up to 6 ghz medium power silicon bipolar transistor technical data features ? high output power: 12.0 dbm typical p 1 db at 2.0 ghz 20.5 dbm typical p 1 db at 4.0 ghz ? high gain at 1 db compression: 14.0 db typical g 1 db at 2.0 ghz 9.5 db typical g 1 db at 4.0 ghz ? low noise figure: 1.9 db typical nf o at 2.0 ghz ? high gain-bandwidth product: 8.0 ghz typical f t ? hermetic gold-ceramic microstrip package AT-42010 100 mil package description agilents AT-42010 is a general purpose npn bipolar transistor that offers excellent high fre- quency performance. the at- 42010 is housed in a hermetic, high reliability 100 mil ceramic package. the 4 micron emitter-to- emitter pitch enables this transis- tor to be used in many different functions. the 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. this device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the vhf, uhf, and microwave frequencies. an optimum noise match near 50 w up to 1 ghz , makes this device easy to use as a low noise amplifier. the AT-42010 bipolar transistor is fabricated using agilents 10 ghz f t self-aligned-transistor (sat) process. the die is nitride passi- vated for surface protection. excellent device uniformity, performance and reliability are produced by the use of ion- implantation, self-alignment techniques, and gold metalization in the fabrication of this device.
2 AT-42010 absolute maximum ratings [1] absolute symbol parameter units maximum v ebo emitter-base voltage v 1.5 v cbo collector-base voltage v 20 v ceo collector-emitter voltage v 12 i c collector current ma 80 p t power dissipation [2,3] mw 600 t j junction temperature c 200 t stg storage temperature c -65 to 200 thermal resistance [2,4] : q jc = 150 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 6.7 mw/ c for t c > 110 c. 4. the small spot size of this tech- nique results in a higher, though more accurate determination of q jc than do alternate methods. see measurements section thermal resistance for more information. electrical specifications, t a = 25 c symbol parameters and test conditions [1] units min. typ. max. |s 21e | 2 insertion power gain; v ce = 8 v, i c = 35 ma f = 2.0 ghz db 10.5 11.5 f = 4.0 ghz 5.5 p 1 db power output @ 1 db gain compression f = 2.0 ghz dbm 21.0 v ce = 8 v, i c = 35 ma f= 4.0 ghz 20.5 g 1 db 1 db compressed gain; v ce = 8 v, i c = 35 ma f = 2.0 ghz db 14.0 f = 4.0 ghz 9.5 nf o optimum noise figure: v ce = 8 v, i c = 10 ma f = 2.0 ghz db 1.9 f = 4.0 ghz 3.0 g a gain @ nf o ; v ce = 8 v, i c = 10 ma f = 2.0 ghz db 13.5 f = 4.0 ghz 10.0 f t gain bandwidth product: v ce = 8 v, i c = 35 ma ghz 8.0 h fe forward current transfer ratio; v ce = 8 v, i c = 35 ma 30 150 270 i cbo collector cutoff current; v cb = 8 v m a 0.2 i ebo emitter cutoff current; v eb = 1 v m a 2.0 c cb collector base capacitance [1] : v cb = 8 v, f = 1 mhz pf 0.28 notes: 1. for this test, the emitter is grounded.
