beam lead schottky diode pairs for mixers and detectors technical data features ? monolithic pair closely matched electrical parameters ? low capacitance 0.1 pf maximum at 0 volts ? low noise figure typical 7.5 db at 26 ghz ? rugged construction 4 grams minimum lead pull ? platinum tri-metal system high temperature stability ? polyimide scratch protection ? silicon nitride passivation stable, reliable performance description these dual beam lead diodes are constructed using a metal- semiconductor schottky barrier junction. advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semicon- ductor. a nitride passivation layer provides immunity from contaminants which could otherwise lead to i r drift. the agilent beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance. hsch-5500 series outline 04b maximum ratings (for each diode) pulse power incident at t a = 25 c .......................................................... 1 w pulse width = 1 m s, du = 0.001 cw power dissipation at t a = 25 c ................................................ 150 mw measured in an infinite heat sink derated linearly to zero at maximum rated temperature t opr C operating temperature range ...............................-65 c to +175 c t stg C storage temperature range ....................................-65 c to +200 c minimum lead strength ........................................ 4 grams pull on any lead diode mounting temperature ................................. 350 c for 10 sec. max. these diodes are esd sensitive. handle with care to avoid static discharge through the diode. 250 (10.0) 200 (8.0) 60 (2.4) 40 (1.5) 120 (5.0) 90 (3.5) 190 (7.0) 160 (6.0) 540 (21.0) 480 (19.0) 220 (9.0) 180 (6.0) 220 (9.0) 180 (7.0) dimensions in m (1/1000 inch) common anode cathode platinum metallization glass glass gold beams cathode 12 (0.5) 8 (0.3)
2 these dual beam leads are intended for use in balanced mixers and in even harmonic anti- parallel pair mixers. by using several of these devices in the proper configuration it is easy to assemble bridge quads, star quads, and ring quads for class i, ii, or iii type double balanced mixers. applications the beam lead diode is ideally suited for use in stripline or microstrip or coplanar waveguide circuits. its small physical size and uniform dimensions give it low parasitics and repeatable rf characteristics through k-band. assembly techniques thermocompression bonding is recommended. welding or conductive epoxy may also be used. for additional information see application note 979, the handling and bonding of beam lead devices made easy, or application note 993, beam lead device bonding to soft substrates. electrical specifications for dc tested diodes at t a = 25 c minimum maximum maximum maximum part breakdown dynamic max. total max. forward max. max. number voltage resistance d r d capacitance d c t voltage d v f i r hsch- [1] barrier v br (v) r d ( w )( w )c t (pf) (pf) v f (mv) (mv) (na) 5511 medium 4 20 3 0.10 0.02 500 10 100 5512 16 2 0.15 0.03 5531 low 20 3 0.10 0.02 375 400 test i r = 10 m ai f = 5 ma v r = 0 v i f = 1 ma v r = 1 v conditions f = 1 mhz note: 1. standard hi-rel program available on hsch-5511 and hsch-5531. others are available upon request. typical detector characteristics at t a = 25 c medium barrier and low barrier (dc bias) parameter symbol typical value units test conditions tangential sensitivity tss -55 dbm 20 m a bias, zero bias, p in = -40 dbm, voltage sensitivity g 9.0 mv/ m wr l = 100 k w video bandwidth = 2 mhz video resistance r v 1350 w f = 10 ghz low barrier (zero bias) parameter symbol typical value units test conditions tangential sensitivity tss -46 dbm zero bias, zero bias, p in = -30 dbm, voltage sensitivity g 17 mv/ m wr l = 10 m w video bandwidth = 2 mhz video resistance r v 1.4 m w f = 10 ghz
