140 -25 -2 -3 160 0.9 gate(g) source(s) drain(d) outline drawings features high speed switching low on-resistance no secondary breakdown low driving power high forward transconductance avalanche-proof applications switching regulators dc-dc converters general purpose power amplifier *1 l=1.11mh, vcc= -24v www.fujielectric.co.jp/fdt/scd/ to-220f
2 characteristics 2SJ477-01MR fuji power mosfet 3 fuji power mosfet 2SJ477-01MR 4 fuji power mosfet 2SJ477-01MR |
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