3 AT-42010 typical performance, t a = 25 c frequency (ghz) figure 4. insertion power gain, maximum available gain and maximum stable gain vs. frequency. v ce = 8 v, i c = 35 ma. gain (db) 0.1 0.5 0.3 1.0 3.0 6.0 i c (ma) figure 2. output power and 1 db compressed gain vs. collector current and frequency. v ce = 8 v. 24 20 16 12 8 4 g 1 db (db) p 1 db (dbm) 0 1020 304050 p 1db g 1db 2.0 ghz 2.0 ghz 4.0 ghz 4.0 ghz 40 35 30 25 20 15 10 5 0 msg mag |s 21e | 2 i c (ma) figure 1. insertion power gain vs. collector current and frequency. v ce = 8 v. 20 16 12 8 4 0 |s 21e | 2 gain (db) 0 1020 304050 1.0 ghz 2.0 ghz 4.0 ghz i c (ma) figure 3. output power and 1 db compressed gain vs. collector current and voltage. f = 2.0 ghz. 10 v 4 v 6 v 4 v 10 v 6 v 24 20 16 12 16 14 12 10 g 1 db (db) p 1 db (dbm) 0 1020 304050 p 1db g 1db frequency (ghz) figure 5. noise figure and associated gain vs. frequency. v ce = 8 v, i c = 10 ma. gain (db) 24 21 18 15 12 9 6 3 0 4 3 2 1 0 nf o (db) 0.5 2.0 1.0 3.0 4.0 5.0 g a nf o
4 AT-42010 typical scattering parameters, common emitter, z o = 50 w , t a =25 c, v ce =8 v, i c = 10 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .74 -47 28.5 26.65 153 -36.4 .015 72 .91 -18 0.5 .65 -136 21.4 11.71 103 -29.4 .034 38 .51 -39 1.0 .63 -168 15.9 6.24 82 -27.2 .044 36 .40 -42 1.5 .63 174 12.6 4.26 69 -26.0 .050 42 .38 -45 2.0 .63 161 10.1 3.23 57 -24.6 .059 43 .38 -49 2.5 .64 154 8.4 2.64 51 -23.0 .070 52 .38 -51 3.0 .65 145 6.9 2.22 41 -22.0 .080 54 .37 -56 3.5 .66 136 5.8 1.94 31 -21.0 .090 51 .38 -65 4.0 .66 126 4.7 1.72 21 -19.7 .104 50 .39 -74 4.5 .66 115 3.8 1.55 11 -18.0 .126 45 .40 -82 5.0 .66 103 3.0 1.41 1 -17.3 .136 41 .40 -89 5.5 .68 90 2.1 1.28 -9 -16.1 .156 36 .40 -98 6.0 .72 81 1.3 1.16 -19 -15.4 .170 31 .37 -110 AT-42010 typical scattering parameters, common emitter, z o = 50 w , t a =25 c, v ce =8 v, i c = 35 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .54 -90 33.3 45.97 138 -39.2 .011 54 .76 -29 0.5 .62 -163 22.8 13.83 94 -33.2 .022 52 .34 -40 1.0 .62 177 17.0 7.10 78 -28.8 .036 59 .30 -40 1.5 .62 166 13.6 4.82 67 -26.2 .049 61 .29 -42 2.0 .62 155 11.3 3.65 56 -23.8 .065 57 .29 -47 2.5 .63 150 9.5 2.99 51 -21.8 .081 62 .29 -50 3.0 .64 142 8.0 2.52 42 -21.0 .090 63 .30 -57 3.5 .65 133 6.8 2.19 32 -19.7 .103 59 .30 -67 4.0 .65 124 5.7 1.93 22 -18.4 .120 54 .31 -76 4.5 .65 113 4.7 1.72 13 -17.2 .138 49 .33 -85 5.0 .66 102 3.9 1.56 3 -16.6 .148 45 .34 -92 5.5 .69 91 3.0 1.41 -6 -15.6 .166 39 .33 -100 6.0 .73 83 2.1 1.27 -16 -14.9 .180 32 .30 -110 a model for this device is available in the device models section. AT-42010 noise parameters: v ce = 8 v, i c = 10 ma freq. nf o g opt ghz db mag ang r n /50 0.1 1.0 .04 15 0.13 0.5 1.1 .05 76 0.12 1.0 1.5 .10 132 0.12 2.0 1.9 .23 -177 0.11 4.0 3.0 .45 -125 0.26
5 100 mil package dimensions 1 3 4 2 emitter emitter collector base .020 .508 .100 2.54 .495 .030 12.57 .76 notes: (unless otherwise specified) 1. dimensions are in 2. tolerances in .xxx = 0.005 mm .xx = 0.13 mm .040 1.02 .030 .76 .004 .002 .10 .05
www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5965-8910e (11/99)
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