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| smd type ic www.kexin.com.cn 1 smd type transistors 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source 1gate 2drain 3 source absolute maximum ratings ta = 25 parameter symbol rating unit drain-source voltage v ds 30 v drain-gate voltage r gs =20k v dgr 30 v gate-source voltage v gs v drain current (dc) t mb =25 i d 75 a drain current (dc) t mb = 100 i d 75 a drain current (pulse peak value) t mb =25 i dm 400 a total power dissipation t mb =25 p tot 230 w storage & operating temperature t stg ,t j -55to175 154 a 75 a pulsed reverse drain current i drm 616 a non-repetitive avalanche energy w dss 1.1 j thermal resistance junction to mounting base r th j-mb 0.65 k/w thermal resistance junction to ambient r th j-a 50 k/w i dr reverse drain current (dc) t mb =25 features trenchmos tm technology q101 compliant 175 rated standard level compatible. trenchmos tm standard level fet KUK7606-55A
www.kexin.com.cn 2 smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit i d =0.25ma;v gs =0v;t j =25 30 v i d =0.25ma;v gs =0v;t j =-55 27 v i d =1ma;v ds =v gs ;t j =25 234v i d =1ma;v ds =v gs ;t j =175 1v i d =1ma;v ds =v gs ;t j =-55 4.4 v v ds =30v;v gs =0v;t j =25 0.05 10 a v ds =30v;v gs =0v;t j =175 500 a gate-source leakage current i gss v gs = 20 v; v ds =0v 2 100 na v gs =10v;i d =25a;t j =25 4.3 5 m v gs =10v;i d =25a;t j =175 9.3 m input capacitance c iss 4500 6000 pf output capacitance c oss 1500 1800 pf reverse transfer capacitance c rss 960 1300 pf turn-on delay time t d(on) 35 55 ns rise time t r 130 200 ns turn-off delay time t d(off) 155 230 ns fall time t f 150 220 ns internal drain inductance l d from drain lead 6 mm from package to centre of die 2.5 nh internal source inductance l s measured from source lead soldering point to source bond pad 7.5 nh continuous reverse drain current i dr 75 a pulsed reverse drain current i drm 240 a i f =25a;v gs = 0 v 0.85 1.2 v i = 75 a; v = 0 v 1.1 v reverse recovery time t rr i s =75a;-d if /d t = 100 a/s; 400 ns recovered charge q r v gs =-10v;v ds =30v 1.0 c drain-source non-repetitive unclamped inductive turn-off energy w dss i d =75a;v dd 25v;v gs =10v;r gs =50;t mb =25 500 mj drain-source breakdown voltage v (br)dss v gs(th) gate-source threshold voltage r dson drain-source on-state resistance zero gate voltage drain current i dss source-drain (diode forward) voltage v sd v gs =0v;v ds =25v;f=1mhz v dd =30v;r l =1.2;v gs =10v;r g =10 KUK7606-55A |
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