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| savantic semiconductor product specification silicon npn power transistors 2SC4927 d escription with to-3pfm package built-in damper diode high breakdown voltage applications tv/character display horizontal deflection output applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v ceo collector-emitter voltage open base 1500 v v ebo emitter-base voltage open collector 6 v i c collector current 8 a i c(peak) collector current-peak 9 a i c(surge) collector current-surge 18 a io c to e diode forward current 8 a p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pfm) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC4927 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =500ma ;i c =0 6 v i ces collector cut-off current v ce =1500v; r be =0 0.5 ma h fe dc current gain i c =1a ; v ce =5v 25 v ce(sat) collector-emitter saturation voltage i c =6a ; i b =1.2a 5 v v be(sat) base-emitter saturation voltage i c =6a ; i b =1.2a 1.5 v v ecf diode forward voltage i f =8a 2.0 v t f fall time i cp =6a; f h =31.5khz i b1 =1.2a;i b2 =-2.4a 0.5 s savantic semiconductor product specification 3 silicon npn power transistors 2SC4927 package outline fig.2 outline dimensions savantic semiconductor product specification 4 silicon npn power transistors 2SC4927 |
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