specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 1 of 5 july 2008 AP501 pcs-band 4w hbt amplifier module product information product features ? 1930 ? 1990 mhz ? 32.5 db gain ? +36 dbm p1db ? -62 dbc acpr @ 27 dbm is-95a linear power ? -55 dbc aclr @ 26.5 dbm wcdma linear power ? +12 v single supply ? power down mode ? bias current adjustable ? rohs-compliant flange-mount pkg applications ? final stage amplifiers for repeaters ? optimized for driver amplifier pa mobile infrastructure product description the AP501 is a high dynamic range power amplifier in a rohs-compliant flange-mount package. the multi-stage amplifier module has 32.5 db gain, while being able to achieve high performance for pcs-band applications with +36 dbm of compressed 1db power. the module has been internally optimized for driver applications provide -62 dbc acpr at 27 dbm for is-95a applications or -55 dbc aclr at 26.5 for wcdma applications. the module can be biased down for current when higher efficiency is required. the AP501 uses a high reliab ility ingap/gaas hbt process technology and does not require any external matching components. the module operates off a +12v supply and does not requiring any negative biasing voltages; an internal active bias allows the amplifie r to maintain high linearity over temperature. it has the added feature of a +5v power down control pin. a low-cost metal housing allows the device to have a low thermal resistance to ensure long lifetimes. all devices are 100% rf and dc tested. the AP501 is targeted for use as a driver or final stage amplifier in wireless infrastructure where high linearity and high power is required. this combination makes the device an excellent candidate for next generation multi-carrier 3g base stations. functional diagram top view pin no. function 1 rf output 2 / 4 vcc 3 / 5 vpd 6 rf input case ground specifications 25 oc, v cc =12v, v pd =5v, i cq =820ma, r7=0 ? , 50 ? unmatched fixture parameter units min typ max operational bandwidth mhz 1930 ? 1990 test frequency mhz 1960 power gain db 30 32.4 30.5 is-95a acpr @ 27dbm (1) dbc -61.8 -55 wcdma aclr @ 26.5dbm (2) dbc -55 input return loss db 22 output return loss db 6 output p1db dbm +36 output ip3 dbm +52 operating current @ 27 dbm ma 790 840 940 quiescent current, icq ma 780 820 920 device voltage, vcc v +12 device voltage, vpd (3) v +5 load stability vswr 10:1 1. is-95a signal modulation, 9 channels forward, 1.23 mhz bw, 885 khz offset. 2. 3gpp wcdma signal modulation, test mode l 1+32 dpch, 3.84 mhz bw, 5 mhz offset. 3. pull-down voltage: 0v = ?off?, 5v=?on? absolute maximum rating parameter rating operating case temperature -40 to +85 c storage temperature -55 to +150 c rf input power (continuous) with output terminated in 50 ? +15 dbm operation of this device above any of th ese parameters may cause permanent damage. typical performance (4) parameter units config1 config2 operating current @ 27 dbm ma 840 420 quiescent current, icq ma 820 250 device voltage, vcc v +12 +12 r7 value ? 0 730 test frequency mhz 1960 1960 power gain db 32.4 30.5 is-95a acpr @ 27dbm (1) dbc -61.8 -53 wcdma aclr @ 26.5dbm (2) dbc -55 -49 input return loss db 22 20 output return loss db 6 8 output p1db dbm +36 +36 output ip3 dbm +52 +52 4. configuration 1 has the module biased in cla ss ab and is detailed on page 2 of the datasheet. performance is shown at 25 oc, vcc=12v, vpd=5v, icq=820ma, r7=0 ? , 50 ? unmatched fixture. configuration 2 has the module biased in near class b and is detailed on page 3 of the datasheet. performance is shown at 25 oc, vcc=12v, vpd=5v, icq=250ma, r7=730 ? , 50 ? tuned fixture. ordering information part no. description AP501 pcs-band 4w hbt amplifier module AP501-pcb fully-assembled evaluation board (class ab configuration, icq=820ma) 1 2 3 4 5 6
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 2 of 5 july 2008 AP501 pcs-band 4w hbt amplifier module product information performance graphs ? class ab configuration (AP501-pcb) the AP501-pcb and AP501 module is configured for class ab by default. the resistor ? r7 ? which sets the current draw for the amplifier is set at 0 ? in this configuration. increasing that value will decrease the quiescent and operating current of the amplifier module, as described on the next page. notes: 1. please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. the use of a convection fan is also recommended in laboratory environments. details of the mounting holes used in the wj heatsink are given on the last page of this datasheet. 2. the area around the module underneath the pcb should not contain any soldermask in order to maintain good rf grounding. 3. for proper and safe operation in the laboratory, the power-on sequencing should be followed: a. connect rf in and out b. connect the voltages and ground pins as shown in the circuit. c. apply the rf signal d. power down with the reverse sequence narrowband s-parameters +25 c, icq=850ma 27 28 29 30 31 32 33 1930 1950 1970 1990 frequency (mhz) s21 (db) -30 -25 -20 -15 -10 -5 0 s11, s22 (db) s21 s11 s22 pae / icc vs. output power 1960 mhz, +25 c, icq=850ma 750 800 850 900 950 1000 24 26 28 30 32 34 output power (dbm) icc (ma) 0 5 10 15 20 25 pae (%) icc pae gain / output power vs. input power 1960 mhz, +25 c, icq=850ma 26 28 30 32 34 36 -6-4-20246 input power (dbm) pout (dbm) 30 30.5 31 31.5 32 32.5 gain (db) pout gain wideband s-parameters +25 c, icq=850ma -40 -20 0 20 40 0 500 1000 1500 2000 2500 3000 frequency (mhz) magnitude (db) s21 s11 s22 acpr vs. channel power is-95a, 9 channels forward, 1fa, 1960 mhz, icq=850ma -90 -80 -70 -60 -50 22 23 24 25 26 27 28 output channel power (dbm) acpr (dbc) 885 khz 1.25 mhz aclr vs. channel power +25c, 3gpp wcdma, 1fa, 1+32 dpch, 5 mhz offset, 1960 mhz, icq=850ma -70 -60 -50 -40 18 20 22 24 26 28 output channel power (dbm) aclr (dbc) -40 c +25 c +85 c dnp dnp dnp dnp dnp dnp dnp dnp dnp 0 ? 0 ? 0 ? 0 ? 10 f .01