3 spice parameters parameter units HSCH-5512 hsch-5511 hsch-5531 b v v5 5 5 c j0 pf 0.13 0.09 0.09 e g ev 0.69 0.69 0.69 i bv a 10e - 5 10e - 5 10e - 5 i s a 3 x 10e - 10 3 x 10e - 10 4 x 10e - 8 n 1.08 1.08 1.08 r s w 913 13 p b v 0.65 0.65 0.5 p t 22 2 m 0.5 0.5 0.5 typical parameters 100 10 1 0.1 0.01 forward voltage (v) figure 1. typical forward characteristics for medium barrier beam lead diodes. hsch-551x series. forward current (ma) 0 0.2 0.4 0.6 1.0 0.8 +125 c +25 c -55 c figure 3. typical noise figure vs. frequency. noise figure (db) 0 5.0 frequency (ghz) 16 20 7.5 6.0 5.5 4 2 9.375 26 6.5 7.0 28 812 24 0.15 pf 0.1 pf 0.25 pf 100 10 1 0.1 0.01 forward voltage (v) figure 2. typical forward characteristics for low barrier beam lead diodes. hsch-553x series, forward current (ma) 0 0.2 0.4 0.6 0.8 +125 c +25 c -55 c 0.2 0.5 1.0 1.0 2.0 3.0 5.0 2.0 3.0 5.0 0.2 0.5 0.2 0.5 1.0 2.0 3.0 5.0 10.0 10.0 10.0 10 2 18 26 ghz 0.2 0.5 1.0 1.0 2.0 3.0 5.0 2.0 3.0 5.0 0.2 0.5 0.5 1.0 2.0 3.0 5.0 10.0 10.0 10.0 10 2 26 ghz 150 a 50 a 20 a 0.2 20 figure 4. typical admittance characteristics with 1 ma self bias. hsch-5511 and -5331. figure 5. typical admittance characteristics with external bias. hsch-5511 and -5531.
4 typical parameters, continued 0.2 0.5 1.0 1.0 2.0 3.0 5.0 2.0 3.0 5.0 0.2 0.5 0.5 1.0 2.0 3.0 5.0 10.0 10.0 10.0 2 18 ghz 3 ma 0.2 10 1 ma 1.5 ma 0.2 0.5 1.0 1.0 2.0 3.0 5.0 2.0 3.0 5.0 0.2 0.5 0.5 1.0 2.0 3.0 5.0 10.0 10.0 10.0 2 18 ghz 150 a 0.2 10 20 a 50 a figure 6. typical admittance characteristics with self bias. HSCH-5512. figure 7. typical admittance characteristics with external bias. HSCH-5512. 0.2 0.5 1.0 1.0 2.0 3.0 5.0 2.0 3.0 5.0 0.2 0.5 0.5 1.0 2.0 3.0 5.0 10.0 10.0 10.0 2 1.5 ma 0.2 12 ghz 1 ma 3 ma 0.2 0.5 1.0 1.0 2.0 3.0 5.0 2.0 3.0 5.0 0.2 0.5 0.5 1.0 2.0 3.0 5.0 10.0 10.0 10.0 2 6 150 a 0.2 12 ghz 20 a 50 a figure 9. typical admittance characteristics with external bias. hsch-5536. figure 8. typical admittance characteristics with self bias. hsch-5536.
5 models for each beam lead schottky diode hsch-5511, -5531 1 ma self bias 0.11 pf 0.03 pf 0.04 nh 0.1 nh 11 267 HSCH-5512 self bias 0.02 pf 0.1 nh c j r s r j 1.0 ma self bias 1.5 ma self bias 3.0 ma self bias part number r 1 ( w )r 2 ( w )c (pf) r 1 ( w )r 2 ( w ) c (pf) r 1 ( w )r 2 ( w ) c (pf) HSCH-5512 5.0 393 0.11 5.2 232 0.11 5.0 150 0.12
hsch-5511, -5531 external bias HSCH-5512 external bias 0.03 pf 11 0.1 nh 0.04 nh c j r j 0.02 pf 0.1 nh c j r j r s 20 m a dc bias 50 m a dc bias 150 m a dc bias part numbers r j ( w )c j (pf) r j ( w )c j (pf) r j ( w )c j (pf) hsch-5511, -5531 1400 0.09 560 0.09 187 0.10 20 m a dc bias 50 m a dc bias 150 m a dc bias part numbers r s ( w )r j ( w )c j (pf) r s ( w )r j ( w )c j (pf) r s ( w )r j ( w )c j (pf) HSCH-5512 2.8 1240 0.11 4.7 550 0.12 2.7 180 0.13 models for each beam lead schottky diode, continued www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies obsoletes 5954-2224 5965-8850e (11/99)
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