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 3 of 5 july 2008 AP501 pcs-band 4w hbt amplifier module product information performance graphs ? class b configuration the AP501 can be adjusted to operate at lower current biasing levels by modifying the r7 resistor for improved efficiency performance. the configuration shown on this page has the AP501 operating with icq = 250 ma (icc = 400 ma @ 27 dbm). output l-c matching components have been added externally on the circuit to optimize the amplifier for acpr performance at this biasing configuration. notes: 1. please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. the use of a convection fan is also recommended in laboratory environments. details of the mounting holes used in the wj heatsink are given on the last page of this datasheet. 2. the area around the module underneath the pcb should not contain any soldermask in order to maintain good rf grounding. 3. for proper and safe operation in the laboratory, the power-on sequencing should be followed: a. connect rf in and out b. connect the voltages and ground pins as shown in the circuit. c. apply the rf signal d. power down with the reverse sequence narrowband s-parameters +25 c, icq=250ma 26 27 28 29 30 31 1930 1950 1970 1990 frequency (mhz) s21 (db) -25 -20 -15 -10 -5 0 s11, s22 (db) s21 s11 s22 pae / icc vs. output power +25 c, 1960 mhz, icq=250ma 0 100 200 300 400 500 24 25 26 27 28 29 30 output power (dbm) icc (ma) 0% 10% 20% 30% 40% 50% pae (dbm) icc pae oip3 / imd vs. output power +25 c, 1960 mhz, icq=250ma -70 -60 -50 -40 -30 -20 22 24 26 28 30 output power / tone (dbm) imd (dbc) 30 35 40 45 50 55 oip3 (dbm) imd oip3 acpr vs. channel power +25 c, is-95a, 9 ch. fwd, 1fa, fo=1960 mhz, icq=250ma -70 -60 -50 -40 25 26 27 28 29 30 31 output channel power (dbm) acpr (dbc) 885 khz 1.25 mhz acpr vs. channel power +25 c, is-95a, 9 ch. fwd, 7fa, fo=1935 mhz, icq=250ma -70 -60 -50 -40 18 19 20 21 22 23 24 25 output channel power (dbm) acpr (dbc) 885 khz 1.25 mhz aclr vs. channel power +25 c, 3gpp w-cdma, test model 1+32 dpch, 1960 mhz, icq=250ma -70 -60 -50 -40 20 21 22 23 24 25 26 27 28 output channel power (dbm) aclr (dbc) 5 mhz 10 mhz dnp dnp dnp dnp dnp dnp dnp dnp 0 ? 730 ? 0 ? 10 f .01
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 4 of 5 july 2008 AP501 pcs-band 4w hbt amplifier module product information mttf calculation the mttf of the AP501 can be calculated by first determining how much power is being dissipated by the amplifier module. because the device?s intended application is to be a power amplifier pre- driver or final stage output amplifier, the output rf power of the amplifier will help lower the overall power dissipation. in addition, the amplifier can be biased with different quiescent currents, so the calculation of the mttf is custom to each application. the power dissipation of the device can be calculated with the following equation: p diss = v cc * i cc ? (output rf power ? input rf power), v cc = operating supply voltage = 12v i cc = operating current {the rf power is converted to watts} while the maximum recommended case temperature on the datasheet is listed at 85 ? c, it is suggested that customers maintain an mttf above 1 million hours. this would convert to a derating curve for maximum case temperature vs. power dissipation as shown in the plot below. maximum recommended case temp erature vs. power dissipation to maintain 1 million hours mttf 50 60 70 80 90 456789101112 power dissipation (watts) maximum case temperature (c) to calculate the mttf for the module, the junction temperature needs to be determined. this can be easily calculated with the module?s power dissipation, the thermal resistance value, and the case temperature of operation: t j = p diss * r th + t case t j = junction temperature p diss = power dissipation (calculated from above) r th = thermal resistance = 9 ? c/w t case = case temperature of module?s heat sink from a numerical standpoint, the mttf can be calculated using the arrhenius equation: mttf = a* e (ea/k/tj) a = pre-exponential factor = 6.087 x 10 -11 hours ea = activation energy = 1.39 ev k = boltzmann?s constant = 8.617 x 10 -5 ev/ ok t j = junction temperature (ok) = t j (oc) + 273 a graphical view of the mttf can be shown in the plot below. mttf vs. junction temperature 1.e+05 1.e+06 1.e+07 130 140 150 160 170 180 junction temperature (c) mttf (hours)
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 5 of 5 july 2008 AP501 pcs-band 4w hbt amplifier module product information outline drawing AP501 23 4 5 6 1 outline drawing for th e heatsink with the wj evaluation board product marking the device will be marked with an ?AP501? designato r with an alphanumeric lot code on the top surface of the p ackage noted as ?abcd? on the drawing. a manufacturing date will also be printed as ?xxyy?, where the ?xx? represents the week number from 1 ? 52. the product will be shipped in tubes in multiples of 15. esd / msl information esd rating: class 1c value: passes at 1,000 to < 2,000 volts test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iii value: passes 500 to < 1,000 volts test: charged device model (cdm) standard: jedec standard jesd22-c101
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